Abstract: The invention relates to photosensitive sensors, especially electronic image sensors made using CMOS integrated circuit technology.

Abstract: A method of detecting electromagnetic radiation imparted onto a matrix of photosensitive photomos networks in which pixels of each photomos network are simultaneously exposed to electromagnetic radiation source for a predetermined period of time. Thereafter, transfer signals are applied to each photomos pixel and accumulated charges corresponding to the strength of the radiation imparted onto the pixels are transferred in a columnwise fashion to the end of each column of the photomos networks. The charges are summed at the end of the columns and placed in a reading register. The charges in the reading register of each photomos network are summed and a signal is output corresponding to the strength of the electromagnetic radiation imparted onto the photomos network.

Abstract: A method of detecting electromagnetic radiation imparted onto a matrix of photosensitive photomos networks in which pixels of each photomos network are simultaneously exposed to electromagnetic radiation source for a predetermined period of time. Thereafter, transfer signals are applied to each photomos pixel and accumulated charges corresponding to the strength of the radiation imparted onto the pixels are transferred in a columnwise fashion to the end of each column of the photomos networks. The charges are summed at the end of the columns and placed in a reading register. The charges in the reading register of each photomos network are summed and a signal is output corresponding to the strength of the electromagnetic radiation imparted onto the photomos network.

Abstract: Disclosed is a charge-transfer or charge-coupled (CCD) type device, aimed at increasing the charge storage capacity. The disclosed photosensitive device includes a plurality of photosensitive cells. Each photosensitive cell includes an elementary photosensitive zone beneath which there is formed a potential well. According to one characteristic, the potential well has a surface area greater than the surface area of the elementary photosensitive zone. The disclosure can be applied to charge-couped devices that include a non-photosensitive zone between the pixels.

Abstract: The invention pertains to a charge transfer shift register provided with a device for voltage sensing using a floating-potential diode. Towards that end of the register which is located on the floating-potential diode side, the width of the charge transfer channel diminishes gradually and symmetrically with respect to the longitudinal axis of the register, and the electrodes have a shape which is all the more similar to that of a ring sector as they are close to the floating-potential diode. Thus, the path followed by the charges which leave it up to the floating electrode are made substantially uniform for each of these electrodes, whether the charges leave the electrode near the edges of the channel or near the longitudinal axis of the register.

Abstract: An antidazzle image sensor having an assembly of photosensitive elements in which charges are released by light and antidazzle drains coupled respectively to each one of the photosensitive elements for draining away excess charges released during a phase in which charges are accumulated in the photosensitive elements. At least one charge transfer reading register, which is coupled to each photosensitive element assembly, is used so that the charges released in each photosensitive element assembly are transferred to the charge transfer reading register and subsequently shifted by this register to a series output. An auxiliary register is used in order to collect excess charges which are released by light during the time when charges are being transferred from the photosensitive elements to the reading register. The auxiliary register also functions to shift these transfer charges towards a drain.

Abstract: The present invention provides a device for reading a matrix of photosensitive detectors by line transfer with feedback, wherein means provide feedback of a part of the video signal from a line of the matrix which is read to a stage for series injection of a drive charge at the input of a register providing reading successively of each line of detectors of the matrix. Thus the value of the drive charge is modulated which is intended to be added to the video signal of the line of the matrix which will then be read, such modulation being directly proportional to the video signal of the line which is read and dependent on the transfer inefficiency of the device.

Abstract: This device comprises a photosensitive strip, of which one photosensitive element out of two is shifted in the direction of analysis of the image, the photosensitive elements being disposed according to a first and second row. This device comprises two charge transfer shift registers. Each stage of the registers comprises two inputs of the charges and inputs of the registers are connected alternately to the first and to the second row of photosensitive elements. Are transferred successively in each register the charges due to each line of the analyzed image that were accumulated in the first row of elements for a given integration duration then the charges due to this line and accumulated in the second row of elements for the same integration duration.