Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.

Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.

Abstract: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.

Abstract: A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

Abstract: A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit over the bottom set of finger lines, wherein the metal paste B is printed in a grid pattern which comprises (i) thin parallel finger lines forming a top set of finger lines superimposing the bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.

Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.

Abstract: A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit over the bottom set of finger lines, wherein the metal paste B is printed in a grid pattern which comprises (i) thin parallel finger lines forming a top set of finger lines superimposing the bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

Abstract: A conductive metal paste having no or only poor fire-through capability and including (a) particulate silver, (b) at least one lead-free glass frit including 0.5 to 15 wt. % SiO2, 0.3 to 10 wt. % Al2O3 and 67 to 75 wt. % Bi2O3, wherein the weight percentages are based on the total weight of the glass frit, and (c) an organic vehicle, wherein the content of the particulate silver in the conductive metal paste is 60 to 92 wt.-%, based on total conductive metal paste composition, and wherein the conductive metal paste is free from zinc oxide and compounds capable of generating zinc oxide on firing.

Abstract: An aluminum paste having no or only poor fire-through capability and comprising particulate aluminum, an organic vehicle and at least one glass frit selected from the group consisting of lead-free glass frits containing 0.5 to 15 wt. % SiO2, 0.3 to 10 wt. % Al2O3 and 67 to 75 wt. % Bi2O3, and the use of such aluminum paste in the manufacture of aluminum back anodes of PERC silicon solar cells.

Abstract: A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit over the bottom set of finger lines, wherein the metal paste B is printed in a grid pattern which comprises (i) thin parallel finger lines forming a top set of finger lines superimposing the bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.

Abstract: A process for the production of a MWT silicon solar cell, wherein a conductive metal paste with no or only poor fire-through capability is applied, dried and fired to form a continuous metallization comprising a top set of conductive metal collector lines and a metallization of the inside of the holes of a p-type MWT silicon solar cell wafer, wherein the top set of conductive metal collector lines superimposes a bottom set of conductive metal collector lines on the front-side of the p-type MWT silicon solar cell wafer, said bottom set of conductive metal collector lines having no contact with the inside of the holes.

Abstract: A process for the production of a MWT silicon solar cell, wherein a conductive metal paste with no or only poor fire-through capability is applied, dried and fired to form a continuous metallization comprising a top set of conductive metal collector lines and a metallization of the inside of the holes of an n-type MWT silicon solar cell wafer, wherein the top set of conductive metal collector lines superimposes a bottom set of conductive metal collector lines on the front-side of the n-type MWT silicon solar cell wafer, said bottom set of conductive metal collector lines having no contact with the inside of the holes.

Abstract: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a p-type silicon wafer having on its front-side an n-type emitter with an ARC layer thereon and on its back-side a perforated dielectric passivation layer with local BSF contacts at the places of the perforations, (2) applying and drying a silver paste to form a silver back electrode pattern connecting the local BSF contacts on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

Abstract: A process of forming a front-grid electrode on a silicon wafer having an ARC layer wherein thin parallel fingers lines that form the front side grid electrode are double printed from a metal paste, and the metal pastes used for the first and second printing differ in their content of glass frit plus optionally present other inorganic additives.

Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.

Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.

Abstract: A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.