Patents by Inventor Gilbert Lai
Gilbert Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7737024Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.Type: GrantFiled: April 27, 2006Date of Patent: June 15, 2010Assignee: Micron Technology, Inc.Inventors: Wing-Cheong Gilbert Lai, Gurtei Singh Sandhu
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Patent number: 7732327Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.Type: GrantFiled: September 26, 2008Date of Patent: June 8, 2010Assignee: Applied Materials, Inc.Inventors: Sang-Hyeob Lee, Avgerinos V. Gelatos, Kai Wu, Amit Khandelwal, Ross Marshall, Emily Renuart, Wing-Cheong Gilbert Lai, Jing Lin
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Patent number: 7560816Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.Type: GrantFiled: August 31, 2007Date of Patent: July 14, 2009Assignee: Micron Technology, Inc.Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
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Publication number: 20090081866Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.Type: ApplicationFiled: September 26, 2008Publication date: March 26, 2009Inventors: SANG-HYEOB LEE, Avgerinos V. Gelatos, Kai Wu, Amit Khandelwal, Ross Marshall, Emily Renuart, Wing-Cheong Gilbert Lai, Jing Lin
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Patent number: 7276795Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.Type: GrantFiled: July 27, 2004Date of Patent: October 2, 2007Assignee: Micron Technology, Inc.Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
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Patent number: 7217661Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.Type: GrantFiled: September 20, 2005Date of Patent: May 15, 2007Assignee: Micron Technology, Inc.Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
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Patent number: 6946393Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.Type: GrantFiled: February 13, 2001Date of Patent: September 20, 2005Assignee: Micron Technology, Inc.Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
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Publication number: 20050006774Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.Type: ApplicationFiled: July 27, 2004Publication date: January 13, 2005Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
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Patent number: 6774487Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.Type: GrantFiled: February 13, 2001Date of Patent: August 10, 2004Assignee: Micron Technology, Inc.Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
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Publication number: 20010009807Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.Type: ApplicationFiled: February 13, 2001Publication date: July 26, 2001Applicant: Micron Technology, Inc.Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
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Publication number: 20010005621Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.Type: ApplicationFiled: February 13, 2001Publication date: June 28, 2001Applicant: Micron Technology, Inc.Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
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Patent number: 6204175Abstract: A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.Type: GrantFiled: January 5, 1999Date of Patent: March 20, 2001Assignee: Micron Technology, Inc.Inventors: Gilbert Lai, Gurtej S. Sandhu, Ravi Iyer, Brian A. Vaartstra
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Patent number: 6187673Abstract: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.Type: GrantFiled: September 3, 1998Date of Patent: February 13, 2001Assignee: Micron Technology, Inc.Inventors: Wing-Cheong Gilbert Lai, Gurtej Singh Sandhu
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Patent number: 5866205Abstract: A method is provided for forming films comprising TiN or Ti--Si--N employing the techniques of chemical vapor deposition to decompose a vapor comprising a compound of the formula Ti?N(R.sup.1)(R.sup.2)!.sub.x ?(R.sup.3)N--C(R.sup.4)(R.sup.5)--C(R.sup.6)(R.sup.7)--N(R.sup.8)(R.sup.9) !.sub.y wherein each of R.sup.1, R.sup.2, R.sup.3, R.sup.8 and R.sup.9 are (C.sub.1 -C.sub.4) alkyl, each of R.sup.4, R.sup.5, R.sup.6, and R.sup.7 are each H or (C.sub.1 -C.sub.4) alkyl and x and y are 1-3; so as to deposit a film comprising titanium on the surface of a substrate.Type: GrantFiled: December 13, 1996Date of Patent: February 2, 1999Assignee: Micron Technology, Inc.Inventors: Brian A. Vaartstra, Wing-Cheong Gilbert Lai
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Patent number: 5856236Abstract: A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.Type: GrantFiled: June 14, 1996Date of Patent: January 5, 1999Assignee: Micron Technology, Inc.Inventors: Gilbert Lai, Gurtej S. Sandhu, Ravi Iyer, Brian A. Vaartstra