Abstract: A method for automatic detection of defects in TSV vias formed in a layer of semiconductor material, this detection taking place before stacking this layer with a plurality of other layers of semiconductor material for the design of a multilayer chip integrated circuit, comprising: measurement on each of said TSV vias of at least one parameter derived from an electrical characteristic of the TSV vias; detection of defects in said TSV vias according to a comparison of the parameters measured with at least one reference parameter, and calculation of said at least one reference parameter using the measured parameters. The parameter measured on each of the TSV vias comprises an oscillation frequency value derived from a capacitive characteristic of the TSV vias.