Patents by Inventor Giovanni A. Salvatore
Giovanni A. Salvatore has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240063080Abstract: A semiconductor power module comprises a metal substrate structure with a metal top layer, a metal bottom layer, and a dielectric layer in between. A housing with a top wall and side walls is coupled to the metal substrate structure. With respect to a stacking direction, there is a predetermined distance between a lower surface of the top wall and an upper surface of the metal top layer adjacent to the side walls. At least one terminal is arranged inside the housing, and is coupled to the lower surface of the top wall and to the upper surface of the metal top layer. With respect to the stacking direction, a length of the terminal is configured in coordination with the distance, such that due to the terminal, the metal substrate structure is bent in a predetermined manner and comprises a convex shape in interaction with the housing and the terminal.Type: ApplicationFiled: April 28, 2022Publication date: February 22, 2024Inventors: David GUILLON, Martin BAYER, Andreas ROESCH, Giovanni SALVATORE, Fabian FISCHER
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Publication number: 20240030101Abstract: A power module includes a power semiconductor module having a semiconductor chip arranged on a substrate. A lead frame is arranged in electrical contact with the semiconductor chip. Abase plate includes cooling structures and micro channels that are connected to an inlet port and an outlet port. A bond layer connects the power semiconductor module and the base plate. A mold compound is arranged on the power semiconductor module, the bond layer and the base plate. The bond layer is encapsulated completely by the power semiconductor module, the base plate and the mold compound and the lead frame is arranged at least partially within the mold compound.Type: ApplicationFiled: September 16, 2021Publication date: January 25, 2024Inventors: Niko Pavlicek, Didier Cottet, Thomas Gradinger, Chunlei Liu, Fabian Mohn, Giovanni Salvatore, Juergen Schuderer, Daniele Torresin, Felix Traub
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Publication number: 20230335472Abstract: The invention relates to a power semiconductor module comprising a conductive base, a conductive top, and at least two power semiconductor devices arranged between the conductive base and the conductive top. The semiconductor devices are each configured for a current of at least 1 A and/or for a voltage of at least 50 V. An insulating spacer layer is arranged on the power semiconductor devices and at least partially between the conductive base and the conductive top. At least two vertical connection elements pass from the power semiconductor devices through the spacer layer and conductively connect the conductive top with the power semiconductor devices. The spacer layer and the vertical connection elements are configured for compensating height differences of the power semiconductor devices.Type: ApplicationFiled: September 23, 2021Publication date: October 19, 2023Inventors: Juergen SCHUDERER, Chunlei LIU, Slavo KICIN, Giovanni SALVATORE, Fabian MOHN
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Patent number: 11652091Abstract: A solid state switching device, such as a solid state circuit breaker, includes at least one heat sink, a control electronics printed circuit board (PCB), and power electronics. The power electronics are useful to regulate the flow of current from one terminal of the solid state switching device to another terminal. The power electronics can include one or more solid state devices such as FETs, Thyristors, Thyristors+SiC JFET in parallel, IGBTs, and IGCTs. The control PCB can include a variety of circuit elements useful to perform the function of a gate driver useful to activate the solid state device of the power electronics. The heat sink includes one or more signal vias formed therethrough to permit nesting of the control PCB within the heat sink.Type: GrantFiled: June 19, 2020Date of Patent: May 16, 2023Assignee: ABB Schweiz AGInventors: Giovanni Salvatore, Slavo Kicin
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Publication number: 20220249745Abstract: Engineered biodegradable vascular bioprostheses include a polymeric construct containing a mixture of two polymers, poly (caprolactone) (PCL) and poly (glycerol sebacate) (PGS), which is functionalized with antioxidant bioactive molecules (biomolecules) that cause a modulation of the inflammation. The process for obtaining such engineered biodegradable vascular bioprostheses includes the preparation of a polymer solution by solubilizing the two polymers in mixtures of organic solvents, electrospinning the polymer solution, and bioengineering the prostheses.Type: ApplicationFiled: August 20, 2020Publication date: August 11, 2022Inventors: Patrizia Perego, Domenico Palombo, Pier Francesco Ferrari, Bahar Aliakbarian, Bianca Pane, Giovanni Salvatore Giuseppe Spinella
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Publication number: 20220166423Abstract: Systems, methods, techniques and apparatuses of power switches are disclosed. One exemplary embodiment is a power switch comprising an outer housing; a power electronics board disposed within the housing and including a semiconductor switch structured to selectively conduct a current between a first power terminal and a second power terminal; a first heat sink coupled to the power electronics board; a plurality of thermally conductive connectors; a second heat sink coupled to the plurality of thermally conductive connectors, a control electronics board structured to control the semiconductor switch, the control electronics board being located within an enclosure formed of the second heat sink, the plurality of thermally conductive connectors, and the power electronics board.Type: ApplicationFiled: November 23, 2020Publication date: May 26, 2022Inventors: Giovanni Salvatore, Slavo Kicin, Fabian Mohn
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Patent number: 11343943Abstract: Systems, methods, techniques and apparatuses of power switches are disclosed. One exemplary embodiment is a power switch comprising an outer housing; a power electronics board disposed within the housing and including a semiconductor switch structured to selectively conduct a current between a first power terminal and a second power terminal; a first heat sink coupled to the power electronics board; a plurality of thermally conductive connectors; a second heat sink coupled to the plurality of thermally conductive connectors, a control electronics board structured to control the semiconductor switch, the control electronics board being located within an enclosure formed of the second heat sink, the plurality of thermally conductive connectors, and the power electronics board.Type: GrantFiled: November 23, 2020Date of Patent: May 24, 2022Assignee: ABB SCHWEIZ AGInventors: Giovanni Salvatore, Slavo Kicin, Fabian Mohn
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Publication number: 20210400815Abstract: A solid state switching device, such as a solid state circuit breaker, includes at least one heat sink, a control electronics printed circuit board (PCB), and power electronics. The power electronics are useful to regulate the flow of current from one terminal of the solid state switching device to another terminal. The power electronics can include one or more solid state devices such as FETs, Thyristors, Thyristors+SiC JFET in parallel, IGBTs, and IGCTs. The control PCB can include a variety of circuit elements useful to perform the function of a gate driver useful to activate the solid state device of the power electronics. The control electronics can be positioned laterally to the power electronics and spanning from a heat sink positioned on one side of the power electronics to a heat sink positioned on an opposing side of the power electronics.Type: ApplicationFiled: June 19, 2020Publication date: December 23, 2021Inventors: Giovanni Salvatore, Slavo Kicin
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Publication number: 20210398958Abstract: A solid state switching device, such as a solid state circuit breaker, includes at least one heat sink, a control electronics printed circuit board (PCB), and power electronics. The power electronics are useful to regulate the flow of current from one terminal of the solid state switching device to another terminal. The power electronics can include one or more solid state devices such as FETs, Thyristors, Thyristors+SiC JFET in parallel, IGBTs, and IGCTs. The control PCB can include a variety of circuit elements useful to perform the function of a gate driver useful to activate the solid state device of the power electronics. The heat sink includes one or more signal vias formed therethrough to permit nesting of the control PCB within the heat sink.Type: ApplicationFiled: June 19, 2020Publication date: December 23, 2021Inventors: Giovanni Salvatore, Slavo Kicin
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Patent number: 8603381Abstract: In a method for imprinting a layer of material, a nanotemplate is impressed into a material layer, and the nanotemplate is maintained impressed in the material layer until a geometric trench corresponding to geometry of the nanotemplate is formed in the layer, and the nanotemplate is then removed from the material layer. A nanotemplate geometric trench is repeatedly formed in the material layer by nanotemplate impressions in the layer, until a final desired imprint pattern is produced in the layer. Each nanotemplate geometric trench is characterized by an extent that is a fraction of an extent of the final desired imprint pattern. The material layer is maintained in a condition for accepting nanotemplate impressions continuously throughout the nanotemplate impression repetition.Type: GrantFiled: October 3, 2006Date of Patent: December 10, 2013Assignee: Massachusetts Insitute of TechnologyInventors: Karl K. Berggren, Stefan Harrer, Giovanni A. Salvatore, Joel K. Yang
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Publication number: 20100078854Abstract: In a method for imprinting a layer of material, a nanotemplate is impressed into a material layer, and the nanotemplate is maintained impressed in the material layer until a geometric trench corresponding to geometry of the nanotemplate is formed in the layer, and the nanotemplate is then removed from the material layer. A nanotemplate geometric trench is repeatedly formed in the material layer by nanotemplate impressions in the layer, until a final desired imprint pattern is produced in the layer. Each nanotemplate geometric trench is characterized by an extent that is a fraction of an extent of the final desired imprint pattern. The material layer is maintained in a condition for accepting nanotemplate impressions continuously throughout the nanotemplate impression repetition.Type: ApplicationFiled: October 3, 2006Publication date: April 1, 2010Applicant: Massachusetts Institute of TechnologyInventors: Karl K. Berggren, Stefan Harrer, Giovanni A. Salvatore, Joel K. Yang