Patents by Inventor Gilbert Lai

Gilbert Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6204175
    Abstract: A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.
    Type: Grant
    Filed: January 5, 1999
    Date of Patent: March 20, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Gilbert Lai, Gurtej S. Sandhu, Ravi Iyer, Brian A. Vaartstra
  • Patent number: 5856236
    Abstract: A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.
    Type: Grant
    Filed: June 14, 1996
    Date of Patent: January 5, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Gilbert Lai, Gurtej S. Sandhu, Ravi Iyer, Brian A. Vaartstra