Abstract: Apparatus and methods are disclosed, such as those that provide dynamic block allocations in NAND flash memory between single-level cells (SLC) and multi-level cells (MLC) based on characteristics. In one embodiment, a memory controller dynamically switches between programming and/or reprogramming blocks between SLC mode and MLC mode based on the amount of memory available for use. When memory usage is low, SLC mode is used. When memory usage is high, MLC mode is used. Dynamic block allocation allows a memory controller to obtain the performance and reliability benefits of SLC mode while retaining the space saving benefits of MLC mode.

Abstract: Apparatus and methods are disclosed, such as those that provide dynamic block allocations in NAND flash memory between single-level cells (SLC) and multi-level cells (MLC) based on characteristics. In one embodiment, a memory controller dynamically switches between programming and/or reprogramming blocks between SLC mode and MLC mode based on the amount of memory available for use. When memory usage is low, SLC mode is used. When memory usage is high, MLC mode is used. Dynamic block allocation allows a memory controller to obtain the performance and reliability benefits of SLC mode while retaining the space saving benefits of MLC mode.

Abstract: Apparatus and methods are disclosed, such as those that provide dynamic block allocations in NAND flash memory between single-level cells (SLC) and multi-level cells (MLC) based on characteristics. In one embodiment, a memory controller dynamically switches between programming and/or reprogramming blocks between SLC mode and MLC mode based on the amount of memory available for use. When memory usage is low, SLC mode is used. When memory usage is high, MLC mode is used. Dynamic block allocation allows a memory controller to obtain the performance and reliability benefits of SLC mode while retaining the space saving benefits of MLC mode.

Abstract: Apparatus and methods are disclosed, such as those that provide dynamic block allocations in NAND flash memory between single-level cells (SLC) and multi-level cells (MLC) based on characteristics. In one embodiment, a memory controller dynamically switches between programming and/or reprogramming blocks between SLC mode and MLC mode based on the amount of memory available for use. When memory usage is low, SLC mode is used. When memory usage is high, MLC mode is used. Dynamic block allocation allows a memory controller to obtain the performance and reliability benefits of SLC mode while retaining the space saving benefits of MLC mode.

Abstract: Apparatus and methods are disclosed, such as those that provide dynamic block allocations in NAND flash memory between single-level cells (SLC) and multi-level cells (MLC) based on characteristics. In one embodiment, a memory controller dynamically switches between programming and/or reprogramming blocks between SLC mode and MLC mode based on the amount of memory available for use. When memory usage is low, SLC mode is used. When memory usage is high, MLC mode is used. Dynamic block allocation allows a memory controller to obtain the performance and reliability benefits of SLC mode while retaining the space saving benefits of MLC mode.

Abstract: Apparatus and methods for adjusting the buffer strength of an output buffer to match its capacitive load use selectively enabled stages of a multiple stage output buffer. A user can opt for a default capacitive load, or adjust the strength by enabling one or more stages of the multiple stage output buffer.

Abstract: A sense amplifier for multiple level flash memory cells is comprised of a voltage ramp generator that generates a ramp voltage signal. Reference sense amplifiers compare an input reference current to a ramp current generated from the ramp voltage signal. When the ramp voltage signal is greater than the reference current, an output latch signal is toggled. A sense amplifier compares an input bit line current to a threshold and outputs a logical low when the bit line current goes over the threshold. The sense amplifier output is latched into one of three digital latches at a time determined by the latch signals. An encoder encodes the data from the three digital latches into two bits of output data.

Abstract: An output buffer for a semiconductor memory device and other semiconductor devices includes a feedback circuit to dynamically control the output impedance of the output buffer in response to a variety of load conditions, thus reducing output ringing. The output buffer may also include circuitry to support selectively converting the device for operation at a variety of supply voltage ranges without the need for additional mask or process steps.

Abstract: Single-ended sensing devices for sensing a programmed state of a non-volatile memory cell are adapted for use in low-voltage memory devices. Methods of their operation include precharging an input node of a single-ended sensing device to a precharge potential while the input node is coupled to a source/drain region of a non-volatile memory cell, applying a reference current to the input node, driving a control gate of the non-volatile memory cell, isolating the input node from the precharge potential and sensing a potential level at the input node while applying the reference current. The potential level at the input node is indicative of the programmed state of the non-volatile memory cell.

Abstract: An output buffer for a semiconductor memory device and other semiconductor devices includes a feedback circuit to dynamically control the output impedance of the output buffer in response to a variety of load conditions, thus reducing output ringing. The output buffer may also include circuitry to support selectively converting the device for operation at a variety of supply voltage ranges without the need for additional mask or process steps.

Abstract: An output buffer for a semiconductor memory device and other semiconductor devices includes a feedback circuit to dynamically control the output impedance of the output buffer in response to a variety of load conditions, thus reducing output ringing. The output buffer may also include circuitry to support selectively converting the device for operation at a variety of supply voltage ranges without the need for additional mask or process steps.

Abstract: A sense amplifier for multiple level flash memory cells is comprised of a voltage ramp generator that generates a ramp voltage signal. Reference sense amplifiers compare an input reference current to a ramp current generated from the ramp voltage signal. When the ramp voltage signal is greater than the reference current, an output latch signal is toggled. A sense amplifier compares an input bit line current to a threshold and outputs a logical low when the bit line current goes over the threshold. The sense amplifier output is latched into one of three digital latches at a time determined by the latch signals. An encoder encodes the data from the three digital latches into two bits of output data.

Abstract: Apparatus and methods for adjusting the buffer strength of an output buffer to match its capacitive load use selectively enabled stages of a multiple stage output buffer. A user can opt for a default capacitive load, or adjust the strength by enabling one or more stages of the multiple stage output buffer.

Abstract: A metal-poly integrated capacitor structure that may be used in a charge pump circuit of a non-volatile memory. In one embodiment, the capacitor comprises a poly silicon layer, a first metal layer and a second metal layer. The first metal layer is positioned between the poly silicon layer and the second metal layer. The first metal layer has a first terminal and a second terminal. The first terminal is electrically isolated from the second terminal.

Abstract: An output buffer for a semiconductor memory device and other semiconductor devices includes a feedback circuit to dynamically control the output impedance of the output buffer in response to a variety of load conditions, thus reducing output ringing. The output buffer may also include circuitry to support selectively converting the device for operation at a variety of supply voltage ranges without the need for additional mask or process steps.

Abstract: Apparatus and methods for adjusting the buffer strength of an output buffer to match its capacitive load use selectively enabled stages of a multiple stage output buffer. A user can opt for a default capacitive load, or adjust the strength by enabling one or more stages of the multiple stage output buffer.

Abstract: An output buffer for a semiconductor memory device and other semiconductor devices includes a feedback circuit to dynamically control the output impedance of the output buffer in response to a variety of load conditions, thus reducing output ringing. The output buffer may also include circuitry to support selectively converting the device for operation at a variety of supply voltage ranges without the need for additional mask or process steps.

Abstract: A metal-poly integrated capacitor structure that may be used in a charge pump circuit of a non-volatile memory. In one embodiment, the capacitor comprises a poly silicon layer, a first metal layer and a second metal layer. The first metal layer is positioned between the poly silicon layer and the second metal layer. The first metal layer has a first terminal and a second terminal. The first terminal is electrically isolated from the second terminal.

Abstract: A metal-poly integrated capacitor structure that may be used in a charge pump circuit of a non-volatile memory. In one embodiment, the capacitor comprises a poly silicon layer, a first metal layer and a second metal layer. The first metal layer is positioned between the poly silicon layer and the second metal layer. The first metal layer has a first terminal and a second terminal. The first terminal is electrically isolated from the second terminal.

Abstract: A power-on reset (POR) circuit determines when integrated circuit voltages and/or currents have reached predetermined levels and provides trigger signals to control the POR transition of the integrated circuit.