Patents by Inventor Giovanni FINOCCHIO

Giovanni FINOCCHIO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11127446
    Abstract: Embodiments of a Stochastic memristive array (SMA) device based on arrays of voltage-controlled magnetic tunnel junctions (MTJs) are disclosed. The SMA device is based on an array of stochastic (low energy barrier) magnetic tunnel junctions that are connected in parallel which simultaneously exhibits features that include (i) stochasticity and (ii) memristive behavior. The energy barrier of the MJTs may be tuned by an applied voltage (electric field). SMA devices may find applications in emerging computing concepts such as probabilistic computing and memcomputing, among others, providing a pathway towards intelligent hybrid CMOS-spintronic systems.
    Type: Grant
    Filed: July 2, 2020
    Date of Patent: September 21, 2021
    Assignee: NORTHWESTERN UNIVERSITY
    Inventors: Pedram Khalili Amiri, Giovanni Finocchio
  • Publication number: 20210005236
    Abstract: Embodiments of a Stochastic memristive array (SMA) device based on arrays of voltage-controlled magnetic tunnel junctions (MTJs) are disclosed. The SMA device is based on an array of stochastic (low energy barrier) magnetic tunnel junctions that are connected in parallel which simultaneously exhibits features that include (i) stochasticity and (ii) memristive behavior. The energy barrier of the MJTs may be tuned by an applied voltage (electric field). SMA devices may find applications in emerging computing concepts such as probabilistic computing and memcomputing, among others, providing a pathway towards intelligent hybrid CMOS-spintronic systems.
    Type: Application
    Filed: July 2, 2020
    Publication date: January 7, 2021
    Inventors: Pedram Khalili Amiri, Giovanni Finocchio
  • Publication number: 20200251934
    Abstract: A new RF/microwave energy harvesting device based on spintronics is provided. The device comprises at least one RF/microwave energy conversion element comprising a first magnetic layer connected to a RF/microwave signal receiving element; a non-magnetic space layer; and an energy conversion layer accumulating positive and negative charges at both of upper and lower ends of the RF/microwave energy conversion element to implement a conversion of a RF/microwave energy into a direct voltage signal. Compared with the prior art, the device has advantages such as a simple structure, a small size, a wide operating frequency and the like.
    Type: Application
    Filed: March 24, 2017
    Publication date: August 6, 2020
    Applicant: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS(SINANO) CHINESE ACADEMY OF SCIENCES
    Inventors: Zhongming ZENG, Giovanni FINOCCHIO, Bin FANG, Jialin CAI, Wei TANG, Xin LUO, Rongxin XIONG, Baoshun ZHANG