Patents by Inventor Girish A. Dixit

Girish A. Dixit has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12080562
    Abstract: A method for selectively etching a stack with respect to a mask is provided. An atomic layer etch is provided to at least partially etch the stack, wherein the atomic layer etch forms at least some residue. An ion beam is provided to etch the stack, wherein the ion beam etch removes at least some of the residue from the atomic layer etch.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: September 3, 2024
    Assignee: Lam Research Corporation
    Inventors: Samantha Siamhwa Tan, Tamal Mukherjee, Wenbing Yang, Girish Dixit, Yang Pan
  • Publication number: 20220254649
    Abstract: A method for selectively etching a stack with respect to a mask is provided. An atomic layer etch is provided to at least partially etch the stack, wherein the atomic layer etch forms at least some residue. An ion beam is provided to etch the stack, wherein the ion beam etch removes at least some of the residue from the atomic layer etch.
    Type: Application
    Filed: September 9, 2020
    Publication date: August 11, 2022
    Inventors: Samantha SiamHwa TAN, Tamal MUKHERJEE, Wenbing YANG, Girish DIXIT, Yang PAN
  • Publication number: 20220004103
    Abstract: In some examples, a method of processing a substrate comprises applying a photoresist (PR) onto a surface of the substrate, pre-exposing the PR to ultra violet (UV) light before depositing or etching a metal oxide (MO) layer onto the PR, and depositing or etching a MO layer onto the PR subsequent to pre-exposing the PR to UV light.
    Type: Application
    Filed: November 15, 2019
    Publication date: January 6, 2022
    Inventors: Akhil N. Singhal, Bart Jan van Schravendijk, Girish A. DIXIT, David C. SMITH, Siva Krishnan Kanakasabapathy
  • Patent number: 10192742
    Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: January 29, 2019
    Assignee: Novellus Systems, Inc.
    Inventors: Frank L. Pasquale, Shankar Swaminathan, Adrien LaVoie, Nader Shamma, Girish A. Dixit
  • Publication number: 20180158683
    Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.
    Type: Application
    Filed: January 18, 2018
    Publication date: June 7, 2018
    Applicant: Novellus Systems, Inc.
    Inventors: Frank L. Pasquale, Shankar Swaminathan, Adrien LaVoie, Nader Shamma, Girish A. Dixit
  • Patent number: 9905423
    Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: February 27, 2018
    Assignee: Novellus Systems, Inc.
    Inventors: Frank L. Pasquale, Shankar Swaminathan, Adrien LaVoie, Nader Shamma, Girish A. Dixit
  • Publication number: 20160293418
    Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.
    Type: Application
    Filed: June 8, 2016
    Publication date: October 6, 2016
    Inventors: Frank L. Pasquale, Shankar Swaminathan, Adrien LaVoie, Nader Shamma, Girish A. Dixit
  • Patent number: 9390909
    Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: July 12, 2016
    Assignee: Novellus Systems, Inc.
    Inventors: Frank L. Pasquale, Shankar Swaminathan, Adrien LaVoie, Nader Shamma, Girish Dixit
  • Patent number: 9227958
    Abstract: An amorphous form of aprepitant and a process for its preparation is provided. Also provided are mixtures of polymorph Forms I and II of aprepitant and a process for the preparation thereof.
    Type: Grant
    Filed: February 2, 2007
    Date of Patent: January 5, 2016
    Assignee: Glenmark Pharmaceuticals Limited
    Inventors: Mangesh Shivram Sawant, Girish Dixit, Nitin Sharad Chandra Pradhan, Mubeen Ahmad Khan, Sukumar Sinha
  • Publication number: 20150126042
    Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.
    Type: Application
    Filed: February 28, 2014
    Publication date: May 7, 2015
    Inventors: Frank L. Pasquale, Shankar Swaminathan, Adrien LaVoie, Nader Shamma, Girish Dixit
  • Patent number: 9006443
    Abstract: Disclosed herein is an improved, commercially viable and industrially advantageous process for the preparation of quinoline-3-carboxamide derivatives such as laquinimod, or a pharmaceutically acceptable salt thereof, in high yield and purity.
    Type: Grant
    Filed: September 9, 2013
    Date of Patent: April 14, 2015
    Assignee: Actavis Group PTC ehf
    Inventors: Girish Dixit, Krishnadatt Sharma, Kundan Singh Shekhawat, Nitin Sharadchandra Pradhan, Jon Valgeirsson
  • Patent number: 8858763
    Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.
    Type: Grant
    Filed: February 24, 2009
    Date of Patent: October 14, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Erich R. Klawuhn, Robert Rozbicki, Girish A. Dixit
  • Publication number: 20140005401
    Abstract: Disclosed herein is an improved, commercially viable and industrially advantageous process for the preparation of quinoline-3-carboxamide derivatives such as laquinimod, or a pharmaceutically acceptable salt thereof, in high yield and purity.
    Type: Application
    Filed: September 9, 2013
    Publication date: January 2, 2014
    Applicant: ACTAVIS GROUP PTC EHF
    Inventors: Girish Dixit, Krishnadatt Sharma, Kundan Singh Shekhawat, Nitin Sharadchandra Pradhan, Jon Valgeirsson
  • Patent number: 8552194
    Abstract: Disclosed herein is an improved, commercially viable and industrially advantageous process for the preparation of quinoline-3-carboxamide derivatives such as laquinimod, or a pharmaceutically acceptable salt thereof, in high yield and purity.
    Type: Grant
    Filed: April 27, 2009
    Date of Patent: October 8, 2013
    Assignee: Actavis Group PTC EHF
    Inventors: Girish Dixit, Krishnadatt Sharma, Kundan Singh Shekhawat, Nitin Sharadchandra Pradhan, Jon Valgeirsson
  • Patent number: 8354428
    Abstract: Provided herein is a novel crystalline form of laquinimod, process for the preparation, pharmaceutical compositions, and method of treating thereof. Provided also herein are novel amorphous and polymorphic forms of laquinimod sodium, process for the preparation, pharmaceutical compositions, and method of treating thereof.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: January 15, 2013
    Assignee: Actavis Group PTC EHF
    Inventors: Girish Dixit, Krishnadatt Sharma, Nitin Sharadchandra Pradhan, Jon Valgeirsson
  • Patent number: 8342119
    Abstract: The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: January 1, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Joseph Yudovsky, Lawrence C. Lei, Salvador Umotoy, Tom Madar, Girish Dixit, Gwo-Chuan Tzu
  • Patent number: 8314235
    Abstract: Provided herein is an improved, convenient, commercially viable and environmentally friendly process for the preparation of varenicline or a pharmaceutically acceptable salt thereof comprising reacting 1-(4,5-diamino-10-aza-tricyclo[6.3.1.02 7]dodeca-2(7),3,5-trien-10-yl)-2,2,2-trifluoro-ethanone with chloroacetaldehyde in the presence of an oxygen source. Provided further herein is an improved and industrially advantageous process for the preparation of 1-(4,5-diamino-10-aza-tricyclo[6.3.1.02 7]dodeca-2(7),3,5-trien-10-yl)-2,2,2-trifluoro-ethanone.
    Type: Grant
    Filed: August 31, 2009
    Date of Patent: November 20, 2012
    Assignee: Actavis Group PTC EHF
    Inventors: Girish Dixit, Krishnadatt Sharma, Kundan Singh Shekhawat, Nitin Sharadchandra Pradhan
  • Patent number: 8268722
    Abstract: Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH3, H2, N2, and mixtures thereof. A dielectric diffusion barrier layer is then deposited.
    Type: Grant
    Filed: January 15, 2010
    Date of Patent: September 18, 2012
    Assignee: Novellus Systems, Inc.
    Inventors: Jengyi Yu, Hui-Jung Wu, Girish Dixit, Bart van Schravendijk, Pramod Subramonium, Gengwei Jiang, George Andrew Antonelli, Jennifer O'loughlin
  • Publication number: 20120164188
    Abstract: Provided herein are impurities of paliperidone, 3-[2-[4-[1-(4-fluoro-2-hydroxyphenyl)methanoyl]piperidinyl-1-yl]ethyl]-2-methyl-6,7,8,9-tetrahydro-4H-pyrido[1,2-a]pyrimidin-4-one (methanoyl impurity), 3-[2-[4-(6-fluoro-1,2-benzisoxazol-3-yl)-1-piperidinyl]ethyl]-2-methyl-4H-pyrido[1,2-a]pyrimidin-4-one (dehydroxy impurity) and 3-[2-[4-(6-fluoro-1,2-benzisoxazol-3-yl)-1-piperidinyl]ethyl]-2-methyl-7,8-dihydro-6H-pyrido[1,2-a]pyrimidin-4,9-dione (9-keto impurity), and processes for preparing and isolating thereof. Provided further herein is a highly pure paliperidone or a pharmaceutically acceptable salt thereof substantially free of methanoyl, dehydroxy and 9-keto impurities, process for the preparation thereof, and pharmaceutical compositions comprising highly pure paliperidone or a pharmaceutically acceptable salt thereof substantially free of methanoyl, dehydroxy and 9-keto impurities. Provided also herein are improved and efficient processes for preparing paliperidone intermediates.
    Type: Application
    Filed: September 10, 2010
    Publication date: June 28, 2012
    Applicant: ACTAVIS GROUP PTC EHF
    Inventors: Girish Dixit, Anil Shahaji Khile, Jayesh Laljibhai Patel, Nitin Sharadchandra Pradhan
  • Publication number: 20120100188
    Abstract: Provided herein are solid state forms of paliperidone salts, processes for preparation, pharmaceutical compositions, and method of treating thereof. Paliperidone is represented by the following structural formula (I): More particularly, provided are solid state forms of paliperidone acid addition salts, wherein the acid counter ion is provided by an acid selected from the group consisting of L-(+)-tartaric acid, p-toluenesulfonic acid, maleic acid, oxalic acid, fumaric acid, acetic acid and malic acid. Provided also herein is a process for preparing substantially pure paliperidone free base using the solid state forms of paliperidone salts.
    Type: Application
    Filed: May 25, 2010
    Publication date: April 26, 2012
    Applicant: Actavis Group PTC ehf
    Inventors: Girish Dixit, Anil Shahaji Khile, Vignesh Nair, Nitin Sharadechandra Pradhan