Abstract: A method for selectively etching a stack with respect to a mask is provided. An atomic layer etch is provided to at least partially etch the stack, wherein the atomic layer etch forms at least some residue. An ion beam is provided to etch the stack, wherein the ion beam etch removes at least some of the residue from the atomic layer etch.

Abstract: In some examples, a method of processing a substrate comprises applying a photoresist (PR) onto a surface of the substrate, pre-exposing the PR to ultra violet (UV) light before depositing or etching a metal oxide (MO) layer onto the PR, and depositing or etching a MO layer onto the PR subsequent to pre-exposing the PR to UV light.

Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

Abstract: An amorphous form of aprepitant and a process for its preparation is provided. Also provided are mixtures of polymorph Forms I and II of aprepitant and a process for the preparation thereof.

Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

Abstract: Disclosed herein is an improved, commercially viable and industrially advantageous process for the preparation of quinoline-3-carboxamide derivatives such as laquinimod, or a pharmaceutically acceptable salt thereof, in high yield and purity.

Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.

Abstract: Disclosed herein is an improved, commercially viable and industrially advantageous process for the preparation of quinoline-3-carboxamide derivatives such as laquinimod, or a pharmaceutically acceptable salt thereof, in high yield and purity.

Abstract: Disclosed herein is an improved, commercially viable and industrially advantageous process for the preparation of quinoline-3-carboxamide derivatives such as laquinimod, or a pharmaceutically acceptable salt thereof, in high yield and purity.

Abstract: Provided herein is a novel crystalline form of laquinimod, process for the preparation, pharmaceutical compositions, and method of treating thereof. Provided also herein are novel amorphous and polymorphic forms of laquinimod sodium, process for the preparation, pharmaceutical compositions, and method of treating thereof.

Abstract: The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

Abstract: Provided herein is an improved, convenient, commercially viable and environmentally friendly process for the preparation of varenicline or a pharmaceutically acceptable salt thereof comprising reacting 1-(4,5-diamino-10-aza-tricyclo[6.3.1.02 7]dodeca-2(7),3,5-trien-10-yl)-2,2,2-trifluoro-ethanone with chloroacetaldehyde in the presence of an oxygen source. Provided further herein is an improved and industrially advantageous process for the preparation of 1-(4,5-diamino-10-aza-tricyclo[6.3.1.02 7]dodeca-2(7),3,5-trien-10-yl)-2,2,2-trifluoro-ethanone.

Abstract: Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH3, H2, N2, and mixtures thereof. A dielectric diffusion barrier layer is then deposited.

Abstract: Provided herein are impurities of paliperidone, 3-[2-[4-[1-(4-fluoro-2-hydroxyphenyl)methanoyl]piperidinyl-1-yl]ethyl]-2-methyl-6,7,8,9-tetrahydro-4H-pyrido[1,2-a]pyrimidin-4-one (methanoyl impurity), 3-[2-[4-(6-fluoro-1,2-benzisoxazol-3-yl)-1-piperidinyl]ethyl]-2-methyl-4H-pyrido[1,2-a]pyrimidin-4-one (dehydroxy impurity) and 3-[2-[4-(6-fluoro-1,2-benzisoxazol-3-yl)-1-piperidinyl]ethyl]-2-methyl-7,8-dihydro-6H-pyrido[1,2-a]pyrimidin-4,9-dione (9-keto impurity), and processes for preparing and isolating thereof. Provided further herein is a highly pure paliperidone or a pharmaceutically acceptable salt thereof substantially free of methanoyl, dehydroxy and 9-keto impurities, process for the preparation thereof, and pharmaceutical compositions comprising highly pure paliperidone or a pharmaceutically acceptable salt thereof substantially free of methanoyl, dehydroxy and 9-keto impurities. Provided also herein are improved and efficient processes for preparing paliperidone intermediates.

Abstract: Provided herein are solid state forms of paliperidone salts, processes for preparation, pharmaceutical compositions, and method of treating thereof. Paliperidone is represented by the following structural formula (I): More particularly, provided are solid state forms of paliperidone acid addition salts, wherein the acid counter ion is provided by an acid selected from the group consisting of L-(+)-tartaric acid, p-toluenesulfonic acid, maleic acid, oxalic acid, fumaric acid, acetic acid and malic acid. Provided also herein is a process for preparing substantially pure paliperidone free base using the solid state forms of paliperidone salts.

Abstract: Provided are methods of stabilizing an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer. Methods include modulating the optical properties reduces the effects of UV radiation on the dielectric diffusion barrier layer. The dielectric diffusion barrier can be made to absorb less UV radiation. A dielectric layer with UV absorbing properties may also be added on top of the diffusion barrier layer so less UV is transmitted. Both methods result in reduced interaction between UV radiation and the dielectric diffusion barrier.