Patents by Inventor Gilbert Lai

Gilbert Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7737024
    Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: June 15, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Wing-Cheong Gilbert Lai, Gurtei Singh Sandhu
  • Patent number: 7732327
    Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: June 8, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Sang-Hyeob Lee, Avgerinos V. Gelatos, Kai Wu, Amit Khandelwal, Ross Marshall, Emily Renuart, Wing-Cheong Gilbert Lai, Jing Lin
  • Patent number: 7560816
    Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
    Type: Grant
    Filed: August 31, 2007
    Date of Patent: July 14, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
  • Publication number: 20090081866
    Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.
    Type: Application
    Filed: September 26, 2008
    Publication date: March 26, 2009
    Inventors: SANG-HYEOB LEE, Avgerinos V. Gelatos, Kai Wu, Amit Khandelwal, Ross Marshall, Emily Renuart, Wing-Cheong Gilbert Lai, Jing Lin
  • Patent number: 7276795
    Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
    Type: Grant
    Filed: July 27, 2004
    Date of Patent: October 2, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
  • Patent number: 7217661
    Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
    Type: Grant
    Filed: September 20, 2005
    Date of Patent: May 15, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
  • Patent number: 6946393
    Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
    Type: Grant
    Filed: February 13, 2001
    Date of Patent: September 20, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
  • Publication number: 20050006774
    Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
    Type: Application
    Filed: July 27, 2004
    Publication date: January 13, 2005
    Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
  • Patent number: 6774487
    Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
    Type: Grant
    Filed: February 13, 2001
    Date of Patent: August 10, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
  • Publication number: 20010009807
    Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
    Type: Application
    Filed: February 13, 2001
    Publication date: July 26, 2001
    Applicant: Micron Technology, Inc.
    Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
  • Publication number: 20010005621
    Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
    Type: Application
    Filed: February 13, 2001
    Publication date: June 28, 2001
    Applicant: Micron Technology, Inc.
    Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
  • Patent number: 6204175
    Abstract: A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.
    Type: Grant
    Filed: January 5, 1999
    Date of Patent: March 20, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Gilbert Lai, Gurtej S. Sandhu, Ravi Iyer, Brian A. Vaartstra
  • Patent number: 6187673
    Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
    Type: Grant
    Filed: September 3, 1998
    Date of Patent: February 13, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
  • Patent number: 5866205
    Abstract: A method is provided for forming films comprising TiN or Ti--Si--N employing the techniques of chemical vapor deposition to decompose a vapor comprising a compound of the formula Ti?N(R.sup.1)(R.sup.2)!.sub.x ?(R.sup.3)N--C(R.sup.4)(R.sup.5)--C(R.sup.6)(R.sup.7)--N(R.sup.8)(R.sup.9) !.sub.y wherein each of R.sup.1, R.sup.2, R.sup.3, R.sup.8 and R.sup.9 are (C.sub.1 -C.sub.4) alkyl, each of R.sup.4, R.sup.5, R.sup.6, and R.sup.7 are each H or (C.sub.1 -C.sub.4) alkyl and x and y are 1-3; so as to deposit a film comprising titanium on the surface of a substrate.
    Type: Grant
    Filed: December 13, 1996
    Date of Patent: February 2, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Brian A. Vaartstra, Wing-Cheong Gilbert Lai
  • Patent number: 5856236
    Abstract: A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.
    Type: Grant
    Filed: June 14, 1996
    Date of Patent: January 5, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Gilbert Lai, Gurtej S. Sandhu, Ravi Iyer, Brian A. Vaartstra