Patents by Inventor Gilles CUNGE

Gilles CUNGE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the exfoliation of graphene
    Patent number: 11554959
    Abstract: A process for exfoliating graphene, includes a step of irradiating a first substrate comprising graphene on its surface, with a helium or hydrogen plasma containing ions of energy comprised between 10 and 60 eV. A process for fabricating graphene on the surface of a second substrate, comprising the exfoliating process.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: January 17, 2023
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE GRENOBLES ALPES
    Inventors: Gilles Cunge, Alexandra Davydova, Emilie Despiau-Pujo, Djawhar Ferrah, Olivier Renault
  • METHOD FOR THE EXFOLIATION OF GRAPHENE
    Publication number: 20190276317
    Abstract: A process for exfoliating graphene, includes a step of irradiating a first substrate comprising graphene on its surface, with a helium or hydrogen plasma containing ions of energy comprised between 10 and 60 eV. A process for fabricating graphene on the surface of a second substrate, comprising the exfoliating process.
    Type: Application
    Filed: November 21, 2017
    Publication date: September 12, 2019
    Inventors: Gilles CUNGE, Alexandra DAVYDOVA, Emilie DESPIAU-PUJO, Djawhar FERRAH, Olivier RENAULT
  • Plasma etching process
    Patent number: 9378970
    Abstract: A method and system are provided for etching a layer to be etched in a plasma etching reactor, including: forming a reactive layer by injection of at least one reactive gas to form a reactive gas plasma, which forms, together with the layer to be etched, a reactive layer which goes into the layer to be etched during etching of said layer to be etched, wherein the reactive layer reaches a steady state thickness upon completion of a determined duration of said injection; said injection being interrupted before said determined duration has elapsed so that, upon completion of the forming of the reactive layer, the thickness of the reactive layer is smaller than said steady state thickness; and removing the reactive layer by injection of at least one inert gas to form an inert gas plasma, which makes it possible to remove only the reactive layer.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: June 28, 2016
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CNRS Centre National de la Recherche Scientifique
    Inventors: Olivier Joubert, Gilles Cunge, Emilie Despiau-Pujo, Erwine Pargon, Nicolas Posseme
  • PLASMA ETCHING PROCESS
    Publication number: 20150228495
    Abstract: A method and system are provided for etching a layer to be etched in a plasma etching reactor, including: forming a reactive layer by injection of at least one reactive gas to form a reactive gas plasma, which forms, together with the layer to be etched, a reactive layer which goes into the layer to be etched during etching of said layer to be etched, wherein the reactive layer reaches a steady state thickness upon completion of a determined duration of said injection; said injection being interrupted before said determined duration has elapsed so that, upon completion of the forming of the reactive layer, the thickness of the reactive layer is smaller than said steady state thickness; and removing the reactive layer by injection of at least one inert gas to form an inert gas plasma, which makes it possible to remove only the reactive layer.
    Type: Application
    Filed: January 30, 2015
    Publication date: August 13, 2015
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT, CNRS CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Olivier JOUBERT, Gilles CUNGE, Emilie DESPIAU-PUJO, Erwine PARGON, Nicolas POSSEME