Abstract: A method for forming patterns which are aligned on either side of a thin film deposited on a substrate. The method includes depositing a first pattern layer on the thin film which may occur before or after the local etching of the thin film to form a first marking. The method includes etching the first pattern layer in order to form a first pattern and depositing a first bonding layer for covering the first marking and the first pattern. The method may include suppressing the substrate as well as etching the first bonding layer to form a second marking at the location of the first marking. The method includes depositing a second pattern layer, and etching the second pattern layer to form the second pattern.

Abstract: The invention relates to a method for forming patterns (11, 22) aligned on either side of a thin film (3) deposited on a substrate (1), said method comprising: depositing a first pattern layer (5) on the thin film (3), the deposition of the first pattern layer preceding or following local etching of the thin film (3) in order to form a first marking, etching the first pattern layer in order to form a first pattern (11), depositing a first bonding layer (3) for covering the first marking (8) and the first pattern (11), suppressing the substrate (1), etching the first bonding layer (13) in order to form a second marking (16) at the location of the first marking (8), depositing a second pattern layer (18), and etching the second pattern layer (18) in order to form the second pattern (22).

Abstract: This invention relates to an insolation mask including a transparent substrate (100) and at least one absorber/phase shifter element (112) embedded in the substrate, so as to form a monolithic assembly with the substrate. Application to photolithography.