Patents by Inventor Gilyong Y. Chung

Gilyong Y. Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects
    Patent number: 7727340
    Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia.
    Type: Grant
    Filed: June 8, 2007
    Date of Patent: June 1, 2010
    Assignees: Vanderbilt University, Auburn University
    Inventors: Gilyong Y. Chung, Chin-Che Tin, John R. Williams, Kyle McDonald, Massimiliano De Ventra, Robert A. Weller, Socrates T. Pantelides, Leonard C. Feldman