Patents by Inventor Gilles Olav Tanguy Sylvain Poulain
Gilles Olav Tanguy Sylvain Poulain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12176449Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.Type: GrantFiled: August 23, 2021Date of Patent: December 24, 2024Assignee: Maxeon Solar Pte. Ltd.Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich
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Publication number: 20240290894Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: ApplicationFiled: February 6, 2024Publication date: August 29, 2024Inventors: Yu-Chen Shen, Perine Jaffrenou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
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Publication number: 20220293801Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: ApplicationFiled: May 31, 2022Publication date: September 15, 2022Inventors: Yu-Chen Shen, Perine Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
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Patent number: 11374145Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: GrantFiled: December 5, 2019Date of Patent: June 28, 2022Assignees: SunPower Corporation, Total Marketing ServicesInventors: Yu-Chen Shen, Périne Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
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Publication number: 20220020889Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.Type: ApplicationFiled: August 23, 2021Publication date: January 20, 2022Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich
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Patent number: 11101398Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.Type: GrantFiled: October 28, 2019Date of Patent: August 24, 2021Assignees: SunPower Corporation, Total Marketing ServicesInventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich
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Publication number: 20200111924Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: ApplicationFiled: December 5, 2019Publication date: April 9, 2020Inventors: Yu-Chen Shen, Périne Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
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Publication number: 20200066930Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.Type: ApplicationFiled: October 28, 2019Publication date: February 27, 2020Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich
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Patent number: 10516071Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.Type: GrantFiled: January 30, 2017Date of Patent: December 24, 2019Assignees: SunPower Corporation, Total Marketing ServicesInventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Perine Jaffrennou, Nada Habka, Sergej Filonovich
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Publication number: 20180138354Abstract: A curing tool for fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a curing tool combines a UV-exposure stage and one or more of a deposition or an annealing stage to fabricate a solar cell. For example, a radiation curing stage can precede a back end processing stage used to perform operations on a back contact solar cell. The curing tool can therefore be used to perform a method to improve UV stability of solar cells.Type: ApplicationFiled: November 9, 2017Publication date: May 17, 2018Inventors: Périne Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Kieran Mark Tracy, Taiqing Qiu, Michael C. Johnson, Seung Bum Rim
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Publication number: 20180138328Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: ApplicationFiled: November 11, 2016Publication date: May 17, 2018Inventors: Yu-Chen Shen, Périne Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
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Publication number: 20170141255Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.Type: ApplicationFiled: January 30, 2017Publication date: May 18, 2017Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Perine Jaffrennou, Nada Habka, Sergej Filonovich
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Patent number: 9559245Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.Type: GrantFiled: June 23, 2015Date of Patent: January 31, 2017Assignees: SunPower Corporation, Total Marketing ServicesInventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich
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Publication number: 20160284922Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.Type: ApplicationFiled: June 23, 2015Publication date: September 29, 2016Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich