Patents by Inventor Giulliano Aloise

Giulliano Aloise has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for producing a semiconductor device
    Patent number: 9070789
    Abstract: A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: June 30, 2015
    Assignee: Infineon Technologies Austria AG
    Inventors: Anton Mauder, Giulliano Aloise
  • SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
    Publication number: 20110165763
    Abstract: A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.
    Type: Application
    Filed: March 15, 2011
    Publication date: July 7, 2011
    Applicant: Infineon Technologies Austria AG
    Inventors: Anton Mauder, Giulliano Aloise
  • Semiconductor device and method for producing a semiconductor device
    Patent number: 7939850
    Abstract: A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: May 10, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Anton Mauder, Giulliano Aloise
  • SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
    Publication number: 20100230715
    Abstract: A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.
    Type: Application
    Filed: March 12, 2009
    Publication date: September 16, 2010
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Anton Mauder, Giulliano Aloise