Patents by Inventor Girish Nagavarapu

Girish Nagavarapu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High endurance non-volatile storage
    Patent number: 9472758
    Abstract: The manufacturing of the non-volatile storage system includes depositing one or more layers of reversible resistance-switching material for a non-volatile storage element. Prior to operation, either during manufacturing or afterwards, a forming operation is performed. In one embodiment, the forming operation includes applying a forming voltage to the one or more layers of reversible resistance-switching material to form a first region that includes a resistor and a second region that can reversibly change resistance at a low current, the resistor is formed in response to the forming condition and is not deposited on the device. In some embodiments, programming the non-volatile storage element includes applying a programming voltage that increases in voltage over time at low current but does not exceed the final forming voltage.
    Type: Grant
    Filed: November 11, 2014
    Date of Patent: October 18, 2016
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Zhida Lan, Abhijit Bandyopadhyay, Christopher Petti, Li Xiao, Girish Nagavarapu
  • HIGH ENDURANCE NON-VOLATILE STORAGE
    Publication number: 20160133836
    Abstract: The manufacturing of the non-volatile storage system includes depositing one or more layers of reversible resistance-switching material for a non-volatile storage element. Prior to operation, either during manufacturing or afterwards, a forming operation is performed. In one embodiment, the forming operation includes applying a forming voltage to the one or more layers of reversible resistance-switching material to form a first region that includes a resistor and a second region that can reversibly change resistance at a low current, the resistor is formed in response to the forming condition and is not deposited on the device. In some embodiments, programming the non-volatile storage element includes applying a programming voltage that increases in voltage over time at low current but does not exceed the final forming voltage.
    Type: Application
    Filed: November 11, 2014
    Publication date: May 12, 2016
    Applicant: SANDISK 3D LLC
    Inventors: Zhida Lan, Abhijit Bandyopadhyay, Christopher Petti, Li Xiao, Girish Nagavarapu