Abstract: Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 &mgr;m ICs, or when copper is used as conductor in future ICs.

Abstract: Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 &mgr;m ICs, or when copper is used as conductor in future ICs.

Abstract: Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp2C—F and some hyperconjugated sp3C—F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.

Abstract: New starting materials and methods are used to make materials with low dielectric constant through the processes of transport polymerization or chemical vapor deposition. The starting materials and precursors are designed to provide polymers with combined low dielectric constant, high thermal stability and high mechanical strength.

Abstract: Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp2C—F and some hyperconjugated sp3C—F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.

Abstract: Fluorinated chemical precursors, methods of manufacture, polymer thin filmswith low dielectric constants, and integrated circuits comprising primarily of sp2C—F and some hyperconjugated sp3C—F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.

Abstract: New starting materials and chemical processes will be used to make fluorinated poly(para-xylylenes) (F-PPX) and fluorinated poly(para-fluoroxylylenes) (F-PPFX). The processes will use some very low cost and readily available starting materials, catalysts, chemical reactors, transport polymerization (TP) systems, and chemical vapor deposition (CVD) systems commonly used for making F-PPX. New TP and CVD deposition systems will also be used to make F-PPX and F-PPFX. These polymers are used for the manufacture of low dielectric films with high thermal stability and are sufficiently strong to withstand planarization and polishing for the manufacture of integrated circuits.

Abstract: This invention relates to the design of apparatus for processing electronic devices, including equipment for chemical vapor deposition or transport polymerization. The new designs of gas separator plates, their configuration, and the regulation of gas flows through the system provides control over the pattern of precursor gas flow away from the separation plates, thereby decreasing the amount of byproducts that are deposited on the plates and throughout the reactor. New designs for shaping other surfaces of the dispersion head reduces contamination of those elements, and new designs for chamber panels decrease the deposition of byproducts on those surfaces, as well as other elements of the reactor. Decreasing deposition of byproducts increases the amount and the quality of the film that can be deposited without requiring the system to be shut down for cleaning.

Abstract: The described deposition systems are designed to accommodate new precursors and chemical processes used for transport polymerization and chemical vapor deposition. The systems consist primarily of a reactor, a liquid injector or gas mass flow controller, a cracker and a deposition chamber under sub-atmospheres pressure. The cracker utilizes one or more types of energy, including heat, photons, and plasmas. This invention is especially useful for preparing F-PPX (fluorinated poly(para-xylylenes) and other fluorinated polymer thin films for intermetal dielectric (IMD) and interlevel dielectric (ILD) applications in the manufacture of integrated circuits with features <0.25 .mu.m in size.

Abstract: This invention relates to the design of apparatus for processing electronic devices, including equipment for chemical vapor deposition. The new designs of gas separator plates, their configuration, and the regulation of gas flows through the system provides control over the pattern of precursor gas flow away from the separation plates, thereby decreasing the amount of byproducts that are deposited on the plates and throughout the reactor. New designs for shaping other surfaces of the dispersion head reduces contamination of those elements, and new designs for chamber panels decrease the deposition of byproducts on those surfaces, as well as other elements of the reactor. Decreasing deposition of byproducts increases the amount of thin film, and the quality of the film which can be deposited without requiring the system to be shut down. This increases the throughput of products in the deposition process, thereby increasing the efficiency of electronic device manufacture and lowering the cost.

Abstract: Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 .mu.m ICs, or when copper is used as conductor in future ICs.

Abstract: Ultraviolet and vacuum ultraviolet radiators for use in the manufacture of semiconductors are provided which have improved lifetimes, improved distribution of radiation generation, improved distribution of emitted radiation, increased efficiency of radiation emission, and improved means for cooling. The radiators have novel electrodes, novel electrode configurations, novel means for distributing plasmas between electrodes, and have novel cooling means. These features enable the miniaturization of the radiators permitting high-intensity and uniform radiation exposure of planar surfaces. The radiators are used in the pre-treatment of semiconductor surfaces, the deposition of semiconductor thin films, and the post-deposition processing of semiconductor thin films.

Abstract: Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp.sup.2 C-F and some hyperconjugated sp.sup.3 C-F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.

Abstract: Deposition rates of undoped silicate glass dielectric layers on thermal oxide are increased by pre-treating the thermal oxide layer with electromagnetic radiation in the ultraviolet (UV) and/or vacuum ultraviolet (VUV) wavelengths. The surface smoothness of the resulting films are also increased by pre-treating films with UV and/or VUV radiation. Furthermore, the gap filling abilities of the undoped silicate glass films are increased by pre-treating the thermal oxide with UV and/or VUV radiation. New equipment and methods are presented for exposing semiconductor devices to UV and/or VUV radiation, and for enhancing the deposition rates and film quality for semiconductor manufacture. Semiconductor devices incorporating the new methods are also described.