Abstract: A microneedle assembly and a method of fabrication the assembly are provided. The microneedle assembly includes an array of microneedles attached to a base. Each of the microneedles comprise a tip, a needle shaft and a plurality of cantilevered barbs protruding outwardly from the needle shaft, where a plurality of the microneedles include two or more of the cantilevered barbs arranged in a series of concentric rings along the needle shaft of each of the plurality of microneedles. The microneedle assembly may be fabricated using a 3D printing technique, where one or more cantilevered layers are formed by exposing a photocurable liquid resin including monomer material to a light source to create initially horizontal, cantilevered barbs having a crosslinking gradient, and rinsing to remove an amount of un-crosslinked monomers from the cantilevered layers to induce curvature in the cantilevered barbs extending towards a direction of the lower crosslinking.

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures is disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures is disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Abstract: A microneedle assembly and a method of fabrication the assembly are provided. The microneedle assembly includes an array of microneedles attached to a base. Each of the microneedles comprise a tip, a needle shaft and a plurality of cantilevered barbs protruding outwardly from the needle shaft, where a plurality of the microneedles include two or more of the cantilevered barbs arranged in a series of concentric rings along the needle shaft of each of the plurality of microneedles. The microneedle assembly may be fabricated using a 3D printing technique, where one or more cantilevered layers are formed by exposing a photocurable liquid resin including monomer material to a light source to create initially horizontal, cantilevered barbs having a crosslinking gradient, and rinsing to remove an amount of un-crosslinked monomers from the cantilevered layers to induce curvature in the cantilevered barbs extending towards a direction of the lower crosslinking.

Abstract: A method for operating a mobile cellular network. including: for at least one cell of a plurality of cells of the mobile cellular network: determining a radio interference affecting the cell in at least one between uplink and downlink transmissions; and if the radio interference affecting the cell is higher than a threshold radio interference, setting the cell in a first condition for preventing any user equipment using the mobile cellular network from camping on it for the at least one between uplink and downlink transmissions; or if the radio interference affecting the cell is lower than said threshold radio interference, setting the cell in a second condition for allowing any user equipment of the mobile cellular network to camp on it for the at least one between uplink and downlink transmissions.

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

Abstract: A vertical-conduction semiconductor electronic device includes: a semiconductor body; a body region in the semiconductor body; a source terminal in the body region; a drain terminal spatially opposite to the source region; and a trench gate extending in depth in the semiconductor body through the body region and the source region. The trench gate includes a dielectric region of porous silicon oxide buried in the semiconductor body, and a gate conductive region extending between the dielectric region of porous silicon oxide and the first side.

Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

Abstract: A method for operating a mobile cellular network. including: for at least one cell of a plurality of cells of the mobile cellular network: determining a radio interference affecting the cell in at least one between uplink and downlink transmissions; and if the radio interference affecting the cell is higher than a threshold radio interference, setting the cell in a first condition for preventing any user equipment using the mobile cellular network from camping on it for the at least one between uplink and downlink transmissions; or if the radio interference affecting the cell is lower than said threshold radio interference, setting the cell in a second condition for allowing any user equipment of the mobile cellular network to camp on it for the at least one between uplink and downlink transmissions.

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

Abstract: An acoustic device includes a micro-machined acoustic transducer element, an acoustically attenuating region, and an acoustic matching region arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic transducer element is formed in a first substrate housing a cavity delimiting a membrane. A second substrate of semiconductor material integrating an electronic circuit is arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic matching region has a first interface with the second substrate and a second interface with the acoustically attenuating region. The acoustic matching region has an impedance matched to the impedance of the second substrate in proximity of the first interface, and an impedance matched to the acoustically attenuating region in proximity of the second interface.

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.