Abstract: In accordance with a first aspect of the present disclosure, an antenna unit is provided, comprising: an integrated circuit package containing an integrated circuit die and an antenna structure coupled to the integrated circuit die; a dielectric layer separated from the integrated circuit package, wherein the dielectric layer is placed at a predefined distance above an upper surface of the integrated circuit package. In accordance with a second aspect of the present disclosure, a corresponding method of producing an antenna unit is conceived.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming an assembly including placing a semiconductor die and a launcher structure on a carrier substrate, encapsulating at least a portion of the semiconductor die and the launcher structure, and applying a redistribution layer on a surface of the semiconductor die and a surface of the launcher structure to connect a bond pad of the semiconductor die with an antenna launcher of the launcher structure. The assembly is attached to a substrate and a waveguide overlapping the assembly is attached to the substrate. The waveguide structure is physically decoupled from the assembly.

Abstract: A package includes an integrated circuit, IC, die having circuitry configured to generate signalling for transmission to a waveguide and/or receive signalling from a waveguide via a launcher. The die is coupled to an interconnect layer extending out from a footprint of the die. The launcher is formed in a launcher-substrate, separate from the die. The launcher is coupled to the die to pass the signalling therebetween by a connection in the interconnect layer. The launcher includes a launcher element mounted in a first plane within the launcher-substrate and a waveguide-cavity including a ground plane arranged opposed to and spaced from the first plane. The waveguide-cavity is further defined by at least one side wall extending from the ground plane towards the first plane. The die and launcher are at least partially surrounded by mould material of the package.

Abstract: A method of manufacturing a device is provided. The method includes forming a first cavity in a first substrate with the first cavity having a first depth. A second cavity is formed in a second substrate with the second cavity having a second depth. The first cavity and the second cavity are aligned with each other. The first substrate is affixed to the second substrate to form a waveguide substrate having a hollow waveguide with a first dimension substantially equal to the first depth plus the second depth. A conductive layer is formed on the sidewalls of the hollow waveguide. The waveguide substrate is placed over a packaged semiconductor device, the hollow waveguide aligned with a launcher of the packaged semiconductor device.

Abstract: A method of forming a semiconductor device is provided. The method includes providing a radiating element structure and a semiconductor die. The radiating element structure includes a non-conductive substrate, a radiating element formed at a top side of the non-conductive substrate, and a conductive ring formed at the top side of the non-conductive substrate substantially surrounding the radiating element. The semiconductor die is interconnected with the radiating element by way of a conductive trace. An encapsulant encapsulates at least a portion of the radiating element structure. A top surface of the conductive ring exposed at a top surface of the encapsulant. A waveguide interface material is applied on at least a portion of the top surface of the encapsulant.

Abstract: A mechanism is provided to remove heat from an integrated circuit (IC) device die by directing heat through a waveguide to a heat sink. The waveguide is mounted on top of a package containing the IC device die. The waveguide is thermally coupled to the IC device die. The waveguide transports the heat to a heat sink coupled to the waveguide and located adjacent to the package on top of a printed circuit board on which the package is mounted. Embodiments provide both thermal dissipation of the generated heat while at the same time maintaining good radio frequency performance of the waveguide.

Abstract: A semiconductor device is provided. The device includes a semiconductor die and a launcher structure attached to a package substrate. The launcher structure includes a launcher substrate, a launcher portion formed from a conductive layer at a major surface of the launcher substrate, and a translation pad formed from the conductive layer at the major surface. The translation pad is separate from the launcher portion. A translation feature is formed on the translation pad. The translation feature is configured for alignment of a waveguide structure.

Abstract: A mechanism is provided to remove heat from an integrated circuit (IC) device die by directing heat through a waveguide to a heat sink. The waveguide is mounted on top of a package containing the IC device die. The waveguide is thermally coupled to the IC device die. The waveguide transports the heat to a heat sink coupled to the waveguide and located adjacent to the package on top of a printed circuit board on which the package is mounted. Embodiments provide both thermal dissipation of the generated heat while at the same time maintaining good radio frequency performance of the waveguide.

Abstract: A mechanism is provided to remove heat from an integrated circuit (IC) device die by directing heat through a waveguide to a heat sink. The waveguide is mounted on top of a package containing the IC device die. The waveguide is thermally coupled to the IC device die. The waveguide transports the heat to a heat sink coupled to the waveguide and located adjacent to the package on top of a printed circuit board on which the package is mounted. Embodiments provide both thermal dissipation of the generated heat while at the same time maintaining good radio frequency performance of the waveguide.

Abstract: A method of testing a semiconductor device. An apparatus comprising a semiconductor device and a test apparatus. The semiconductor device includes an integrated circuit and a plurality of external radiating elements at a surface of the device, the radiating elements include transmit elements and receive elements. The test apparatus includes a surface for placing against the surface of the device. The test apparatus also includes at least one waveguide, which extends through the test apparatus for routing electromagnetic radiation transmitted by one of the transmit elements of the device to one of the receive elements of the device. Each waveguide comprises a plurality of waveguide openings for coupling electromagnetically to corresponding radiating elements of the plurality of radiating elements located at the surface of the device. A spacing between the waveguide openings of each waveguide is larger than, or smaller than a spacing between the corresponding radiating elements.

Abstract: A package comprising, an integrated circuit, IC, die comprising circuitry configured to generate signalling for transmission to a waveguide and/or receive signalling from a waveguide via a launcher, the die coupled to an interconnect layer extending out from a footprint of the die; and the launcher is formed in a launcher-substrate, separate from the die, the launcher coupled to the die to pass said signalling therebetween by a connection in said interconnect layer, wherein said launcher comprises a launcher element mounted in a first plane within the launcher-substrate and a waveguide-cavity comprising a ground plane arranged opposed to and spaced from the first plane, the waveguide-cavity further defined by at least one side wall extending from the ground plane towards the first plane; and wherein said die and said launcher are at least partially surrounded by mould material of said package.

Abstract: A method of manufacturing a device is provided. The method includes forming a first cavity in a first substrate with the first cavity having a first depth. A second cavity is formed in a second substrate with the second cavity having a second depth. The first cavity and the second cavity are aligned with each other. The first substrate is affixed to the second substrate to form a waveguide substrate having a hollow waveguide with a first dimension substantially equal to the first depth plus the second depth. A conductive layer is formed on the sidewalls of the hollow waveguide. The waveguide substrate is placed over a packaged semiconductor device, the hollow waveguide aligned with a launcher of the packaged semiconductor device.

Abstract: A mechanism is provided to remove heat from an integrated circuit (IC) device die by directing heat through a waveguide to a heat sink. Embodiments provide the waveguide mounted on top of a package containing the IC device die. The waveguide is thermally coupled to the IC device die. The waveguide transports the heat to a heat sink coupled to the waveguide and located adjacent to the package on top of a printed circuit board on which the package is mounted. Embodiments provide both thermal dissipation of the generated heat while at the same time maintaining good radio frequency (RF) performance of the waveguide.

Abstract: A semiconductor device is provided. The device includes a semiconductor die and a launcher structure attached to a package substrate. The launcher structure includes a launcher substrate, a launcher portion formed from a conductive layer at a major surface of the launcher substrate, and a translation pad formed from the conductive layer at the major surface. The translation pad is separate from the launcher portion. A translation feature is formed on the translation pad. The translation feature is configured for alignment of a waveguide structure.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming an assembly including placing a semiconductor die and a launcher structure on a carrier substrate, encapsulating at least a portion of the semiconductor die and the launcher structure, and applying a redistribution layer on a surface of the semiconductor die and a surface of the launcher structure to connect a bond pad of the semiconductor die with an antenna launcher of the launcher structure. The assembly is attached to a substrate and a waveguide overlapping the assembly is attached to the substrate. The waveguide structure is physically decoupled from the assembly.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming an assembly including placing a semiconductor die and a launcher structure on a carrier substrate, encapsulating at least a portion of the semiconductor die and the launcher structure, and applying a redistribution layer on a surface of the semiconductor die and a surface of the launcher structure to connect a bond pad of the semiconductor die with an antenna launcher of the launcher structure. The assembly is attached to a substrate and a waveguide overlapping the assembly is attached to the substrate. The waveguide structure is physically decoupled from the assembly.

Abstract: A method of testing a semiconductor device. An apparatus comprising a semiconductor device and a test apparatus. The semiconductor device includes an integrated circuit and a plurality of external radiating elements at a surface of the device, the radiating elements include transmit elements and receive elements. The test apparatus includes a surface for placing against the surface of the device. The test apparatus also includes at least one waveguide, which extends through the test apparatus for routing electromagnetic radiation transmitted by one of the transmit elements of the device to one of the receive elements of the device. Each waveguide comprises a plurality of waveguide openings for coupling electromagnetically to corresponding radiating elements of the plurality of radiating elements located at the surface of the device. A spacing between the waveguide openings of each waveguide is larger than, or smaller than a spacing between the corresponding radiating elements.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming an assembly including placing a semiconductor die and a launcher structure on a carrier substrate, encapsulating at least a portion of the semiconductor die and the launcher structure, and applying a redistribution layer on a surface of the semiconductor die and a surface of the launcher structure to connect a bond pad of the semiconductor die with an antenna launcher of the launcher structure. The assembly is attached to a substrate and a waveguide overlapping the assembly is attached to the substrate. The waveguide structure is physically decoupled from the assembly.

Abstract: A mechanism is provided to remove heat from an integrated circuit (IC) device die by directing heat through a waveguide to a heat sink. The waveguide is mounted on top of a package containing the IC device die. The waveguide is thermally coupled to the IC device die. The waveguide transports the heat to a heat sink coupled to the waveguide and located adjacent to the package on top of a printed circuit board on which the package is mounted. Embodiments provide both thermal dissipation of the generated heat while at the same time maintaining good radio frequency performance of the waveguide.

Abstract: A mechanism is provided to remove heat from an integrated circuit (IC) device die by directing heat through a waveguide to a heat sink. Embodiments provide the waveguide mounted on top of a package containing the IC device die. The waveguide is thermally coupled to the IC device die. The waveguide transports the heat to a heat sink coupled to the waveguide and located adjacent to the package on top of a printed circuit board on which the package is mounted. Embodiments provide both thermal dissipation of the generated heat while at the same time maintaining good radio frequency (RF) performance of the waveguide.