Patents by Inventor Gin Jie Wang

Gin Jie Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7078810
    Abstract: A semiconductor device and fabrication thereof. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 ?. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.
    Type: Grant
    Filed: December 1, 2004
    Date of Patent: July 18, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Gin Jie Wang, Chao-Hsien Peng, Chii-Ming Wu, Chih-Wei Chang, Shau-Lin Shue