Abstract: A component, device and improved electro-optical modulation system for increasing compactness, favoring the adaptation of optical and electrical waves, and a method of fabrication. Such a component exhibits a waveguide architecture devised so that the length of the path followed by the luminous flux exhibits, with the length of the path traversed by the electrical control signal, a determined difference for decreasing or compensating for the difference in the speeds of propagation of the luminous flux and of the electrical signal. In particular, the modulation zone includes a path of the luminous flux winding around itself and successively crossing at least two indentations emanating from at least two of these control elements. It thus exhibits a length greater than that traversed by the electrical signal, for example between a first and a second region of interaction between this control signal and this luminous flux.

Abstract: An electro-optic modulation component is provided, in particular on an SOI (semiconductor-on-insulator) substrate, improved for better performance at data rates above 10 Gb/s. This improvement is obtained by reducing the influence of the capacitive effects of the structure and of its environment, and more particularly in which the influence of the capacitance of the structure itself is limited by reducing the access resistance in the doped regions or the influence of the capacitive effect of the environment is reduced by modifying the structure of the substrate vertically beneath the active region, for example by thinning the silicon substrate or the insulator, or a combination of these features. The invention furthermore relates to a process for fabricating such a component and to a device or system that includes such a component. These improvements are applicable in 3D integration assembly processes and to electronic and optical hybrid circuits.

Abstract: In a process for fabrication of an optical slot waveguide on silicon, a thin single-crystal silicon film is deposited on a substrate covered with an insulating buried layer; a local thermal oxidation is carried out over the entire depth of the thin single-crystal silicon film in order to form an insulating oxidized strip extending along the desired path of the waveguide; an insulating or semi-insulating layer is deposited on the silicon film; two openings having vertical sidewalls are excavated over the entire thickness of this insulating or semi-insulating layer, said openings being separated by a narrow gap constituting an insulating or semi-insulating vertical wall that will be the material of the slot; single-crystal silicon is grown in the openings and right to the edges of the insulating or semi-insulating wall; and then the upper part of the silicon is etched in order to complete the geometry of the waveguide.

Abstract: A component, device and improved electro-optical modulation system for increasing compactness, favouring the adaptation of optical and electrical waves, and a method of fabrication. Such a component exhibits a waveguide architecture devised so that the length of the path followed by the luminous flux exhibits, with the length of the path traversed by the electrical control signal, a determined difference for decreasing or compensating for the difference in the speeds of propagation of the luminous flux and of the electrical signal. In particular, the modulation zone includes a path of the luminous flux winding around itself and successively crossing at least two indentations emanating from at least two of these control elements. It thus exhibits a length greater than that traversed by the electrical signal, for example between a first and a second region of interaction between this control signal and this luminous flux.

Abstract: An electro-optic modulation component is provided, in particular on an SOI (semiconductor-on-insulator) substrate, improved for better performance at data rates above 10 Gb/s. This improvement is obtained by reducing the influence of the capacitive effects of the structure and of its environment, and more particularly in which the influence of the capacitance of the structure itself is limited by reducing the access resistance in the doped regions or the influence of the capacitive effect of the environment is reduced by modifying the structure of the substrate vertically beneath the active region, for example by thinning the silicon substrate or the insulator, or a combination of these features. The invention furthermore relates to a process for fabricating such a component and to a device or system that includes such a component. These improvements are applicable in 3D integration assembly processes and to electronic and optical hybrid circuits.