Abstract: Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.

Abstract: A metal-insulator phase transition (MIT) flip-flop employs a selected one of a pair of bi-stable operating states to represent a logic state of the MIT flip-flop. The MIT flip-flop includes an MIT device having a current-controlled negative differential resistance (CC-NDR) to provide the pair of bi-stable operating states. A bi-stable operating state of the pair is capable of being selected by a programing voltage. Once the bi-stable operating state is selected, the bi-stable operating state is capable of being maintained by a bias voltage applied to the MIT device.

Abstract: The present disclosure provides a memory cell that includes a resistive memory element disposed between a first conductor and a second conductor, the first conductor and the second conductor configured to activate the resistive memory element. The memory cell also includes a backward diode disposed in series with the memory element between the memory element and either the first conductor or the second conductor.

Abstract: A printhead assembly for a printing device is provided that includes a printhead comprising non-volatile memory elements. The memory elements include memristive elements. Each memristive element includes an active region disposed between two electrodes. The active region includes a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer in electrical contact with the switching layer, the conductive layer being formed of a dopant source material that includes the species of dopants that are capable of drifting into the switching layer under an applied potential.

Abstract: A metal-insulator phase transition (MIT) flip-flop employs a selected one of a pair of bi-stable operating states to represent a logic state of the MIT flip-flop. The MIT flip-flop includes an MIT device having a current-controlled negative differential resistance (CC-NDR) to provide the pair of bi-stable operating states. A bi-stable operating state of the pair is capable of being selected by a programing voltage. Once the bi-stable operating state is selected, the bi-stable operating state is capable of being maintained by a bias voltage applied to the MIT device.

Abstract: The present disclosure provides a memory cell that includes a resistive memory element disposed between a first conductor and a second conductor, the first conductor and the second conductor configured to activate the resistive memory element. The memory cell also includes a backward diode disposed in series with the memory element between the memory element and either the first conductor or the second conductor.

Abstract: Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.

Abstract: A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M2 disposed above the NDR material, a second layer of NDR material disposed above layer M2, and a conductive layer disposed above the second NDR layer. Layer M2 can include a conductive material interspersed with regions of a dielectric material or a layer of the dielectric material and regions of the conductive material disposed above and below the dielectric material.

Abstract: A printhead assembly for a printing device is provided that includes a printhead comprising non-volatile memory elements. The memory elements include memristive elements. Each memristive element includes an active region disposed between two electrodes. The active region includes a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer in electrical contact with the switching layer, the conductive layer being formed of a dopant source material that includes the species of dopants that are capable of drifting into the switching layer under an applied potential.

Abstract: A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M2 disposed above the NDR material, a second layer of NDR material disposed above layer M2, and a conductive layer disposed above the second NDR layer. Layer M2 can include a conductive material interspersed with regions of a dielectric material or a layer of the dielectric material and regions of the conductive material disposed above and below the dielectric material.