Abstract: In one embodiment, a method includes forming a plurality of thermocouples coupled in series by forming first metal segments comprising a first metal, each of the first metal segments having a L-shape. The method further includes forming a plurality of deep openings to expose a first contact region of each of the first metal segments, and forming a plurality of shallow openings to expose a second contact region of each of the first metal segments. The method further includes forming second metal segments comprising a second metal over the dielectric layer. The second metal is a different type of metal than the first metal. Each of the second metal segments contacts one of the first contact region of the first metal segments through one of the plurality of deep openings and contacts one of the second contact region of the first metal segments through one of the plurality of shallow openings. The plurality of thermocouples is formed within a building component.

Abstract: In one embodiment, a method includes forming a plurality of thermocouples coupled in series by forming first metal segments comprising a first metal, each of the first metal segments having a L-shape. The method further includes forming a plurality of deep openings to expose a first contact region of each of the first metal segments, and forming a plurality of shallow openings to expose a second contact region of each of the first metal segments. The method further includes forming second metal segments comprising a second metal over the dielectric layer. The second metal is a different type of metal than the first metal. Each of the second metal segments contacts one of the first contact region of the first metal segments through one of the plurality of deep openings and contacts one of the second contact region of the first metal segments through one of the plurality of shallow openings. The plurality of thermocouples is formed within a building component.

Abstract: An embodiment of a process for realizing a system for recovering heat is described, the process comprising the steps of: formation on a substrate of a plurality of L-shaped down metal structures; deposition of a dielectric layer on the substrate and the plurality of L-shaped down metal structures by using a screen printing approach; definition and opening in the dielectric layer of upper contacts and lower contacts of the L-shaped down metal structures; formation of a plurality of L-shaped up metal structures being connected to the plurality of L-shaped down metal structure in correspondence of the upper and lower contacts so as to form a plurality of serially connected thermocouples, each comprising at least one L-shaped down metal structure and at least one L-shaped up metal structure, being made of different metal materials and interconnected at a junction, the serially connected thermocouples thus realizing the system for recovering heat.

Abstract: An embodiment of a process for realizing a system for recovering heat is described, the process comprising the steps of: formation on a substrate of a plurality of L-shaped down metal structures; deposition of a dielectric layer on the substrate and the plurality of L-shaped down metal structures by using a screen printing approach; definition and opening in the dielectric layer of upper contacts and lower contacts of the L-shaped down metal structures; formation of a plurality of L-shaped up metal structures being connected to the plurality of L-shaped down metal structure in correspondence of the upper and lower contacts so as to form a plurality of serially connected thermocouples, each comprising at least one L-shaped down metal structure and at least one L-shaped up metal structure, being made of different metal materials and interconnected at a junction, the serially connected thermocouples thus realizing the system for recovering heat.

Abstract: An embodiment of a process for realizing a system for recovering heat is described, the process comprising the steps of: formation on a substrate of a plurality of L-shaped down metal structures; deposition of a dielectric layer on the substrate and the plurality of L-shaped down metal structures by using a screen printing approach; definition and opening in the dielectric layer of upper contacts and lower contacts of the L-shaped down metal structures; formation of a plurality of L-shaped up metal structures being connected to the plurality of L-shaped down metal structure in correspondence of the upper and lower contacts so as to form a plurality of serially connected thermocouples, each comprising at least one L-shaped down metal structure and at least one L-shaped up metal structure, being made of different metal materials and interconnected at a junction, the serially connected thermocouples thus realizing the system for recovering heat.

Abstract: A method for manufacturing a HEMT transistor includes: realizing an undoped epitaxial layer on a substrate; realizing a barrier epitaxial layer on the undoped epitaxial layer so as to form a heterojunction; realizing source and drain structures, separated from one other, on the barrier epitaxial layer; depositing an insulating layer on the barrier epitaxial layer and on the source and drain structures; and photolithographic defining the insulating layer, defining first and second insulating portions in correspondence of the source and drain structures, respectively, and exposing a portion of the barrier epitaxial layer. The method further comprises: forming first and second spacers lying at the corners of the first and second insulating portions; and depositing a gate metal structure at least partially covering said first and second insulating portions, and said first and second spacers, said gate metal structure being a field plate of the HEMT transistor.

Abstract: A method for manufacturing a HEMT transistor includes: realizing an undoped epitaxial layer on a substrate; realizing a barrier epitaxial layer on the undoped epitaxial layer so as to form a heterojunction; realizing source and drain structures, separated from one other, on the barrier epitaxial layer; depositing an insulating layer on the barrier epitaxial layer and on the source and drain structures; and photolithographic defining the insulating layer, defining first and second insulating portions in correspondence of the source and drain structures, respectively, and exposing a portion of the barrier epitaxial layer. The method further comprises: forming first and second spacers lying at the corners of the first and second insulating portions; and depositing a gate metal structure at least partially covering said first and second insulating portions, and said first and second spacers, said gate metal structure being a field plate of the HEMT transistor.

Abstract: An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially grown on a substrate. The homo-epitaxial growth is preceded by growing, on the first epitaxial layer, a second epitaxial layer having a second doping level higher than the first doping level. Finally, the second epitaxial layer is oxidized so as to be totally removed. Thereby, a silicon oxide layer of high quality is formed, and the interface between the second epitaxial layer and silicon oxide has a low trap density.

Abstract: An embodiment of a process for realizing a system for recovering heat is described, the process comprising the steps of: formation on a substrate of a plurality of L-shaped down metal structures; deposition of a dielectric layer on the substrate and the plurality of L-shaped down metal structures by using a screen printing approach; definition and opening in the dielectric layer of upper contacts and lower contacts of the L-shaped down metal structures; formation of a plurality of L-shaped up metal structures being connected to the plurality of L-shaped down metal structure in correspondence of the upper and lower contacts so as to form a plurality of serially connected thermocouples, each comprising at least one L-shaped down metal structure and at least one L-shaped up metal structure, being made of different metal materials and interconnected at a junction, the serially connected thermocouples thus realizing the system for recovering heat.

Abstract: An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially grown on a substrate. The homo-epitaxial growth is preceded by growing, on the first epitaxial layer, a second epitaxial layer having a second doping level higher than the first doping level. Finally, the second epitaxial layer is oxidized so as to be totally removed. Thereby, a silicon oxide layer of high quality is formed, and the interface between the second epitaxial layer and silicon oxide has a low trap density.

Abstract: An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially grown on a substrate. The homo-epitaxial growth is preceded by growing, on the first epitaxial layer, a second epitaxial layer having a second doping level higher than the first doping level. Finally, the second epitaxial layer is oxidized so as to be totally removed. Thereby, a silicon oxide layer of high quality is formed, and the interface between the second epitaxial layer and silicon oxide has a low trap density.

Abstract: An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially grown on a substrate. The homo-epitaxial growth is preceded by growing, on the first epitaxial layer, a second epitaxial layer having a second doping level higher than the first doping level. Finally, the second epitaxial layer is oxidized so as to be totally removed. Thereby, a silicon oxide layer of high quality is formed, and the interface between the second epitaxial layer and silicon oxide has a low trap density.