Abstract: MEMS device having a substrate of semiconductor material; a first structural layer of semiconductor material, on the substrate; a second structural layer of semiconductor material, on the first structural layer; an active portion, accommodating active structures formed in the first structural layer and/or in the second structural layer; a connection portion, accommodating a plurality of connection structures and arranged laterally to the active portion; and a plurality of conductive regions, arranged on the substrate and extending between the active portion and the connection portion. Each connection structure is formed by a first connection portion, in electrical contact with a respective conductive region and formed in the first structural layer, and by a second connection portion, on the first connection portion and in electrical continuity therewith, the second connection portion formed in the second structural layer. The first connection portion has a greater thickness than the second connection portion.

Abstract: Described herein is a microelectromechanical sensor device, comprising: a stack of a first die that integrates a pressure-detection structure and a second die that integrates an inertial detection structure, the first die constituting a cap for the inertial detection structure and being bonded to the second die so as to define a hermetic cavity. The first die has a first substrate, having a front surface and a rear surface that is bonded to said second die, a buried cavity being buried and entirely contained in the first substrate and being arranged in a position corresponding to the front surface, from which it is separated by a membrane. In particular, the aforesaid buried cavity is distinct and separate from the hermetic cavity.

Abstract: A MEMS pressure transducer includes a semiconductor body, a lower dielectric region arranged above the semiconductor body, and a fixed electrode region and a lower anchoring region, which are formed by conductive material, are arranged on the lower dielectric region and are laterally separated from each other. A membrane of conductive material is suspended above the fixed electrode region so as to delimit a cavity upwardly, the fixed electrode region facing the cavity, the membrane being deformable as a function of pressure and forming a variable capacitor together with the fixed electrode region. An upper anchoring region of conductive material laterally delimits the cavity and is interposed, in direct contact, between the membrane and the lower anchoring region.

Abstract: A PMUT includes a substrate being doped and having a plurality of conductive vias formed therein, each conductive via formed of a portion of the substrate extending completely from a back side of the substrate to a front side of the substrate and being encircled by an isolating structure that electrically isolates that portion of the substrate from other portions of the substrate. An insulating layer stacked on the front side of the substrate and has through-holes therein over the plurality of conductive vias. An interconnection layer is stacked on the insulating layer and is connected to the plurality of conductive vias. A membrane carried is by the interconnection layer and underlying substrate, the membrane being shaped so as to delimit a chamber. A piezoelectric stack formed on the membrane over the chamber and vibrates the membrane in response to application of an alternating voltage to the piezoelectric stack.

Abstract: A method of making a MEMS device including forming a mirror stack on a handle layer, applying a first bonding layer to the mirror stack, and disposing a substrate on the first bonding layer. The handle layer is removed and a second bonding layer is applied. A cap layer is disposed on the second bonding layer. The mirror stack is formed by disposing a silicon layer on the handle layer, disposing a first insulating layer on the silicon layer, etching portions of the first insulating layer, and depositing a first conductive layer on the first insulating layer. The formation also includes depositing a second insulating layer on the first conductive layer, a portion of the second insulating layer to expose a portion of the first conductive layer exposed, and forming a conductive pad on the exposed portion of the first conductive layer.

Abstract: Disclosed herein is a method of forming a thermal sensor, including patterning an active layer on a first face of a handle substrate to form a frame, a mass carrying at least one thermally isolated MOS (TMOS) transistor, and a spring structure connecting the mass to the frame while thermally isolating the mass from the frame. The frame is then bonded to pads on a first face of an integrated circuit substrate. The handle substrate is removed, and a top cap is bonded to the first face of the integrated circuit substrate to enclose at least the mass and spring within the sealed cavity.

Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.

Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.

Abstract: A device and method for manufacturing a device comprising two semiconductor dice. The device is formed by a first die and a second die. The first die is of semiconductor material and integrates electronic components. The second die has a main surface, forms patterned structures, and is bonded to the first die. Internal electrical coupling structures electrically couple the main surface of the first die to the second die. External connection regions extend on the main surface of the first die. A package packages the first die, the second die and the internal electrical coupling structures and partially surrounds the external connection regions, the external connection regions partially protruding from the package.

Abstract: A method for manufacturing a PMUT device including a piezoelectric element located at a membrane element is provided. The method includes receiving a silicon on insulator substrate having a first silicon layer, an oxide layer, and a second silicon layer. Portions of a first surface of the second silicon layer are exposed by removing exposed side portions of the first silicon layer and corresponding portions of the oxide layer, and a central portion including the remaining portions of the first silicon layer and of the oxide layer is defined. Anchor portions for the membrane element are formed at the exposed portions of the first surface of the second silicon layer. The piezoelectric element is formed above the central portion, and the membrane element is defined by selectively removing the second layer and removing the remaining portion of the oxide from under the remaining portion of the first silicon layer.

Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.

Abstract: A microelectromechanical button device is provided with a detection structure having: a substrate of semiconductor material with a front surface and a rear surface; a buried electrode arranged on the substrate; a mobile electrode, arranged in a structural layer overlying the substrate and elastically suspended above the buried electrode at a separation distance so as to form a detection capacitor; and a cap coupled over the structural layer and having a first main surface facing the structural layer and a second main surface that is designed to be mechanically coupled to a deformable portion of a case of an electronic apparatus of a portable or wearable type.

Abstract: Electronic device including: a MEMS sensor device including a functional structure which transduces a chemical or physical quantity into a corresponding electrical quantity; a cap including a semiconductive substrate; and a bonding dielectric region, which mechanically couples the cap to the MEMS sensor device. The cap further includes a conductive region, which extends between the semiconductive substrate and the MEMS sensor device and includes: a first portion, which is arranged laterally with respect to the semiconductive substrate and is exposed, so as to be electrically coupleable to a terminal at a reference potential by a corresponding wire bonding; and a second portion, which contacts the semiconductive substrate.

Abstract: An ultrasonic MEMS acoustic transducer formed in a body of semiconductor material having first and second surfaces opposite to one another. A first cavity extends in the body and delimits at the bottom a sensitive portion, which extends between the first cavity and the first surface of the body. The sensitive portion houses a second cavity and forms a membrane that extends between the second cavity and the first surface of the body. An elastic supporting structure extends between the sensitive portion and the body and is suspended over the first cavity.

Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.

Abstract: A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.

Abstract: A method of making a MEMS device including forming a mirror stack on a handle layer, applying a first bonding layer to the mirror stack, and disposing a substrate on the first bonding layer. The handle layer is removed and a second bonding layer is applied. A cap layer is disposed on the second bonding layer. The mirror stack is formed by disposing a silicon layer on the handle layer, disposing a first insulating layer on the silicon layer, etching portions of the first insulating layer, and depositing a first conductive layer on the first insulating layer. The formation also includes depositing a second insulating layer on the first conductive layer, a portion of the second insulating layer to expose a portion of the first conductive layer exposed, and forming a conductive pad on the exposed portion of the first conductive layer.

Abstract: A method for making a micro-electro mechanical (MEMS) device includes forming a MEMS mirror stack on a handle layer, and applying a first bonding layer to the MEMS mirror stack. The method continues with disposing a substrate on the first bonding layer such that the MEMS mirror stack is mechanically anchored to the substrate and so as to seal against ingress of environmental contaminants, removing the handle layer, and applying a second bonding layer to the MEMS mirror stack. A cap layer is disposed on the second bonding layer such that the cap layer is mechanically anchored to the MEMS mirror stack and so as to seal against ingress of environmental contaminants.

Abstract: A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.

Abstract: A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.