Abstract: A bandgap circuit that is area efficient and has a low power consumption. The bandgap circuit includes a voltage generator circuit, and a sample and hold circuit coupled to the voltage generator circuit. The voltage generator circuit includes a pair of transistors each connected in a diode configuration and biased with a respective current source of a plurality of current sources of the voltage generator circuit. During a sample phase, the sample and hold circuit samples a first voltage between a first base and a first emitter of a first transistor of the pair of transistors and a second voltage between a second base and a second emitter of a second transistor of the pair of transistors. During a hold phase subsequent to the sample phase, the sample and hold circuit generates an output voltage as a combination of the sampled first and second voltages.

Abstract: Circuitry for bootstrapping and precharging a gate of a field-effect transistor (FET) is disclosed. In one embodiment, an apparatus includes a first transistor coupled to a switching node and further coupled to receive a supply voltage from a supply voltage node, and a second transistor coupled between the switching node and a ground node, wherein the first and second transistors are of a same type. A precharge circuit is configured to precharge a gate terminal of the first transistor to a voltage that is less than a supply voltage on the voltage supply node. The apparatus also includes a bootstrap circuit. Subsequent to precharging the gate terminal of the first transistor, the bootstrap circuit is configured to cause activation of the first transistor by charging the gate terminal to a voltage greater than the supply voltage.

Abstract: A switching architecture provides input voltage signals from input voltage lines to a plurality of global word lines connected to word lines of a memory array in a memory device. The switching architecture includes a first switching block receiving a first set of positive voltages used to bias unselected word lines and being connected to a first output line providing a first output bias voltage, and a second switching block receiving a second set of positive voltages and a third set of negative voltages used to bias selected word lines and being connected to a second output line providing a second output bias voltage. A plurality of final switches are input connected to the first and second output lines and are output connected to a respective global word line.

Abstract: Circuitry for bootstrapping and precharging a gate of a field-effect transistor (FET) is disclosed. In one embodiment, an apparatus includes a first transistor coupled to a switching node and further coupled to receive a supply voltage from a supply voltage node, and a second transistor coupled between the switching node and a ground node, wherein the first and second transistors are of a same type. A precharge circuit is configured to precharge a gate terminal of the first transistor to a voltage that is less than a supply voltage on the voltage supply node. The apparatus also includes a bootstrap circuit. Subsequent to precharging the gate terminal of the first transistor, the bootstrap circuit is configured to cause activation of the first transistor by charging the gate terminal to a voltage greater than the supply voltage.

Abstract: A switching architecture provides input voltage signals from input voltage lines to a plurality of global word lines connected to word lines of a memory array in a memory device. The switching architecture includes a first switching block receiving a first set of positive voltages used to bias unselected word lines and being connected to a first output line providing a first output bias voltage, and a second switching block receiving a second set of positive voltages and a third set of negative voltages used to bias selected word lines and being connected to a second output line providing a second output bias voltage. A plurality of final switches are input connected to the first and second output lines and are output connected to a respective global word line.