Abstract: A resistor is formed in a monocrystalline silicon substrate by the diffusion of impurities to a substantially constant depth in an elongate surface zone with metallized opposite ends constituting terminals for the passage of a current therethrough. The zone is relatively narrow in the vicinity of these terminals and broadens at an intermediate location to form a corner or a bulge on one side of its longitudinal median. Several taps, in the form of branches of like conductivity transverse to the lateral boundary of the zone, are spacedly disposed along that corner or bulge at and near a region in which the cross-sectional area of the zone is a maximum and its resistance per unit length, measured at the median, is lowest; thus, the potential difference between the metallized extremities of any two adjoining taps is a small fraction of the overall voltage drop between the terminals.