Abstract: An electronic device includes an integrated circuit chip with an insulating passivation layer. An opening in the passivation layer uncovers a first region of an electrical contact. An electrical connection pad is formed to fill the opening by covering the first region and extend in projection in such a way as to cover a second region situated on the passivation layer surrounding the opening. The periphery of at least one of the first and second regions has an elongate or oblong shape. Centers of the opening and the pad are aligned with each other.

Abstract: A method for fabricating electrical bonding pads on one face of a wafer includes the production of electrically conductive areas and electrical connection branches connecting these conductive areas. A layer of mask material is deposited and openings are produced in this mask layer which extend above said conductive areas and at least some of which extend at least partly beyond the peripheral edges of the underlying conductive areas. Blocks made of a solder material are produces in the openings by electrodeposition in a bath. The mask material is then removed along with the connection branches. The wafer is passed through or placed in an oven so as to shape, on the conductive areas, the blocks into substantially domed electrical bonding pads.

Abstract: A method for fabricating electrical bonding pads on the electrical contact areas of a wafer includes producing first blocks made of a solder material, producing second blocks made of a solder material on these first blocks, and passing the blocks through an oven so as to shape the blocks into approximately domed electrical bonding pads.

Abstract: A method for fabricating electrical bonding pads on the electrical contact areas of a wafer includes producing first blocks made of a solder material, producing second blocks made of a solder material on these first blocks, and passing the blocks through an oven so as to shape the blocks into approximately domed electrical bonding pads.

Abstract: A method for fabricating electrical bonding pads on one face of a wafer includes the production of electrically conductive areas and electrical connection branches connecting these conductive areas. A layer of mask material is deposited and openings are produced in this mask layer which extend above said conductive areas and at least some of which extend at least partly beyond the peripheral edges of the underlying conductive areas. Blocks made of a solder material are produces in the openings by electrodeposition in a bath. The mask material is then removed along with the connection branches. The wafer is passed through or placed in an oven so as to shape, on the conductive areas, the blocks into substantially domed electrical bonding pads.