Patents by Inventor Giorgos GEORGIOU

Giorgos GEORGIOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12206039
    Abstract: A photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain is provided. The transducer comprises a three-dimensional structure that includes, in this order, a first planar electrode, an array of nano-columns embedded in a layer of resist and a second planar electrode parallel to the first planar electrode. The design of the transducer increases the optical-to-terahertz conversion efficiency by means of photonic and plasmonic resonances and by means of high and homogeneous electric fields. The height of the nano-columns as well as the thickness of the resist range between 100 nanometres and 400 nanometres. The width of the nano-columns is between 100 nanometres and 400 nanometres, the distance between two adjacent nano-columns is between 300 nanometres and 500 nanometres, the nano-columns are made of a III-V semiconductor.
    Type: Grant
    Filed: December 10, 2020
    Date of Patent: January 21, 2025
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, INSTITUT POLYTECHNIQUE DE GRENOBLE, UNIVERSITE SAVOIE MONT BLANC, UNIVERSITE GRENOBLE ALPES
    Inventors: Christopher Bauerle, Jean-François Roux, Giorgos Georgiou
  • Publication number: 20230026900
    Abstract: A photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain is provided. The transducer comprises a three-dimensional structure that includes, in this order, a first planar electrode, an array of nano-columns embedded in a layer of resist and a second planar electrode parallel to the first planar electrode. The design of the transducer increases the optical-to-terahertz conversion efficiency by means of photonic and plasmonic resonances and by means of high and homogeneous electric fields. The height of the nano-columns as well as the thickness of the resist range between 100 nanometres and 400 nanometres. The width of the nano-columns is between 100 nanometres and 400 nanometres, the distance between two adjacent nano-columns is between 300 nanometres and 500 nanometres, the nano-columns are made of a III-V semiconductor.
    Type: Application
    Filed: December 10, 2020
    Publication date: January 26, 2023
    Inventors: Christopher BAUERLE, Jean-François ROUX, Giorgos GEORGIOU