Patents by Inventor Gilbert SASSINE

Gilbert SASSINE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMORY SELECTOR
    Publication number: 20220231225
    Abstract: A selector for a memory cell, intended to change from a resistive state to a conductive state so as to respectively prohibit or authorize access to the memory cell, characterized in that it is made of an alloy consisting of germanium, selenium, arsenic and tellurium.
    Type: Application
    Filed: May 4, 2020
    Publication date: July 21, 2022
    Applicant: Commissariat à I'Énergie Atomique et aux Énergies Alternatives
    Inventors: Anthonin Verdy, Gilbert Sassine, Gabriel Molas, Gabriele Navarro
  • Method for programming a resistive random access memory
    Patent number: 10803940
    Abstract: A method for programming a resistive random access memory including a matrix of memory cells. This method includes a programming procedure that includes applying a programming voltage ramp to the memory cells of a part at least of the matrix, the programming voltage ramp starting at a first non-zero voltage value, called start voltage, and ending at a second voltage value, called stop voltage, greater in absolute value than the first voltage value. The stop voltage is determined such that each memory cell of said at least one part of the matrix has a first probability between 1/(10N) and 1/N of having a programming voltage greater in absolute value than the stop voltage (Vstop), N being the number of memory cells in the at least one part of the matrix.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: October 13, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Gilbert Sassine, Gabriel Molas
  • METHOD FOR PROGRAMMING A RESISTIVE RANDOM ACCESS MEMORY
    Publication number: 20200005867
    Abstract: A method for programming a resistive random access memory including a matrix of memory cells. This method includes a programming procedure that includes applying a programming voltage ramp to the memory cells of a part at least of the matrix, the programming voltage ramp starting at a first non-zero voltage value, called start voltage, and ending at a second voltage value, called stop voltage, greater in absolute value than the first voltage value. The stop voltage is determined such that each memory cell of said at least one part of the matrix has a first probability between 1/(10N) and 1/N of having a programming voltage greater in absolute value than the stop voltage (Vstop), N being the number of memory cells in the at least one part of the matrix.
    Type: Application
    Filed: May 10, 2019
    Publication date: January 2, 2020
    Inventors: Gilbert SASSINE, Gabriel MOLAS