Abstract: A decoupling apparatus for a charge-coupled device line-addressable random-access memory includes a series of bipolar transistors, the bases of which are connected to output lines from the CCD LARAM. The emitters of the bipolar transistors, connected together, are connected to the source of a depletion-mode MOS reset transistor and to a comparator circuit.

Abstract: A device for introducing a known amount of charge to a line of charge storage elements in a charge-coupled device fabricated in a conductor-insulator-semiconductor system includes a buffer charge storage element fabricated adjacent a first charge storage element in the line of charge storage elements, the buffer charge storage element having its gate electrode controlled by a logic pulse whose level determines whether charge is to be introduced to the line of charge storage elements, and precharge means coupled to this buffer charge storage element for supplying a saturating charge to the buffer charge storage element.

Abstract: A line-addressable random-access memory (LARAM) comprises a plurality of lines of charge storage elements, means for introducing charge representing binary information to the beginning of particular ones of the plurality of lines of charge storage elements which are addressed, at least one data clock signal means for effecting the transfer of charge along those lines of the charge storage elements which are addressed, an address-selection matrix electrically coupled between the clock signal means and the lines to permit the addressed ones of the lines to be clocked, and charge-sensor means for receiving charge from the addressed lines and, in response thereto, generating a signal which represents the data signified by the charge and for recirculating a refreshed representation of the charge to the means for introducing charge.

Abstract: The charge generated in semiconductor material by incident radiation is transferred to an adjacent region of the semiconductor material by lowering the potential on the adjacent region of semiconductor material relative to the potential in the region where the charge was initially generated. Charge is prevented from flowing back to the region where it was generated by means of a potential barrier formed between the generation region and the adjacent region by a region of semiconductor material highly doped relative to the substrate between said adjacent region and the region in which the charge is generated.

Abstract: A reference voltage generator for generating reference voltages for use in charge-coupled devices includes a means for generating a charge whose magnitude lies between a first charge representing a number in an n-dimensional logic system and a second charge representing another number in an n-dimensional logic system, comparison means electrically coupled to the means for generating a charge, the comparison means generating a voltage representative of the charge and comparing the voltage with an instantaneous reference voltage to provide an indication of the relative magnitudes of the voltage and the instantaneous reference voltage, and feedback means electrically coupled to the comparison means for producing an instantaneous reference voltage and including a means for providing an incremental adjustment to the instantaneous reference voltage in response to the indication of relative magnitude, the incremental adjustment serving to bring the value of the instantaneous reference voltage closer to the value for

Abstract: A self-aligned charge coupled device comprises a semiconductor substrate having implanted barrier regions, an insulation layer disposed over the substrate, a first layer of closely spaced electrodes, a second layer of closely spaced electrodes interlaced between electrodes of the first layer and separated by insulation, and a conductor deposited between the first and second electrodes so as to electrically connect portions of the first electrodes to portions of the second electrodes.