Abstract: A pixel circuit of a photoelectric conversion device includes two photoelectric conversion elements, each including two impurity region in each of two different layers. In at least one pixel of the pixel circuits, a first separation region separating the two impurity regions in a first layer and a second separation region separating the two impurity regions in a second layer extend in directions different from each other in a planer view. An impurity region in a photoelectric conversion element includes a first portion overlapping the first separation region in the planar view, a second portion adjacent to a first transfer gate, and a third portion located on an opposite side of the second portion with respect to the first portion. The impurity region has a potential distribution monotonically decreasing from the third portion to the second portion for signal charges.

Abstract: A photoelectric conversion apparatus in one aspect of the present disclosure includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of a second conductivity type in which a distance from a first surface being greater than a distance from the substrate to the third semiconductor region, a first isolation portion disposed between the first semiconductor region and the second semiconductor region, a microlens commonly disposed in the first semiconductor region and the second semiconductor region, and a fifth semiconductor region of the second conductivity type disposed between the first isolation portion and the fourth semiconductor region. The third semiconductor region is disposed between the fourth semiconductor region and the fifth semiconductor region.

Abstract: Provided is a solid state imaging device including a pixel in which the pixel has a photoelectric conversion unit provided in a semiconductor substrate and a light guide having a bottom that emits an incident light to the photoelectric conversion unit. The photoelectric conversion unit includes a first semiconductor region of a first conductivity type provided at a first depth of the semiconductor substrate, and second and third semiconductor regions of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and spaced apart from each other by a first region. Each of the second semiconductor region, the third semiconductor region, and the first region overlaps with a part of the first semiconductor region in a planar view. At least a part of the bottom and at least a part of the first region overlap with each other in the planar view.

Abstract: A photoelectric conversion unit includes first, second, and third semiconductor regions having first, second, and first conductivity types, respectively. A fourth semiconductor region between the first and third semiconductor regions at the same depth as the second semiconductor region. A charge holding portion includes a fifth semiconductor region of the first conductivity type. A transfer transistor has a region between the first and fifth semiconductor regions as a channel portion. A pixel isolation portion includes a sixth semiconductor region of the second conductivity type between the third semiconductor regions of adjacent pixels. A relationship V6>V5>V4 is satisfied, where a potential of the fourth semiconductor region to charges is V4, a potential of a region having the highest potential to charges in the channel portion with the transfer transistor being in an off-state is V5, and a potential of the sixth semiconductor region to charges is V6.

Abstract: According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.

Abstract: A photoelectric conversion apparatus in one aspect of the present disclosure includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of a second conductivity type in which a distance from a first surface being greater than a distance from the substrate to the third semiconductor region, a first isolation portion disposed between the first semiconductor region and the second semiconductor region, a microlens commonly disposed in the first semiconductor region and the second semiconductor region, and a fifth semiconductor region of the second conductivity type disposed between the first isolation portion and the fourth semiconductor region. The third semiconductor region is disposed between the fourth semiconductor region and the fifth semiconductor region.

Abstract: A method of manufacturing an imaging device, including a first buried diode including a first semiconductor region and a second semiconductor region and a second buried diode including a third semiconductor region and a fourth semiconductor region, includes implanting first impurity ions of a first conductivity type into a first region and a third region between the first region and a second region, and implanting second impurity ions of the first conductivity type into the second region and the third region, wherein the first semiconductor region is formed by implanting the first impurity ions, the third semiconductor region is formed by implanting the second impurity ions, and a fifth semiconductor region having a higher impurity concentration than the first and the second semiconductor regions is formed in the third region by implanting the first and second impurity ions.

Abstract: A photoelectric conversion unit includes first, second, and third semiconductor regions having first, second, and first conductivity types, respectively. A fourth semiconductor region between the first and third semiconductor regions at the same depth as the second semiconductor region. A charge holding portion includes a fifth semiconductor region of the first conductivity type. A transfer transistor has a region between the first and fifth semiconductor regions as a channel portion. A pixel isolation portion includes a sixth semiconductor region of the second conductivity type between the third semiconductor regions of adjacent pixels. A relationship V6>V5>V4 is satisfied, where a potential of the fourth semiconductor region to charges is V4, a potential of a region having the highest potential to charges in the channel portion with the transfer transistor being in an off-state is V5, and a potential of the sixth semiconductor region to charges is V6.

Abstract: An imaging device includes a wiring connected to an output node of an amplification transistor, and the wiring is provided at a position between an output line electrically connected to the output node of the amplification transistor and a gate of the amplification transistor.

Abstract: A solid-state imaging device includes a plurality of pixels each including a photoelectric converter that generates charges by photoelectric conversion and a charge holding portion that holds charges transferred from the photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type provided in a surface portion of a semiconductor substrate, a second semiconductor region of a second conductivity type provided under the first semiconductor region and configured to accumulate generated charges, a third semiconductor region of the first conductivity type provided under the second semiconductor region, and a fourth semiconductor region of the first conductivity type provided in a part of a portion between the first and second semiconductor regions. In a plan view, the second semiconductor region has a first region not overlapping with the third semiconductor region, and the fourth semiconductor region overlaps with at least a part of the first region.

Abstract: A method of manufacturing an imaging device, including a first buried diode including a first semiconductor region and a second semiconductor region and a second buried diode including a third semiconductor region and a fourth semiconductor region, includes implanting first impurity ions of a first conductivity type into a first region and a third region between the first region and a second region, and implanting second impurity ions of the first conductivity type into the second region and the third region, wherein the first semiconductor region is formed by implanting the first impurity ions, the third semiconductor region is formed by implanting the second impurity ions, and a fifth semiconductor region having a higher impurity concentration than the first and the second semiconductor regions is formed in the third region by implanting the first and second impurity ions.

Abstract: According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.

Abstract: Provided is a solid state imaging device including a pixel in which the pixel has a photoelectric conversion unit provided in a semiconductor substrate and a light guide having a bottom that emits an incident light to the photoelectric conversion unit. The photoelectric conversion unit includes a first semiconductor region of a first conductivity type provided at a first depth of the semiconductor substrate, and second and third semiconductor regions of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and spaced apart from each other by a first region. Each of the second semiconductor region, the third semiconductor region, and the first region overlaps with a part of the first semiconductor region in a planar view. At least a part of the bottom and at least a part of the first region overlap with each other in the planar view.

Abstract: An imaging device includes a wiring connected to an output node of an amplification transistor, and the wiring is provided at a position between an output line electrically connected to the output node of the amplification transistor and a gate of the amplification transistor.

Abstract: A solid-state imaging device includes a plurality of pixels each including a photoelectric converter that generates charges by photoelectric conversion and a charge holding portion that holds charges transferred from the photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type provided in a surface portion of a semiconductor substrate, a second semiconductor region of a second conductivity type provided under the first semiconductor region and configured to accumulate generated charges, a third semiconductor region of the first conductivity type provided under the second semiconductor region, and a fourth semiconductor region of the first conductivity type provided in a part of a portion between the first and second semiconductor regions. In a plan view, the second semiconductor region has a first region not overlapping with the third semiconductor region, and the fourth semiconductor region overlaps with at least a part of the first region.

Abstract: Each of multiple pixels includes a photoelectric conversion unit. A first holding unit is configured to hold a charge generated by the photoelectric conversion unit, at a location different from location of the photoelectric conversion unit. A second holding unit is configured to hold a charge held by the first holding unit at a location different from locations of both of the first holding unit and the photoelectric conversion unit. An amplifying unit includes an input node different from the second holding unit and is configured to output a signal based on a charge transferred to the input node from the second holding unit. A first discharge unit includes a charge draining node which is electrically connected to a line where a predetermined voltage is supplied. The first discharge unit discharges a charge held by the first holding unit to the charge draining node.

Abstract: A solid-state image sensor is provided. The sensor includes a substrate having a light-receiving surface. The substrate includes a charge accumulation portion that forms part of a photoelectric conversion element, a charge holding portion arranged at a position deeper than the charge accumulation portion from the light-receiving surface, and a first transfer portion configured to transfer charges generated by the photoelectric conversion element to the charge holding portion along a depth direction of the substrate. A distance between the charge holding portion and the light-receiving surface is not less than 4 ?m.

Abstract: Provided is a solid-state imaging apparatus including: imaging pixels each configured to generate an imaging signal through photoelectric conversion; focus detection pixels each configured to generate a focusing signal through photoelectric conversion; and an adding unit configured to add the imaging signals generated by the imaging pixels to generate an added imaging signal, and configured to add the focusing signals generated by the focus detection pixels to generate an added focusing signal, in which a number of the focusing signals to be used by the adding unit to generate one added focusing signal is larger than a number of the imaging signals to be used by the adding unit to generate one added imaging signal, and operation for outputting the added focusing signal and operation for outputting each of the focusing signals without adding are selectively carried out.

Abstract: Each of multiple pixels includes a photoelectric conversion unit. A first holding unit is configured to hold a charge generated by the photoelectric conversion unit, at a location different from location of the photoelectric conversion unit. A second holding unit is configured to hold a charge held by the first holding unit at a location different from locations of both of the first holding unit and the photoelectric conversion unit. An amplifying unit includes an input node different from the second holding unit and is configured to output a signal based on a charge transferred to the input node from the second holding unit. A first discharge unit includes a charge draining node which is electrically connected to a line where a predetermined voltage is supplied. The first discharge unit discharges a charge held by the first holding unit to the charge draining node.

Abstract: A solid-state image sensor is provided. The sensor includes a substrate having a light-receiving surface. The substrate includes a charge accumulation portion that forms part of a photoelectric conversion element, a charge holding portion arranged at a position deeper than the charge accumulation portion from the light-receiving surface, and a first transfer portion configured to transfer charges generated by the photoelectric conversion element to the charge holding portion along a depth direction of the substrate. A distance between the charge holding portion and the light-receiving surface is not less than 4 ?m.