Patents by Inventor Girotra Kunal

Girotra Kunal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating thin film transistor substrate and thin film transistor substrate produced using the same
    Patent number: 7598159
    Abstract: A method of fabricating a thin film transistor substrate includes forming a gate wiring on an insulating substrate and forming a gate insulating layer on the gate wiring; performing a first hydrogen plasma treatment with respect to the gate insulating layer; forming a first active layer with a first thickness at a first deposition rate on the gate insulating layer; performing a second hydrogen plasma treatment with respect to the first active layer; and forming a second active layer with a second thickness greater than the first thickness at a second deposition rate greater than the first deposition rate, on the first active layer.
    Type: Grant
    Filed: May 9, 2007
    Date of Patent: October 6, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwa-yeul Oh, Byoung-june Kim, Sung-hoon Yang, Jae-ho Choi, Yong-mo Choi, Girotra Kunal
  • METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE PRODUCED USING THE SAME
    Publication number: 20080108226
    Abstract: A method of fabricating a thin film transistor substrate includes forming a gate wiring on an insulating substrate and forming a gate insulating layer on the gate wiring; performing a first hydrogen plasma treatment with respect to the gate insulating layer; forming a first active layer with a first thickness at a first deposition rate on the gate insulating layer; performing a second hydrogen plasma treatment with respect to the first active layer; and forming a second active layer with a second thickness greater than the first thickness at a second deposition rate greater than the first deposition rate, on the first active layer.
    Type: Application
    Filed: May 9, 2007
    Publication date: May 8, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Hwa-yeul OH, Byoung-june KIM, Sung-hoon YANG, Jae-ho CHOI, Yong-mo CHOI, Girotra KUNAL