Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

Abstract: A positive electrode active material precursor includes Ni and Mn and secondary particles formed by the aggregation of a plurality of primary particles. The secondary particles have a ratio of a core area to a total area of the particles ranging from 28.7% to 34.1%, and a porosity ranging from 11.3% to 11.7%. Also provided is a method for preparing the positive electrode active material precursor. Additionally, a positive electrode active material including a reaction product of the positive electrode active material precursor and a lithium raw material is provided. Also provided is a method for preparing a positive electrode active material using the positive electrode active material precursor.

Abstract: The present disclosure relates to a ceramic susceptor. In a method of manufacturing a base body of a ceramic susceptor of the present disclosure, which includes a lower plate and an upper plate, which are each made of a metal-ceramic composite and bonded to each other, the method includes: sequentially laminating a first active metal layer, a first aluminum layer, and a brazing filler layer on a bonding surface of the upper plate; sequentially laminating a second active metal layer and a second aluminum layer on a bonding surface of the lower plate; and brazing-bonding the lower plate and the upper plate with the brazing filler layer.

Abstract: The present disclosure relates to a ceramic susceptor. In a method of manufacturing a base body of a ceramic susceptor of the present disclosure, which includes a lower plate and an upper plate, which are each made of a metal-ceramic composite and bonded to each other, the method includes: sequentially laminating a first active metal layer, a first aluminum layer, and a brazing filler layer on a bonding surface of the upper plate; sequentially laminating a second active metal layer and a second aluminum layer on a bonding surface of the lower plate; and brazing-bonding the lower plate and the upper plate with the brazing filler layer.

Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

Abstract: A glass article used as a cover glass of a flexible display device has values of indices consistent with results of a pen drop test and excellent impact resistance characteristics.

Abstract: A display device includes: a substrate; a polycrystalline silicon film on the substrate; and a first buffer film between the substrate and the polycrystalline silicon film and having one surface contacting the polycrystalline silicon film and another surface opposite to the one surface, wherein the one surface of the first buffer film has a first root mean square (RMS) roughness range, and the first RMS roughness range is 1.5 nm or less.

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

Abstract: Described is an anti-burn RF electrode cartridge for skin care and treatment and a handpiece for skin care and treatment comprising same, wherein an RF electrode body positioned at the bottom surface of a tip part is arranged to cover the entire bottom surface of the tip part and extend to the outer side surface of the tip part so as to wrap around the circumference of the outer side surface of the tip part, such that the rim end of the RF electrode, which is the part where RF energy is concentrated during a procedure, is positioned at the side surface of the tip, thereby preventing the accident of a spark being generated between the skin and the rim end of the RF electrode during a procedure and thus preventing the patient's skin from being burned during skin treatment using RF signals and greatly enhancing safety during a procedure.

Abstract: Systems and methods for detecting and quantifying images are disclosed. Systems and methods can include a metrology platform comprising: a customizable or user-configurable pipeline that is configured to enable a user to automatically and longitudinally obtain a plurality of metrology metrics from a process environment; and a graphical user interface (GUI) for implementing the pipeline, wherein the GUI comprises (1) a plurality of graphical functions configured to permit the user to interact with or to customize the pipeline and (2) one or more visual display areas configured to display the plurality of metrology metrics and a set of metrology images associated thereof.

Abstract: Systems and methods for utilizing a universal denoiser for improving Ebeam images are disclosed. A method can include obtaining a base set of Ebeam images from a plurality of domains within a process environment; and applying a universal denoiser to the base set of Ebeam images to generate an enhanced set of Ebeam images, wherein the enhanced set of Ebeam images has a higher quality than the base set of Ebeam images and accounts for a domain type of each of the plurality of domains.

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Abstract: According to the present invention, a golf swing practice machine is provided, the golf swing practice machine including: a club part (100) which enables a golfer to take a swing; a bottom part (200) on which a golf ball to be struck by a swing of the club part is placed; and an application (300) which may evaluate the state of the club part or select the type of a practice club when the golf ball placed on the bottom part (200) is struck, and thus, a swing state of the club part (100) may be analyzed.

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

Abstract: An electronic shift control apparatus includes a shift dial that is operated by a driver to select an R-range, an N-range, and a D-range, a P-range motor that is operated to select a P-range, and a haptic motor that generates a haptic signal. When a driver shifts into a specific shift range of a vehicle by operating the shift dial or the P-range button, the haptic signal is configured to be transmitted to the driver.

Abstract: A display device includes a display panel, a polarization member facing the display panel, a cover window including an inorganic material and facing the display panel with the polarization member therebetween, and a window bonding member which is between the cover window and the polarization member attaches the cover window to the polarization member. The window bonding member which attaches the cover window to the polarization member has a modulus of about of 1 MPa to about 10 MPa.

Abstract: Proposed are a separator tension controlling apparatus and method for stacking an electrode plate of a secondary battery. The apparatus includes a separator loading member on which a fixing plate is mounted such that a separator loading unit, a separator supplying member, and a separator moving member which are mounted on an upper surface of a table are capable of being mounted so that a negative electrode and a positive electrode of the secondary battery are capable of being stacked to cross each other by a separator, the separator supplying member mounted on a first side of the separator loading unit such that the separator is capable of being supplied to the separator loading unit, and the separator moving member mounted on an upper side of the separator loading member such that the separator supplied from the separator supplying member is capable of being supplied with uniform tension.

Abstract: A display device including: a display panel; a polarizing member overlapping the display panel; a cover window overlapping the polarizing member; and a window bonding member disposed between the polarizing member and the cover window, wherein a penetration depth of the window bonding member that is measured by an indentation tester is equal to or less than approximately 13 ?m.

Abstract: A heat transfer fin according to an aspect of the present invention includes a fin main body having a plate shape, and a plurality of through-holes defined to pass through the fin main body and spaced apart from each other in a first direction that is a predetermined direction.

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.