Patents by Inventor Gina L. Christenson

Gina L. Christenson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of Ohmic contacts in III-nitride light emitting devices
    Patent number: 7345323
    Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 ? cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
    Type: Grant
    Filed: March 30, 2005
    Date of Patent: March 18, 2008
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Werner K. Goetz, Michael D. Camras, Xiaoping Chen, legal representative, Gina L. Christenson, R. Scott Kern, Chihping Kuo, Paul Scott Martin, Daniel A. Steigerwald, Changhua Chen
  • Formation of Ohmic contacts in III-nitride light emitting devices
    Patent number: 6914272
    Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 ?cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
    Type: Grant
    Filed: November 24, 2003
    Date of Patent: July 5, 2005
    Assignee: Lumileds Lighting U.S., LLC
    Inventors: Werner K. Goetz, Michael D. Camras, Changhua Chen, Gina L. Christenson, R. Scott Kern, Chihping Kuo, Paul Scott Martin, Daniel A. Steigerwald
  • Formation of Ohmic contacts in III-nitride light emitting devices
    Publication number: 20040075097
    Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
    Type: Application
    Filed: November 24, 2003
    Publication date: April 22, 2004
    Inventors: Werner K. Goetz, Michael D. Camras, Changhua Chen, Gina L. Christenson, R. Scott Kern, Chihping Kuo, Paul Scott Martin, Daniel A. Steigerwald
  • Formation of ohmic contacts in III-nitride light emitting devices
    Patent number: 6657300
    Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
    Type: Grant
    Filed: January 5, 2001
    Date of Patent: December 2, 2003
    Assignee: Lumileds Lighting U.S., LLC
    Inventors: Werner K. Goetz, Michael D. Camras, Changhua Chen, Gina L. Christenson, R. Scott Kern, Chihping Kuo, Paul Scott Martin, Daniel A. Steigerwald
  • Formation of ohmic contacts in III-nitride light emitting devices
    Publication number: 20020008243
    Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
    Type: Application
    Filed: January 5, 2001
    Publication date: January 24, 2002
    Inventors: Werner K. Goetz, Michael D. Camras, Changhua Chen, Xiaoping Chen, Gina L. Christenson, R. Scott Kern, Chihping Kuo, Paul Scott Martin, Daniel A. Steigerwald