Abstract: The present disclosure relates to a precursor solution for the preparation of a ceramic of the BZT-?BXT type, where X is selected from Ca, Sn, Mn, and Nb, and ? is a molar fraction selected in the range between 0.10 and 0.90, said solution comprising: 1) at least one barium precursor compound; 2) a precursor compound selected from the group consisting of at least one calcium compound, at least one tin compound, at least one manganese compound, and at least one niobium compound; 3) at least one anhydrous precursor compound of zirconium; 4) at least one anhydrous precursor compound of titanium; 5) a solvent selected from the group consisting of a polyol and mixtures of a polyol and a secondary solvent selected from the group consisting of alcohols, carboxylic acids, esters, ketones, ethers, and mixtures thereof; and 6) a chelating agent, as well as method of using the same.

Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: The present disclosure relates to a precursor solution for the preparation of a ceramic of the BZT-?BXT type, where X is selected from Ca, Sn, Mn, and Nb, and ? is a molar fraction selected in the range between 0.10 and 0.90, said solution comprising: 1) at least one barium precursor compound; 2) a precursor compound selected from the group consisting of at least one calcium compound, at least one tin compound, at least one manganese compound, and at least one niobium compound; 3) at least one anhydrous precursor compound of zirconium; 4) at least one anhydrous precursor compound of titanium; 5) a solvent selected from the group consisting of a polyol and mixtures of a polyol and a secondary solvent selected from the group consisting of alcohols, carboxylic acids, ketones, and mixtures thereof; and 6) a chelating agent, as well as method of using the same.

Abstract: The present disclosure relates to a precursor solution for the preparation of a ceramic of the BZT-?BXT type, where X is selected from Ca, Sn, Mn, and Nb, and a is a molar fraction selected in the range between 0.10 and 0.90, said solution comprising: 1) at least one barium precursor compound; 2) a precursor compound selected from the group consisting of at least one calcium compound, at least one tin compound, at least one manganese compound, and at least one niobium compound; 3) at least one anhydrous precursor compound of zirconium; 4) at least one anhydrous precursor compound of titanium; 5) a solvent selected from the group consisting of a polyol and mixtures of a polyol and a secondary solvent selected from the group consisting of alcohols, carboxylic acids, esters, ketones, ethers, and mixtures thereof; and 6) a chelating agent, as well as method of using the same.

Abstract: The present disclosure relates to a sensor for detecting hydrogen ions in an aqueous solution comprising a support, a reference electrode, a working electrode and a counter electrode supported by said support, the reference electrode being made of a material comprising silver and silver chloride, the counter electrode being made of a conductive material. The working electrode comprises a substrate and a layer made of an inherently electrically conductive polymer of the polythiophene or polyaniline (PANI) or polypyrrole class.

Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.

Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: The present disclosure relates to a sensor for detecting hydrogen ions in an aqueous solution comprising a support, a reference electrode, a working electrode and a counter electrode supported by said support, the reference electrode being made of a material comprising silver and silver chloride, the counter electrode being made of a conductive material. The working electrode comprises a substrate and a layer made of an inherently electrically conductive polymer of the polythiophene or polyaniline (PANI) or polypyrrole class.

Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.

Abstract: A method realizes a thin film organic electronic device integrated on a substrate and includes an organic material layer and an organic thin film transistor or OTFT transistor. The method comprises: depositing the organic material layer on the substrate, the organic material layer being a conductive organic polymer; patterning by a soft-lithographic procedure the organic material layer to create a reduced portion in order to make a channel area of the OTFT transistor; masking the organic material layer by covering with a cover mask a source area and a drain area of the OTFT transistor; irradiating by ultraviolet radiation to deactivate exposed portions of the organic material layer defining the source area, the drain area and the channel area; depositing on the organic material layer a semiconductor layer; and creating on the semiconductor layer a gate area of the OTFT transistor.

Abstract: New, highly photoluminescent compounds are described having structural formula (I) wherein: R1, R2, R3, R4, independently from each other, represent H; alkyl, alkenyl; aryl; —(CH2CH2—O)n—CH3. These compounds are highly photoluminescent and have high quantum yield; they have optimal plasticity characteristics and optimal miscibility with other amorphous polymers; they lead to the formation of thin, stable and uniform layers of photoluminescent material, obtainable by simple techniques of deposition from solution. A simple and high yield process is described for obtaining the aforesaid compounds. In addition, the use of the compounds of formula (I) and their polymer derivatives is described in the preparation of electroluminescent devices, for example LEDs.

Abstract: A method realizes a thin film organic electronic device integrated on a substrate and includes an organic material layer and an organic thin film transistor or OTFT transistor. The method comprises: depositing the organic material layer on the substrate, the organic material layer being a conductive organic polymer; patterning by a soft-lithographic procedure the organic material layer to create a reduced portion in order to make a channel area of the OTFT transistor; masking the organic material layer by covering with a cover mask a source area and a drain area of the OTFT transistor; irradiating by ultraviolet radiation to deactivate exposed portions of the organic material layer defining the source area, the drain area and the channel area; depositing on the organic material layer a semiconductor layer; and creating on the semiconductor layer a gate area of the OTFT transistor.

Abstract: New, highly photoluminescent compounds are described having structural formula (I) wherein: R1, R2, R3, R4, independently from each other, represent H; alkyl, alkenyl; aryl; —(CH2CH2—O)n—CH3. These compounds are highly photoluminescent and have high quantum yield; they have optimal plasticity characteristics and optimal miscibility with other amorphous polymers; they lead to the formation of thin, stable and uniform layers of photoluminescent material, obtainable by simple techniques of deposition from solution. A simple and high yield process is described for obtaining the aforesaid compounds. In addition, the use of the compounds of formula (I) and their polymer derivatives is described in the preparation of electroluminescent devices, for example LEDs.