Abstract: A magnetic device, according to one approach, includes: a plurality of perpendicular magnetic tunnel junction (p-MTJ) cells, each p-MTJ cell having a transistor and a magnetic tunnel junction (MTJ) sensor. Moreover, each of the transistors includes a drain terminal, a source terminal, and a gate terminal. The magnetic device also includes: a first common word line coupled to the gate terminal of each transistor in a first subset of the plurality of p-MTJ cells, a first common bit line coupled to a first end of each MTJ sensor in a second subset of the plurality of p-MTJ cells, and a first common source line coupled to the drain terminal of each transistor in the first subset. A second end of each of the MTJ sensors in the second subset is coupled to the source terminal of each respective transistor in the second subset.

Abstract: A method for manufacturing magnetic random access memory. The method allows very high density magnetic memory elements to be formed on a magnetic memory chip. A magnetic memory element material is deposited and a diamond like carbon (DLC) hard mask is formed over the magnetic memory element material. An ion or atom bombardment process such as ion milling is performed to remove portions of the magnetic memory element material that are not protected by the hard mask to form a plurality of magnetic memory element pillars. Because the diamond like carbon hard mask is resistant to the material removal processes such as ion milling, it can be made very thin (10-20 nm), which reduces shadowing while still allowing a process such as ion milling to be used to define the magnetic data element pillars. This advantageously allows the pillars to be formed with well defined, vertical sidewalls, and avoiding shorting.

Abstract: A method for manufacturing a magnetic random access memory element that allows for improved magnetic element pillar formation in a high density magnetic memory element array. The method allows a magnetic memory element pillar to be formed by ion milling with a lower pillar height for reduced shadowing effect. A memory element seed layer and under-layer are first formed on a substrate and layer of electrically insulating material such as silicon oxide is deposited. A chemical mechanical polishing process is performed, leaving the seed layer and under-layer surrounded by a layer of electrically insulating material having an upper surface that is coplanar with an upper surface of the under-layer. A magnetic memory element pillar is formed over the seed layer and under-layer by depositing the magnetic memory element material, forming a mask over the magnetic memory element material and performing an ion milling process to form a magnetic memory element pillar.

Abstract: A method for manufacturing magnetic random access memory. The method allows very high density magnetic memory elements to be formed on a magnetic memory chip. A magnetic memory element material is deposited and a diamond like carbon (DLC) hard mask is formed over the magnetic memory element material. An ion or atom bombardment process such as ion milling is performed to remove portions of the magnetic memory element material that are not protected by the hard mask to form a plurality of magnetic memory element pillars. Because the diamond like carbon hard mask is resistant to the material removal processes such as ion milling, it can be made very thin (10-20 nm), which reduces shadowing while still allowing a process such as ion milling to be used to define the magnetic data element pillars. This advantageously allows the pillars to be formed with well defined, vertical sidewalls, and avoiding shorting.

Abstract: A method for manufacturing a magnetic random access memory element that allows for improved magnetic element pillar formation in a high density magnetic memory element array. The method allows a magnetic memory element pillar to be formed by ion milling with a lower pillar height for reduced shadowing effect. A memory element seed layer and under-layer are first formed on a substrate and layer of electrically insulating material such as silicon oxide is deposited. A chemical mechanical polishing process is performed, leaving the seed layer and under-layer surrounded by a layer of electrically insulating material having an upper surface that is coplanar with an upper surface of the under-layer. A magnetic memory element pillar is formed over the seed layer and under-layer by depositing the magnetic memory element material, forming a mask over the magnetic memory element material and performing an ion milling process to form a magnetic memory element pillar.

Abstract: A magnetic device, according to one approach, includes: a plurality of perpendicular magnetic tunnel junction (p-MTJ) cells, each p-MTJ cell having a transistor and a magnetic tunnel junction (MTJ) sensor. Moreover, each of the transistors includes a drain terminal, a source terminal, and a gate terminal. The magnetic device also includes: a first common word line coupled to the gate terminal of each transistor in a first subset of the plurality of p-MTJ cells, a first common bit line coupled to a first end of each MTJ sensor in a second subset of the plurality of p-MTJ cells, and a first common source line coupled to the drain terminal of each transistor in the first subset. A second end of each of the MTJ sensors in the second subset is coupled to the source terminal of each respective transistor in the second subset.

Abstract: A Magnetic Random Access Memory (MRAM) structure having a thermally conductive, dielectric cladding material that contacts an outer side of a magnetic memory element. The magnetic memory element can be a magnetic tunnel junction element formed as a cylindrical pillar that extends between first and second electrically conductive lead layers. The cylinder of the magnetic memory element can have an outer periphery, and the cladding material can be formed to contact the entire periphery. In addition, a heat sink structure formed of a dielectric material having a high specific heat capacity can be formed to contact an outer periphery of the cladding material. The cladding material and heat sink structure efficiently conduct heat away from the sides of the memory element to prevent the temperature of the memory element to rise to unsafe levels. This advantageously assists in maintaining a high reliability and long life of the MRAM system.