Abstract: A semiconductor light emitter device for emitting light having a photon energy, comprises a mechanical carrier made substantially of a material that is an absorbant of the light with the photon energy, and having a carrier bottom side and a carrier top side opposite to the carrier bottom side, a layer structure epitaxially deposited on the carrier bottom side of the mechanical carrier and comprising an active-layer stack with at least two semiconductor layers of opposite conductivity types, which is configured to emit light upon application of a voltage to the active-layer stack, and at least one opening in the mechanical carrier, the opening reaching from the carrier bottom side to the carrier top side and being arranged and shaped to allow a passage of light, which is emitted from the active-layer stack, through the opening in the mechanical carrier.

Abstract: A MOS transistor in a single-transistor memory cell having a locally thickened gate oxide, and a process for producing the transistor. The MOS transistor can be used as a selection transistor in a single-transistor memory cell having nitride spacers, or another spacer material acting as an oxidation barrier. The transistor also has a bird's beak in the gate oxide to reduce leakage currents. The MOS transistor can be used in a DRAM, particularly as a selection transistor.

Abstract: A method for fabricating a mask includes, inter alia, producing first spacers in between masking structures that have been produced beforehand. The masking structures are subsequently removed, while the first spacers remain. The remaining first spacers thus serve as a hard mask during the patterning of underlying layers during the fabrication of a semiconductor device. One advantage of this method is the reduction of feature sizes that can be fabricated. In one embodiment variant of the method, after the removal of the masking structures, second spacers are produced between the first spacers. This allows for the fabrication of the smallest possible periodic structures.

Abstract: A MOS transistor in a single-transistor memory cell having a locally thickened gate oxide, and a process for producing the transistor. The MOS transistor can be used as a selection transistor in a single-transistor memory cell having nitride spacers, or another spacer material acting as an oxidation barrier. The transistor also has a bird's beak in the gate oxide to reduce leakage currents. The MOS transistor can be used in a DRAM, particularly as a selection transistor.

Abstract: A MOS transistor in a single-transistor memory cell having a locally thickened gate oxide, and a process for producing the transistor. The MOS transistor can be used as a selection transistor in a single-transistor memory cell having nitride spacers, or another spacer material acting as an oxidation barrier. The transistor also has a bird's beak in the gate oxide to reduce leakage currents. The production process enables the bird's beak to be produced before the nitride spacers are produced. The MOS transistor can be used in a DRAM, particularly as a selection transistor.