Patents by Inventor Gilberto Ribeiro
Gilberto Ribeiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200367329Abstract: A MW signal is delivered to a waveguide with a coaxial concentrator. At least one of an amplitude and a phase of a reflected signal from the coaxial concentrator is monitored to determine material characteristics of a build material fusion process.Type: ApplicationFiled: January 31, 2018Publication date: November 19, 2020Inventors: David A Champion, Raymond Adamic, James Abbott, Gilberto Ribeiro, Cassio Goncalves, Diego Tami, Wellington Avenlino, Douglas Pederson
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Patent number: 9588888Abstract: A memory device and method for altering a performance characteristic of a memory array to increase a rate at which the memory device writes data in response to the memory device experiencing a demand for bandwidth above a threshold. The memory device may include a memory controller and a memory array, which may include memristive memory elements. To alter a performance characteristic, for example, the memristive memory elements may be written at sub-full resistive states which have a smaller difference between high and low resistive states, and/or the memory controller may disable a subset of memory elements and/or memory cells along a bit line and/or word line of the memory array. The subset of memory elements may be re-enable in response to the demand for bandwidth falling below the threshold, and data may be moved and/or rearranged within the memory device when the subset of memory elements is re-enabled. Altering the performance characteristic may increase a rate at which the memory device writes data.Type: GrantFiled: July 30, 2010Date of Patent: March 7, 2017Assignee: Hewlett Packard Enterprise Development LPInventors: Janice H. Nickel, Gilberto Ribeiro
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Patent number: 9196354Abstract: Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.Type: GrantFiled: February 9, 2010Date of Patent: November 24, 2015Assignee: Hewlett-Packard Development Company, L.P.Inventors: John Paul Strachan, Julien Borghetti, Matthew D. Pickett, Gilberto Ribeiro, Jianhua Yang
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Patent number: 9040948Abstract: A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow between the first electrode and the second electrode to a central portion of the active region; and an interlayer dielectric layer formed of a dielectric material and disposed between the first and second electrodes outside the active region. A nanoscale crossbar array and method of forming the nanoscale switching device are also disclosed.Type: GrantFiled: September 16, 2010Date of Patent: May 26, 2015Assignee: Hewlett-Packard Development Company, L.P.Inventors: Gilberto Ribeiro, Janice H Nickel, Jianhua Yang
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Patent number: 9024285Abstract: A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.Type: GrantFiled: April 19, 2010Date of Patent: May 5, 2015Assignee: Hewlett-Packard Development Company, L.P.Inventors: Jianhua Yang, Gilberto Ribeiro, R. Stanley Williams
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Patent number: 8912520Abstract: A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region under an electric field to change a resistive state of the device. The switching material further carries immobile ionic dopants for inhibiting clustering of the mobile ionic dopants caused by switching cycles of the device. The immobile ionic dopants have a charge opposite in polarity to the charge of the mobile ionic dopants, and are less mobile under the electric field than the mobile ion dopants.Type: GrantFiled: July 21, 2010Date of Patent: December 16, 2014Assignee: Hewlett-Packard Development Company, L.P.Inventors: Jianhua Yang, Matthew Pickett, Gilberto Ribeiro
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Patent number: 8891284Abstract: A memristor based on mixed-metal-valence compounds comprises: a first electrode; a second electrode; a layer of a mixed-metal-valence phase in physical contact with at least one layer of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field. One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer of a fully oxidized phase and the other is in electrical contact with the layer (or other layer) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode and an ON-switched diode are also provided. A method of operating the memristor is further provided.Type: GrantFiled: September 4, 2009Date of Patent: November 18, 2014Assignee: Hewlett-Packard Development Company, L.P.Inventors: R. Stanley Williams, Jianhua Yang, Matthew Pickett, Gilberto Ribeiro, John Paul Strachan
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Patent number: 8737113Abstract: Methods and means related to memory resistors are provided. A memristor includes two multi-layer electrodes and an active material layer. One multi-layer electrode forms an Ohmic contact region with the active material layer. The other multi-layer electrode forms a Schottky barrier layer with the active material layer. The active material layer is subject to oxygen vacancy profile reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.Type: GrantFiled: February 8, 2010Date of Patent: May 27, 2014Assignee: Hewlett-Packard Development Company, L.P.Inventors: Jianhua Yang, Wei Wu, Gilberto Ribeiro
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Patent number: 8519372Abstract: A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.Type: GrantFiled: July 30, 2009Date of Patent: August 27, 2013Assignee: Hewlett-Packard Development Company, L.P.Inventors: Jianhua Yang, Shih-Yuan Wang, R. Stanley Williams, Alexandre Bratkovski, Gilberto Ribeiro
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Patent number: 8493138Abstract: A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode.Type: GrantFiled: August 26, 2009Date of Patent: July 23, 2013Assignee: Hewlett-Packard Development Company, L.P.Inventors: John Paul Strachan, Gilberto Ribeiro, Dmitri Strukov
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Publication number: 20130168629Abstract: A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow between the first electrode and the second electrode to a central portion of the active region; and an interlayer dielectric layer formed of a dielectric material and disposed between the first and second electrodes outside the active region. A nanoscale crossbar array and method of forming the nanoscale switching device are also disclosed.Type: ApplicationFiled: September 16, 2010Publication date: July 4, 2013Inventors: Gilberto Ribeiro, Janice H. Nickel, Jianhua Yang
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Publication number: 20130112934Abstract: A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region under an electric field to change a resistive state of the device. The switching material further carries immobile ionic dopants for inhibiting clustering of the mobile ionic dopants caused by switching cycles of the device. The immobile ionic dopants have a charge opposite in polarity to the charge of the mobile ionic dopants, and are less mobile under the electric field than the mobile ion dopants.Type: ApplicationFiled: July 21, 2010Publication date: May 9, 2013Inventors: Jianhua Yang, Matthew Pickett, Gilberto Ribeiro
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Patent number: 8415652Abstract: A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.Type: GrantFiled: June 21, 2010Date of Patent: April 9, 2013Assignee: Hewlett-Packard Development Company, L.P.Inventors: Jianhua Yang, Gilberto Ribeiro, R. Stanley Williams
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Publication number: 20130026440Abstract: A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.Type: ApplicationFiled: April 19, 2010Publication date: January 31, 2013Inventors: Jianhua Yang, Gilberto Ribeiro, Stanley William
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Publication number: 20130009128Abstract: A nanoscale switching device has an active region containing a switching material. The switching device has a first electrode and a second electrode with nanoscale widths, and the active region is disposed between the first and second electrodes. A protective cladding layer surrounds the active region. The protective cladding layer is formed of a cladding material unreactive to the switching material. An interlayer isolation layer formed of a dielectric material is disposed between the first and second electrodes and outside the protective cladding layer.Type: ApplicationFiled: March 31, 2010Publication date: January 10, 2013Inventors: Gilberto Ribeiro, Janice H Nickel, Jianhua YA Yang
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Publication number: 20120223286Abstract: A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.Type: ApplicationFiled: July 30, 2009Publication date: September 6, 2012Inventors: Jianhua Yang, Shih-Yuan Wang, R. Stanley Williams, Alexandre Bratkovski, Gilberto Ribeiro
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Publication number: 20120127780Abstract: Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.Type: ApplicationFiled: February 9, 2010Publication date: May 24, 2012Inventors: John Paul Strachan, Julien Borghetti, Matthew D. Pickett, Gilberto Ribeiro, Jianhua Yang
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Publication number: 20120120714Abstract: Methods and means related to memory resistors are provided. A memristor includes two multi-layer electrodes and an active material layer. One multi-layer electrode forms an Ohmic contact region with the active material layer. The other multi-layer electrode forms a Schottky barrier layer with the active material layer. The active material layer is subject to oxygen vacancy profile reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.Type: ApplicationFiled: February 8, 2010Publication date: May 17, 2012Inventors: Jianhua Yang, Wei Wu, Gilberto Ribeiro
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Publication number: 20120113706Abstract: A memristor (100, 100?, 100?) based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other.Type: ApplicationFiled: September 4, 2009Publication date: May 10, 2012Inventors: R. Stanley Williams, Jinhua ` Yang, Matthew Pickett, Gilberto Ribeiro, John Paul Strachan
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Publication number: 20120030434Abstract: A memory device includes a memory array and a memory controller for altering a performance characteristic of the memory array to increase a rate at which the memory device writes data in response to the memory device experiencing a demand for bandwidth above a threshold. A method for adjusting the performance characteristics of a memory device includes altering a performance characteristic of the memory device in response to the memory device experiencing a demand for bandwidth above a threshold. Altering the performance characteristic increases a rate at which the memory device writes data.Type: ApplicationFiled: July 30, 2010Publication date: February 2, 2012Inventors: Janice H. Nickel, Gilberto Ribeiro