Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.

Abstract: A microelectromechanical button device is provided with a detection structure having: a substrate of semiconductor material with a front surface and a rear surface; a buried electrode arranged on the substrate; a mobile electrode, arranged in a structural layer overlying the substrate and elastically suspended above the buried electrode at a separation distance so as to form a detection capacitor; and a cap coupled over the structural layer and having a first main surface facing the structural layer and a second main surface that is designed to be mechanically coupled to a deformable portion of a case of an electronic apparatus of a portable or wearable type.

Abstract: Electronic device including: a MEMS sensor device including a functional structure which transduces a chemical or physical quantity into a corresponding electrical quantity; a cap including a semiconductive substrate; and a bonding dielectric region, which mechanically couples the cap to the MEMS sensor device. The cap further includes a conductive region, which extends between the semiconductive substrate and the MEMS sensor device and includes: a first portion, which is arranged laterally with respect to the semiconductive substrate and is exposed, so as to be electrically coupleable to a terminal at a reference potential by a corresponding wire bonding; and a second portion, which contacts the semiconductive substrate.

Abstract: An ultrasonic MEMS acoustic transducer formed in a body of semiconductor material having first and second surfaces opposite to one another. A first cavity extends in the body and delimits at the bottom a sensitive portion, which extends between the first cavity and the first surface of the body. The sensitive portion houses a second cavity and forms a membrane that extends between the second cavity and the first surface of the body. An elastic supporting structure extends between the sensitive portion and the body and is suspended over the first cavity.

Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.

Abstract: A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.

Abstract: A method of making a MEMS device including forming a mirror stack on a handle layer, applying a first bonding layer to the mirror stack, and disposing a substrate on the first bonding layer. The handle layer is removed and a second bonding layer is applied. A cap layer is disposed on the second bonding layer. The mirror stack is formed by disposing a silicon layer on the handle layer, disposing a first insulating layer on the silicon layer, etching portions of the first insulating layer, and depositing a first conductive layer on the first insulating layer. The formation also includes depositing a second insulating layer on the first conductive layer, a portion of the second insulating layer to expose a portion of the first conductive layer exposed, and forming a conductive pad on the exposed portion of the first conductive layer.

Abstract: A method for making a micro-electro mechanical (MEMS) device includes forming a MEMS mirror stack on a handle layer, and applying a first bonding layer to the MEMS mirror stack. The method continues with disposing a substrate on the first bonding layer such that the MEMS mirror stack is mechanically anchored to the substrate and so as to seal against ingress of environmental contaminants, removing the handle layer, and applying a second bonding layer to the MEMS mirror stack. A cap layer is disposed on the second bonding layer such that the cap layer is mechanically anchored to the MEMS mirror stack and so as to seal against ingress of environmental contaminants.

Abstract: A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.

Abstract: A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.

Abstract: A method for manufacturing a filtering module comprising the steps of: forming a multilayer body comprising a filter layer of semiconductor material and having a thickness of less than 10 ?m, a first structural layer coupled to a first side of the filter layer, and a second structural layer coupled to a second side, opposite to the first side, of the filter layer; forming a recess in the first structural layer, which extends throughout its thickness; removing selective portions, exposed through the recess, of the filter layer to form a plurality of openings, which extend throughout the thickness of the filter layer; and completely removing the second structural layer to connect fluidically the first and second sides of the filter layer, thus forming a filtering membrane designed to inhibit passage of contaminating particles.

Abstract: A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.

Abstract: A method for manufacturing a semiconductor die, comprising the steps of: providing a MEMS device having a structural body, provided with a cavity, and a membrane structure suspended over the cavity; coupling the structural body to a filtering module via direct bonding or fusion bonding so that a first portion of the filtering module extends over the cavity and a second portion of the filtering module extends seamlessly as a prolongation of the structural body; and etching selective portions of the filtering module in an area corresponding to the first portion, to form filtering openings fluidically coupled to the cavity. The semiconductor die is, for example, a microphone.

Abstract: A method for manufacturing a PMUT device including a piezoelectric element located at a membrane element is provided. The method includes receiving a silicon on insulator substrate having a first silicon layer, an oxide layer, and a second silicon layer. Portions of a first surface of the second silicon layer are exposed by removing exposed side portions of the first silicon layer and corresponding portions of the oxide layer, and a central portion including the remaining portions of the first silicon layer and of the oxide layer is defined. Anchor portions for the membrane element are formed at the exposed portions of the first surface of the second silicon layer. The piezoelectric element is formed above the central portion, and the membrane element is defined by selectively removing the second layer and removing the remaining portion of the oxide from under the remaining portion of the first silicon layer.

Abstract: A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.

Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.

Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

Abstract: A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

Abstract: An ultrasonic MEMS acoustic transducer formed in a body of semiconductor material having first and second surfaces opposite to one another. A first cavity extends in the body and delimits at the bottom a sensitive portion, which extends between the first cavity and the first surface of the body. The sensitive portion houses a second cavity and forms a membrane that extends between the second cavity and the first surface of the body. An elastic supporting structure extends between the sensitive portion and the body and is suspended over the first cavity.