Patents by Inventor Gilles Gaudin
Gilles Gaudin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11380839Abstract: A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material; and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization; a tunnel barrier layer; and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization; wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer; wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5° and 90°, and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.Type: GrantFiled: May 2, 2020Date of Patent: July 5, 2022Assignees: Antaios, Centre National De La Recherche ScientifiqueInventors: Witold Kula, Marc Drouard, Gilles Gaudin, Jean-Pierre Nozieres
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Publication number: 20200357982Abstract: A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material; and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization; a tunnel barrier layer; and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization; wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer; wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5° and 90°, and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.Type: ApplicationFiled: May 2, 2020Publication date: November 12, 2020Inventors: Witold KULA, Marc Drouard, Gilles Gaudin, Jean-Pierre Nozieres
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Patent number: 10833249Abstract: A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.Type: GrantFiled: September 18, 2017Date of Patent: November 10, 2020Assignees: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gilles Gaudin, Ioan Mihai Miron, Alexandru Trifu
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Patent number: 10622046Abstract: The invention relates to a magnetic memory cell (30), comprising: a stack (31) including a magnetic layer section (34) between a conductive layer section (32) and a section (36) of a layer that is different from the conductive layer, the magnetic layer having a magnetisation (35) perpendicular to the plane of the layers; a metallisation section (42) on which the stack is placed; and first, second, third and fourth metallisation arms (44D to 44G), each arm having a median axis (45D to 45G), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (44E, 44G), and mostly on its right for the third and fourth arms (44D, 44F).Type: GrantFiled: October 5, 2016Date of Patent: April 14, 2020Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIATÁ L'ÉNERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuzhiyil
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Patent number: 10381059Abstract: A magnetic memory element includes a contact with a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion. The magnetic layer has a magnetization perpendicular to the plane of the layers, and an angled conductive track-having a central portion extended by two arms, the contact being entirely arranged on the track. For each arm, a current flowing towards the contact along the median axis of the arm encounters the portion of the contact nearest to the arm primarily on the left thereof for one of the arms, and primarily on the right thereof for the other arm.Type: GrantFiled: October 15, 2016Date of Patent: August 13, 2019Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuzhiyil
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Publication number: 20190088853Abstract: A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.Type: ApplicationFiled: September 18, 2017Publication date: March 21, 2019Applicants: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Gilles Gaudin, Ioan Mihai Miron, Alexandru Trifu
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Patent number: 10224085Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.Type: GrantFiled: January 13, 2016Date of Patent: March 5, 2019Assignees: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuz Hiyil, Jean-Pierre Nozieres
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Publication number: 20180308534Abstract: A magnetic memory element includes a contact with a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion. The magnetic layer has a magnetization perpendicular to the plane of the layers, and an angled conductive track-having a central portion extended by two arms, the contact being entirely arranged on the track. For each arm, a current flowing towards the contact along the median axis of the arm encounters the portion of the contact nearest to the arm primarily on the left thereof for one of the arms, and primarily on the right thereof for the other arm.Type: ApplicationFiled: October 15, 2016Publication date: October 25, 2018Inventors: Gilles GAUDIN, loan Mihai MIRON, Olivier BOULLE, Safeer CHENATTUKUZHIYIL
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Publication number: 20180294023Abstract: The invention relates to a magnetic memory cell (30), comprising: a stack (31) including a magnetic layer section (34) between a conductive layer section (32) and a section (36) of a layer that is different from the conductive layer, the magnetic layer having a magnetisation (35) perpendicular to the plane of the layers; a metallisation section (42) on which the stack is placed; and first, second, third and fourth metallisation arms (44D to 44G), each arm having a median axis (45D to 45G), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (44E, 44G), and mostly on its right for the third and fourth arms (44D, 44F).Type: ApplicationFiled: October 5, 2016Publication date: October 11, 2018Inventors: Gilles GAUDIN, Ioan Mihai MIRON, Olivier BOULLE, Safeer CHENATTUKUZHIYIL
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Publication number: 20180005677Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.Type: ApplicationFiled: January 13, 2016Publication date: January 4, 2018Applicants: Centre National de la Recherche Scientifique, Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuz Hiyil, Jean-Pierre Nozieres
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Patent number: 9557392Abstract: Integrated magnetometer comprising a plurality of multilayer magnetoresistive sensors deposited on a surface, called the top surface, of a substantially planar substrate, characterized in that said top surface of the substrate has at least one cavity or protuberance provided with a plurality of inclined faces, and in that at least four said magnetoresistive sensors are placed on four said magnetoresistive sensors are placed on four said inclined faces, having different orientations and opposite one another in pairs, each sensor being sensitive to one component of an external magnetic field parallel to that face on which it is placed. Process for manufacturing such a magnetometer.Type: GrantFiled: January 28, 2011Date of Patent: January 31, 2017Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Alain Schuhl, Gilles Gaudin, Philippe Sabon, Pierre-Jean Zermatten, François Montaigne
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Publication number: 20130134970Abstract: Integrated magnetometer comprising a plurality of multilayer magnetoresistive sensors deposited on a surface, called the top surface, of a substantially planar substrate, characterized in that said top surface of the substrate has at least one cavity or protuberance provided with a plurality of inclined faces, and in that at least four said magnetoresistive sensors are placed on four said magnetoresistive sensors are placed on four said inclined faces, having different orientations and opposite one another in pairs, each sensor being sensitive to one component of an external magnetic field parallel to that face on which it is placed. Process for manufacturing such a magnetometer.Type: ApplicationFiled: January 28, 2011Publication date: May 30, 2013Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventors: Alain Schuhl, Gilles Gaudin, Philippe Sabon, Pierre-Jean Zermatten, François Montaigne
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Patent number: 8416618Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is parallel or perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, wherein it includes a device for causing current to flow through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field having a component along a magnetic field direction that is either parallel or perpendicular to the plane of the central layer and the currType: GrantFiled: October 6, 2010Date of Patent: April 9, 2013Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia (ICN), Institucio Catalana de Recerca I Estudis Avancats (ICREA)Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Patent number: 8384171Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle ? lying in the range 90°±60°, in particular 90°±30°, and more particularly 90°±15° relative to said magnetization direction in order to generate an effective magnetic fielType: GrantFiled: December 3, 2010Date of Patent: February 26, 2013Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique Et Aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia (ICN), Institucio Catalana de Recerca I Estudis Avancats (ICREA)Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Patent number: 8350347Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device for causing current to flow through the second outer layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field along a magnetic field direction that is perpendicular to the plane of the central layer.Type: GrantFiled: October 6, 2010Date of Patent: January 8, 2013Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia, Institucio Catalana de Recerca I Estudis Avancats (ICREA)Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Publication number: 20120098077Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle ? lying in the range 90°±60°, in particular 90°±30°, and more particularly 90°±15° relative to said magnetization direction in order to generate an effective magnetic fielType: ApplicationFiled: December 3, 2010Publication date: April 26, 2012Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Publication number: 20120018822Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device for causing current to flow through the second outer layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field along a magnetic field direction that is perpendicular to the plane of the central layer.Type: ApplicationFiled: October 6, 2010Publication date: January 26, 2012Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Publication number: 20120020152Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is parallel or perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, wherein it includes a device for causing current to flow through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field having a component along a magnetic field direction that is either parallel or perpendicular to the plane of the central layer and the currType: ApplicationFiled: October 6, 2010Publication date: January 26, 2012Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Patent number: 7729231Abstract: This invention relates to a recording medium comprising: a substrate (21) made of a material, provided with pads, a layer of recording material (23) deposited on top of the pads, thermal insulation zones (22a) in at least one part of the pads and/or substrate.Type: GrantFiled: May 24, 2005Date of Patent: June 1, 2010Assignees: Commissariat A l'Energie Atomique, Centre National de la Recherche ScientifiqueInventors: Gilles Gaudin, Emmanuelle Algre, Jean-Pierre Nozieres, Ahmad Bsiesy
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Publication number: 20090016207Abstract: This invention relates to a recording medium comprising: a substrate (21) made of a material, provided with pads, a layer of recording material (23) deposited on top of the pads, thermal insulation zones (22a) in at least one part of the pads and/or substrate.Type: ApplicationFiled: May 24, 2005Publication date: January 15, 2009Applicants: Commissariat A L'Energie Atomique, Centre National De La Recherche ScientifiqueInventors: Gilles Gaudin, Emmanuelle Algre, Jean-Pierre Nozieres, Ahmad Bsiesy