Abstract: Various embodiments disclose systems and methods for employing a Sub1G signal (e.g. a signal in the range of approximately 500 Mhz or 800 mHz) for use with internal and/or external components of various user devices. The Sub1G region may provide a path loss advantage over traditional 2.4 and 5 Ghz systems because of the lower frequency in free-space path loss model. Sub 1G may also present less interference compared to 2.4 GHz (e.g., better QoS for applications such as VOIP, Gaming, etc.). In some of the disclosed embodiments, Sub1G may be employed using current 2.4G or 5G Wireless LAN chipset with RF Up/Down Converters. In some embodiments, the Sub1G approach may be used to create a Long Range Bridge, Long Range Extender, Long Range Client, Long Range Hotspot, etc.

Abstract: Various embodiments disclose systems and methods for employing a Sub1G signal (e.g. a signal in the range of approximately 500 Mhz or 800 mHz) for use with internal and/or external components of various user devices. The Sub1G region may provide a path loss advantage over traditional 2.4 and 5 Ghz systems because of the lower frequency in free-space path loss model. Sub 1G may also present less interference compared to 2.4 GHz (e.g., better QoS for applications such as VOIP, Gaming, etc.). In some of the disclosed embodiments, Sub1G may be employed using current 2.4G or 5G Wireless LAN chipset with RF Up/Down Converters. In some embodiments, the Sub1G approach may be used to create a Long Range Bridge, Long Range Extender, Long Range Client, Long Range Hotspot, etc.

Abstract: Various embodiments disclose systems and methods for employing a Sub1G signal (e.g. a signal in the range of approximately 500 Mhz or 800 mHz) for use with internal and/or external components of various user devices. The Sub1G region may provide a path loss advantage over traditional 2.4 and 5 Ghz systems because of the lower frequency in free-space path loss model. Sub1G may also present less interference compared to 2.4 GHz (e.g., better QoS for applications such as VOIP, Gaining, etc.). In some of the disclosed embodiments, Sub1G may be employed using current 2.4G or 5G Wireless LAN chipset with RF Up/Down Converters. In some embodiments, the Sub1G approach may be used to create a Long Range Bridge, Long Range Extender, Long Range Client, Long Range Hotspot, etc.

Abstract: Various embodiments disclose systems and methods for employing a Sub1G signal (e.g. a signal in the range of approximately 500 Mhz or 800 mHz) for use with internal and/or external components of various user devices. The Sub1G region may provide a path loss advantage over traditional 2.4 and 5 Ghz systems because of the lower frequency in free-space path loss model. Sub 1G may also present less interference compared to 2.4 GHz (e.g., better QoS for applications such as VOIP, Gaming, etc.). In some of the disclosed embodiments, Sub1G may be employed using current 2.4G or 5G Wireless LAN chipset with RF Up/Down Converters. In some embodiments, the Sub1G approach may be used to create a Long Range Bridge, Long Range Extender, Long Range Client, Long Range Hotspot, etc.

Abstract: A semiconductor device and method of manufacturing are provided that include forming an alloy layer having the formula MbX over a silicon-containing substrate, where Mb is a metal and X is an alloying additive, the alloy layer being annealed to form a metal alloy silicide layer on the gate region and in active regions of the semiconductor device.

Abstract: A method for forming nickel silicide includes degassing a semiconductor substrate that includes a silicon surface. After the degassing operation, the substrate is cooled prior to a metal deposition process, during a metal deposition process, or both. The cooling suppresses the temperature of the substrate to a temperature less than the temperature required for the formation of nickel silicide. Nickel diffusion is minimized during the deposition process. After deposition, an annealing process is used to urge the formation of a uniform silicide film. In various embodiments, the metal film may include a binary phase alloy containing nickel and a further element.

Abstract: A semiconductor device and fabrication thereof. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 ?. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.