Abstract: A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.

Abstract: A method of making a micro-fluid ejection head structure for a micro-fluid ejection device. The method includes applying a removable mandrel material to a semiconductor substrate wafer containing fluid ejection actuators on a device surface thereof. The mandrel material is shaped to provide fluid chamber and fluid channel locations on the substrate wafer. A micro machinable material is applied to the shaped mandrel and the device surface of the wafer to provide a nozzle plate and flow feature layer on the shaped mandrel and wafer. A plurality of nozzle holes are formed in the nozzle plate and flow feature layer. The shaped mandrel material is then removed from the device surface of the substrate wafer to provide fluid chambers and fluid channels in the nozzle plate and flow feature layer.

Abstract: Thick film layers for a micro-fluid ejection head, micro-fluid ejection heads, and methods for making micro-fluid ejection head and thick film layers. One such thick film layer is derived from a difunctional epoxy component having a weight average molecular weight ranging from about 2500 to about 4000 Daltons, a photoacid generator, an aryl ketone solvent, and an adhesion enhancing component. One such thick film layer has a cross-link density upon curing that increases the dimensional stability of the thick film layer sufficient to provide flow features therein having substantially vertical walls.

Abstract: A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (referred to collectively as “slots”) in the substrates. The process includes applying a first layer to a first surface of substrate to provide an etch mask material layer on the first surface of the substrate. A second layer is applied to a second surface of the substrate to provide an etch stop material layer on the second surface of the substrate. The first layer and the second layer have similar solubilities in one or more organic solvents. The substrate is etched from the first surface of the wafers to provide a slot in the substrate. After etching the substrate, the etch mask material layer and the etch stop material layer are removed by contacting the first surface and the second surface of the substrate with a single organic solvent.

Abstract: A fluid ejector, such as a printhead for an inkjet printer, comprising a substrate that includes a primary via formed therein, and a nozzle member overlying the substrate and including vertical nozzle chambers at least partially overlying the primary via and a corresponding fluid actuator (e.g., a heater) associated with the substrate.

Abstract: A method for improving adhesion of a radiation curable layer to a semiconductor chip utilizing a silane adhesion promoter, without crosslinking the silane adhesion promoter prior to application of the radiation curable layer onto the surface of the semiconductor chip.

Abstract: A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (hereinafter “slots”) in the substrates. The process includes applying a first layer to a back side of a substrate as a first etch stop material. The first layer is a relatively soft etch stop material. A second layer is applied to the first layer on the back side of the substrate to provide a composite etch stop layer. The second layer is a relatively hard etch stop material. The substrate is etched from a side opposite the back side of the substrate to provide a slot in the substrate.

Abstract: A method of making a micro-fluid ejection head structure. The method can include positioning a semiconductor substrate having a fluid feed slot over a nozzle plate film in a bonding orientation therewith such that the substrate overlies the nozzle plate film and the device side of the substrate is substantially downwardly facing so that gravitational forces inhibit deformation of portions of the nozzle plate film toward the device side of the substrate.

Abstract: A method of making a micro-fluid ejection head structure for a micro-fluid ejection device. The method includes applying a removable mandrel material to a semiconductor substrate wafer containing fluid ejection actuators on a device surface thereof. The mandrel material is shaped to provide fluid chamber and fluid channel locations on the substrate wafer. A micro machinable material is applied to the shaped mandrel and the device surface of the wafer to provide a nozzle plate and flow feature layer on the shaped mandrel and wafer. A plurality of nozzle holes are formed in the nozzle plate and flow feature layer. The shaped mandrel material is then removed from the device surface of the substrate wafer to provide fluid chambers and fluid channels in the nozzle plate and flow feature layer.

Abstract: A radiation curable resin composition having improved flexibility. The radiation curable composition having from about 5 to about 50 weight percent of a difunctional polymeric compound; from about 1 to about 10 weight percent of a photoinitiator; from about 1 to about 10 weight percent of a flexibilizer agent, wherein the flexibilizer agent has a molecular weight ranging from about 400 to about 10,000; and about 30 to about 90 weight percent of the non-photoreactive solvent, wherein the weight percents are based on the total weight of the resin composition. Ink jet print heads and ink jet printing apparatusess comprising ink jet print heads utilizing the radiation curable resin compositions are also included.

Abstract: A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.

Abstract: A substantially inorganic planarization layer for a micro-fluid ejection head substrate and method therefor. The planarization layer includes a plurality of layers composed of one or more dielectric compounds and at least one spin on glass (SOG) layer having a total thickness ranging from about 1 microns to about 15 microns deposited over a second metal layer of the micro-fluid ejection head substrate. A top most layer of the planarization layer is selected from one or more of the dielectric compounds and a hard mask material.

Abstract: A micro-fluid ejection assembly and method therefor. The micro-fluid ejection assembly includes a silicon substrate having a fluid supply slot therein. The fluid supply slot is formed by an etch process conducted on a substrate using, a first etch mask circumscribing the fluid supply slot, and a second etch mask applied over a functional layer on the substrate.

Abstract: A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.

Abstract: A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.