Abstract: The low-penetrating particles low gain avalanche detector comprises a multi-layered structure and receives particles from a radiation source (13). It consists of a thin entry region that receives the particles from the radiation source (13); a low-penetrating particles detection region, with a p++ shallow field stop (1), positioned beneath the entry region, and a p absorption layer (3), positioned beneath the p++ shallow field stop (1), and an n multiplication layer (4); and a high-penetrating particles detection region positioned beneath the n multiplication layer (4), consisting of a n-- silicon substrate (5). Due to the chosen doping polarities, the primary electrons (created by the particles from the radiation source (13)) drift away from the entry region. That way, signals from low-penetrating particles or radiation experience amplification, while the noise is kept similar to a conventional PIN structure, thus increasing the signal-to-noise ratio.

Abstract: The invention relates to a liquid-semiconductor neutron detector characterised in that it comprises a hybrid structure consisting of a solid phase and a liquid phase, where the solid phase comprises a substrate of a semiconductor material characterised in that it has a series of grooves along the surface of one of the faces thereof forming an electrode of the detector, and where the liquid phase is contained in said grooves and characterised in that it comprises at least one neutron converter compound containing at least one isotope that is able to capture neutrons and replace them with charged particles suitable for ionising the semiconductor material. The invention also relates to the method for producing said detector and to the use thereof.

Abstract: A radiation detector is disclosed. The detector has an entrance opening etched through a low-resistivity volume of silicon, a sensitive volume of high-resistivity silicon for converting the radiation particles into detectable charges, and a passivation layer between the low and high-resistivity silicon layers. The detector also has electrodes built in the form of vertical channels for collecting the charges generated in the sensitive volume, and read-out electronics for generating signals based on the collected charges.

Abstract: A radiation detector is disclosed. The detector has an entrance opening etched through a low-resistivity volume of silicon, a sensitive volume of high-resistivity silicon for converting the radiation particles into detectable charges, and a passivation layer between the low and high-resistivity silicon layers. The detector also has electrodes built in the form of vertical channels for collecting the charges generated in the sensitive volume, and read-out electronics for generating signals based on the collected charges.