Patents by Inventor Gin TSAI

Gin TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low stress moisture resistant structure of semiconductor device
    Patent number: 10804176
    Abstract: A low stress moisture resistant structure of semiconductor device comprises a low stress moisture resistant layer, wherein a semiconductor device is formed on a semiconductor wafer, the semiconductor device comprises at least one pad, the low stress moisture resistant layer is coated on the semiconductor device and the semiconductor wafer so that a pad top center surface of the pad is exposed. The low stress moisture resistant layer comprises a material comprising crosslinked fluoropolymer. A before-coated stress measured on the semiconductor wafer before the low stress moisture resistant layer is coated and an after-cured stress measured on the semiconductor wafer after the low stress moisture resistant layer is coated and cured define a stress difference, the stress difference is greater than or equal to ?5×107 dyne/cm2 and less than or equal to 5×107 dyne/cm2.
    Type: Grant
    Filed: February 21, 2019
    Date of Patent: October 13, 2020
    Assignees: WIN Semiconductors Corp., The Chemours Company FC, LLC
    Inventors: Ray Chen, Xudong Chen, Shih-Hui Huang, Liang-Feng Shen, Gin Tsai, Walter Tony Wohlmuth
  • LOW STRESS MOISTURE RESISTANT STRUCTURE OF SEMICONDUCTOR DEVICE
    Publication number: 20200273764
    Abstract: A low stress moisture resistant structure of semiconductor device comprises a low stress moisture resistant layer, wherein a semiconductor device is formed on a semiconductor wafer, the semiconductor device comprises at least one pad, the low stress moisture resistant layer is coated on the semiconductor device and the semiconductor wafer so that a pad top center surface of the pad is exposed. The low stress moisture resistant layer comprises a material comprising crosslinked fluoropolymer. A before-coated stress measured on the semiconductor wafer before the low stress moisture resistant layer is coated and an after-cured stress measured on the semiconductor wafer after the low stress moisture resistant layer is coated and cured define a stress difference, the stress difference is greater than or equal to ?5×107 dyne/cm2 and less than or equal to 5×107 dyne/cm2.
    Type: Application
    Filed: February 21, 2019
    Publication date: August 27, 2020
    Inventors: Ray CHEN, Xudong CHEN, Shih-Hui HUANG, Liang-Feng SHEN, Gin TSAI, Walter Tony WOHLMUTH