Abstract: An integrated circuit comprises a heat sink devoid of electronic components and interposed between a back side of a bottom electronic chip and an upper exterior side of an encapsulation, the sink comprising a front side placed on the back side of the bottom electronic chip. The back side of the bottom electronic chip comprises pads and the front side of the sink comprises pads mechanically fastened to facing pads of the back side of the bottom electronic chip.

Abstract: An integrated circuit comprises a heat sink devoid of electronic components and interposed between a back side of a bottom electronic chip and an upper exterior side of an encapsulation, the sink comprising a front side placed on the back side of the bottom electronic chip. The back side of the bottom electronic chip comprises pads and the front side of the sink comprises pads mechanically fastened to facing pads of the back side of the bottom electronic chip.

Abstract: A reconstituted electronic device including: a first face and a second face; a plurality of individual chips placed perpendicular to the faces, each individual chip carrying, on one of its surfaces, at least one component, tracks, and a connection mechanism that are flush with one or other of the faces of the reconstituted electronic device; and an encapsulant that encapsulates the individual chips.

Abstract: A reconstituted electronic device including: a first face and a second face; a plurality of individual chips placed perpendicular to the faces, each individual chip carrying, on one of its surfaces, at least one component, tracks, and a connection mechanism that are flush with one or other of the faces of the reconstituted electronic device; and an encapsulant that encapsulates the individual chips.

Abstract: The electrodes are formed by surface coating and cold compression on metal strips. They are then assembled, by hot pressing, with an electrolytic membrane. The metal strips are then removed, preferably by mechanical detachment. Current collectors are then formed on each of the electrodes by PVD type techniques that are conventional in microelectronics. The resulting thin micro-battery with high surface capacity can then be integrated in an integrated circuit, in particular by bonding by means of indium connecting balls.

Abstract: A structure including a sequence of elements for sending or receiving a signal along an axis. Two successive elements along the direction of the axis are offset with respect to each other along the direction perpendicular to the axis. The structure includes at least two layers of material deposited on a reception substrate using the layer transfer technique. The structure particularly relates to any type of structure for which elements must have a high density, such as a print bead, networks of optical components, antenna networks, etc.

Abstract: The component comprises a sealed cavity wherein the unprotected power source formed by a micro-battery or a micro-supercapacitance is deposited. Any penetration of the ambient atmosphere into the sealed cavity causes destruction of the power source by oxidation, thereby making the component inoperative. The cavity can be in a vacuum or filled with an inert gas. A pressure sensor can be fitted inside the cavity and detect a pressure variation inside the cavity to make the component inoperative when the pressure variation exceeds a predetermined threshold. The cavity can be closed by a cover or filled with a filling material consisting of silicone resin, thermosetting resin, polymer, epoxy, fusible glass or a metal chosen from indium, tin, lead or alloys thereof.

Abstract: The electrodes (1, 3) are formed by surface coating and cold compression on metal strips (2, 4). They are then assembled, by hot pressing, with an electrolytic membrane (5). The metal strips (2, 4) are then removed, preferably by mechanical detachment. Current collectors are then formed on each of the electrodes by PVD type techniques that are conventional in microelectronics. The resulting thin micro-battery with a high surface capacity can then be integrated in an integrated circuit, in particular by bonding by means of indium connecting balls.

Abstract: The invention relates to a structure comprising a sequence of elements (t) for sending or receiving a signal along an axis. Two successive elements (t) along the direction of the axis are offset with respect to each other along the direction perpendicular to the axis. The structure comprises at least two layers of material (K1, K2) deposited on a reception substrate (S1) using the layer transfer technique.