Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: A method for measuring a semiconductor device is provided. A method for measuring a semiconductor device includes defining an interest area and an acceptable area in a chip area on a wafer; performing a first measurement of the chip area with a spectral imaging device to acquire spectrum data of the chip area; assuming the distribution of the spectrum data of a first pixel in the acceptable area is a normal distribution; calculating a distance from a central point on the normal distribution to second pixels in the interest area; selecting a position of a second pixel having a distance from the central point on the normal distribution greater than a predetermined range, among the second pixels, as a candidate position; and performing a second measurement of the candidate position.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: A method for measuring a semiconductor device is provided. A method for measuring a semiconductor device includes defining an interest area and an acceptable area in a chip area on a wafer; performing a first measurement of the chip area with a spectral imaging device to acquire spectrum data of the chip area; assuming the distribution of the spectrum data of a first pixel in the acceptable area is a normal distribution; calculating a distance from a central point on the normal distribution to second pixels in the interest area; selecting a position of a second pixel having a distance from the central point on the normal distribution greater than a predetermined range, among the second pixels, as a candidate position; and performing a second measurement of the candidate position.

Abstract: A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.

Abstract: An optical inspection apparatus includes a broadband light source, a monochromator, an image obtaining apparatus, and an analysis device. The monochromator is configured to convert light from the broadband light source into a plurality of monochromatic beams of different wavelengths and sequentially output the monochromatic beams, where each beam has a preset wavelength width and corresponds to one of a plurality of different wavelength regions. The image obtaining apparatus is configured to allow each monochromatic beam output from the monochromator to be incident to a top surface of an inspection target without using a beam splitter, allow light reflected by the inspection target to travel in a form of light of an infinite light source, and generate 2D images of the inspection target. The analysis device is configured to analyze the 2D images of the inspection target in the plurality of wavelength regions.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: A method for detecting an overlay error includes: forming a first overlay key including a plurality of spaced apart first target patterns having a first pitch on a first layer of a substrate; forming a second overlay key including a plurality of spaced apart second target patterns having a second pitch different than the first pitch on a second layer of the substrate below the first layer; irradiating the first layer and the second layer with incident light having a first wavelength; obtaining a phase pattern of light reflected from the first layer and the second layer; calculating a position of a peak point or a valley point of the phase pattern of the reflected light; and detecting an overlay error of the first layer and the second layer using the position of the peak point or the valley point of the phase pattern.

Abstract: A method of inspecting a substrate includes irradiating light onto a substrate that has experienced a first process, obtaining spectral data of the light reflected from the substrate, detecting a defect region of the substrate from the spectral data, and extracting a first defect site that occurred in or during the first process from the defect region. Extracting the first defect site includes establishing an effective area where the first process affects the substrate, and extracting a superimposed area that is overlapped with the effective area from the defect region. The superimposed area is defined as the first defect site.

Abstract: A method for detecting an overlay error includes: forming a first overlay key including a plurality of spaced apart first target patterns having a first pitch on a first layer of a substrate; forming a second overlay key including a plurality of spaced apart second target patterns having a second pitch different than the first pitch on a second layer of the substrate below the first layer; irradiating the first layer and the second layer with incident light having a first wavelength; obtaining a phase pattern of light reflected from the first layer and the second layer; calculating a position of a peak point or a valley point of the phase pattern of the reflected light; and detecting an overlay error of the first layer and the second layer using the position of the peak point or the valley point of the phase pattern.

Abstract: A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.

Abstract: An ellipsometer for detecting a surface including a light source irradiating a substrate with light, a polarization unit polarizing the light irradiated from the light source and analyzing the polarized light, a detector measuring a light quantity of the polarized light passing through the polarization unit, and a driver rotating the detector by an azimuth angle as the substrate rotates in a direction of the azimuth angle direction may be provided.

Abstract: An ellipsometer for detecting a surface including a light source irradiating a substrate with light, a polarization unit polarizing the light irradiated from the light source and analyzing the polarized light, a detector measuring a light quantity of the polarized light passing through the polarization unit, and a driver rotating the detector by an azimuth angle as the substrate rotates in a direction of the azimuth angle direction may be provided.