Abstract: A material recovery system for an optical component includes a reservoir containing gas and configured to supply a gas flow containing the gas. The material recovery system also includes an ion beam generator disposed on the reservoir and configured to receive the gas flow and to ionize the gas in the gas flow to generate an ion beam. The ion beam is configured to be directed to the optical component to remove at least a portion of a F-containing optical material degraded by exposure to VUV radiation, DUV radiation, and/or photo-contamination.

Abstract: Systems for cleaning optical surfaces of overlay inspection systems are disclosed. In particular, systems for optical-path coupling of light for in-situ photochemical cleaning in projection imaging systems are disclosed. A system for cleaning optical surfaces of overlay inspection systems includes a first illumination source, a detector, a set of illumination optics, and a set of imaging optics. In some embodiments, the system may include at least one of a second illumination source and a third illumination source, each of which may be configured to cause or aid the removal of contaminants from one or more optical surfaces of the system.

Abstract: Systems for cleaning optical surfaces of overlay inspection systems are disclosed. In particular, systems for optical-path coupling of light for in-situ photochemical cleaning in projection imaging systems are disclosed. A system for cleaning optical surfaces of overlay inspection systems includes a first illumination source, a detector, a set of illumination optics, and a set of imaging optics. In some embodiments, the system may include at least one of a second illumination source and a third illumination source, each of which may be configured to cause or aid the removal of contaminants from one or more optical surfaces of the system.

Abstract: A method for ion-assisted deposition of optical coatings. The method may include performing one or more pre-deposition processes. The method may include performing evaporation using an evaporation assembly of an ion-assisted deposition system during ion-assisted deposition using a low energy ion beam source of the ion-assisted deposition system. The method may further include performing sputtering using a sputtering assembly of an ion-assisted deposition system. The evaporation assembly may include an evaporating target and an evaporator configured to directly evaporate target material from the evaporating target onto a surface of the one or more samples. The sputtering assembly may include a sputtering target and a sputtering high energy ion source configured to sputter target material from the sputtering target onto a surface of the one or more samples. The method may include performing one or more post-deposition treatment processes.

Abstract: An optical system includes a bulk material including a fluorine (F)-containing optical material. The bulk material is exposed to an environment at a pressure ranging from atmospheric to vacuum when the bulk material is under extreme ultra-violet (EUV), vacuum ultra-violet (VUV), deep ultra-violet (DUV) and/or UV radiation. The environment includes at least one type of gas or vapor. The at least one type of gas or vapor includes polar molecules.

Abstract: A system for mitigating damage to optical elements caused by vacuum ultraviolet (VUV) light exposure is disclosed. The system includes a light source configured to generate VUV and a chamber containing one or more gaseous fluorine-based compounds of a selected partial pressure. The system includes one or more optical elements. The one or more optical elements are located within the chamber and are exposed to the one or more gaseous fluorine-based compounds. The VUV light generated by the light source is of sufficient energy to dissociate the fluorine-based compound within the chamber into a primary product.

Abstract: An optical component includes an optical material which is a fluorine (F)-containing optical material doped with an F-containing species different from the F-containing optical material. A coating system for depositing the optical material onto a substrate or a bulk material of an optical component is an electron beam evaporation coating system, an ion assisted deposition coating system, or an ion beam sputtering coating system.

Abstract: A material recovery system for an optical component includes a reservoir containing gas and configured to supply a gas flow containing the gas. The material recovery system also includes an ion beam generator disposed on the reservoir and configured to receive the gas flow and to ionize the gas in the gas flow to generate an ion beam. The ion beam is configured to be directed to the optical component to remove at least a portion of a F-containing optical material degraded by exposure to VUV radiation, DUV radiation, and/or photo-contamination.

Abstract: A system for mitigating damage to optical elements caused by vacuum ultraviolet (VUV) light exposure is disclosed. The system includes a light source configured to generate VUV and a chamber containing one or more gaseous fluorine-based compounds of a selected partial pressure. The system includes one or more optical elements. The one or more optical elements are located within the chamber and are exposed to the one or more gaseous fluorine-based compounds. The VUV light generated by the light source is of sufficient energy to dissociate the fluorine-based compound within the chamber into a primary product.

Abstract: A system includes optics for ultraviolet light or electrons. The optics are situated in a chamber and include a surface to control a path of photons or electrons. The system also includes a lubricated component that is distinct from the surface and is situated in the chamber. The lubricated component is lubricated with a lubricant that includes an ionic liquid having a cation and an anion, wherein at least one of the cation or the anion is organic.

Abstract: The present invention provides a local clean microenvironment near optical surfaces of an extreme ultraviolet (EUV) optical assembly maintained in a vacuum process chamber and configured for EUV lithography, metrology, or inspection. The system includes one or more EUV optical assemblies including at least one optical element with an optical surface, a supply of cleaning gas stored remotely from the one or more optical assemblies and a gas delivery unit comprising: a plenum chamber, one or more gas delivery lines connecting the supply of gas to the plenum chamber, one or more delivery nozzles configured to direct cleaning gas from the plenum chamber to a portion of the EUV assembly, and one or more collection nozzles for removing gas from the EUV optical assembly and the vacuum process chamber.

Abstract: A high-brightness electron beam source is disclosed. The electron beam source may include a broadband illumination source configured to generate broadband illumination. A tunable spectral filter may be configured to filter the broadband illumination to provide filtered illumination having an excitation spectrum. The electron beam source may further include a photocathode configured to emit one or more electron beams in response to the filtered illumination, wherein emission from the photocathode is adjustable based on the excitation spectrum of the filtered illumination from the tunable spectral filter.

Abstract: An imaging system utilizing atomic atoms is provided. The system may include a neutral atom source configured to generate a beam of neutral atoms. The system may also include an ionizer configured to collect neutral atoms scattered from the surface of a sample. The ionizer may also be configured to ionize the collected neutral atoms. The system may also include a selector configured to receive ions from the ionizer and selectively filter received ions. The system may also include one or more optical elements configured to direct selected ions to a detector. The detector may be configured to generate one or more images of the surface of the sample based on the received ions.

Abstract: An electron extractor of an electron source capable of absorbing contaminant materials from a cavity proximate to the extractor is disclosed. The electron extractor includes a body. The body of the electron extractor is formed from one or more non-evaporable getter materials. The one or more non-evaporable getter materials absorb one or more contaminants contained within a region proximate to the body of the electron extractor. The body of the electron extractor is further configured to extract electrons from one or more emitters posited proximate to the body of the electron extractor.

Abstract: An imaging system utilizing atomic atoms is provided. The system may include a neutral atom source configured to generate a beam of neutral atoms. The system may also include an ionizer configured to collect neutral atoms scattered from the surface of a sample. The ionizer may also be configured to ionize the collected neutral atoms. The system may also include a selector configured to receive ions from the ionizer and selectively filter received ions. The system may also include one or more optical elements configured to direct selected ions to a detector. The detector may be configured to generate one or more images of the surface of the sample based on the received ions.

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer and a doped layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

Abstract: A high-brightness electron beam source is disclosed. The electron beam source may include a broadband illumination source configured to generate broadband illumination. A tunable spectral filter may be configured to filter the broadband illumination to provide filtered illumination having an excitation spectrum. The electron beam source may further include a photocathode configured to emit one or more electron beams in response to the filtered illumination, wherein emission from the photocathode is adjustable based on the excitation spectrum of the filtered illumination from the tunable spectral filter.

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer and a doped layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

Abstract: The present invention for imaging sensor rejuvenation may include a rejuvenation illumination system configured to selectably illuminate a portion of an imaging sensor of an imaging system with illumination suitable for at least partially rejuvenating the imaging sensor degraded by exposure to at least one of extreme ultraviolet light or deep ultraviolet light; and a controller communicatively coupled to the rejuvenation illumination system and configured to direct the rejuvenation illumination system to illuminate the imaging sensor for one or more illumination cycles during a non-imaging state of the imaging sensor.