Abstract: Process for the removal of deposits from an oil or gas well, and/or from surface structures, and/or from the equipment connected therewith, and/or from hydrocarbon-bearing formations, comprising:—injecting at least one oil-in-water nanoemulsion into said oil or gas well, and/or surface structures, and/or equipment connected therewith, and/or hydrocarbon bearing formations; leaving said nanoemulsion in said oil or gas well, and/or surface structures, and/or equipment connected therewith, and/or hydrocarbon bearing formations, for a predetermined time.

Abstract: A tuneable laser source includes a first confinement layer forming a Bragg reflector for a pump wave; an active layer made of non-linear semiconducting material, the refraction index of the active layer being greater than the refraction index of the first confinement layer; a second confinement layer, the refraction index of the second confinement layer being less than the refraction index of the active layer; a base with a first width; and a ribbon with a second width less than the first width. The second width is less than 10 ?m; the active layer includes at least one plane of quantum boxes capable of emitting a pump wave and the ribbon includes at least the part of the active layer including the quantum boxes plane and the second confinement layer.

Abstract: A tuneable laser source includes a first confinement layer forming a Bragg reflector for a pump wave; an active layer made of non-linear semiconducting material, the refraction index of the active layer being greater than the refraction index of the first confinement layer; a second confinement layer, the refraction index of the second confinement layer being less than the refraction index of the active layer; a base with a first width; and a ribbon with a second width less than the first width. The second width is less than 10 ?m; the active layer includes at least one plane of quantum boxes capable of emitting a pump wave and the ribbon includes at least the part of the active layer including the quantum boxes plane and the second confinement layer.

Abstract: A laser device for emitting THz waves includes a heterostructure with a substantially cylindrical shape including a first layer in an optically nonlinear semiconductor material including emitters to emit in two whispering gallery modes that are confined in the first layer and enabling the generation within the first layer of radiation in an electromagnetic THz whispering gallery mode, a second and a third layer in a semiconductor material each presenting an optical index that is smaller than the index of the material used for the first layer and a metal layer situated at one end of the heterostructure. The heterostructure includes in its center a hole with a substantially cylindrical shape extending over the entire height of the heterostructure.

Abstract: A laser device having a wave emission within a frequency range of 0.5 to 5 THz, includes a semiconductor heterostructure having a cylindrical form with a circular cross-section and including: a first optically nonlinear semiconductor material layer including an emitting medium configured to emit at least two optical whispering gallery modes belonging to the near-infrared spectrum, the two whispering gallery modes being confined within the first layer and enabling the generation, within the first layer, of radiation within an electromagnetic whispering gallery mode having a frequency of 0.

Abstract: A laser device for emitting THz waves includes a heterostructure with a substantially cylindrical shape including a first layer in an optically nonlinear semiconductor material including emitters to emit in two whispering gallery modes that are confined in the first layer and enabling the generation within the first layer of radiation in an electromagnetic THz whispering gallery mode, a second and a third layer in a semiconductor material each presenting an optical index that is smaller than the index of the material used for the first layer and a metal layer situated at one end of the heterostructure. The heterostructure includes in its center a hole with a substantially cylindrical shape extending over the entire height of the heterostructure.

Abstract: Process for the removal of deposits from an oil or gas well, and/or from surface structures, and/or from the equipment connected therewith, and/or from hydrocarbon-bearing formations, comprising: —injecting at least one oil-in-water nanoemulsion into said oil or gas well, and/or surface structures, and/or equipment connected therewith, and/or hydrocarbon bearing formations; leaving said nanoemulsion in said oil or gas well, and/or surface structures, and/or equipment connected therewith, and/or hydrocarbon bearing formations, for a predetermined time.

Abstract: A laser device having a wave emission within a frequency range of 0.5 to 5 THz, includes a semiconductor heterostructure having a cylindrical form with a circular cross-section and including: a first optically nonlinear semiconductor material layer including an emitting medium configured to emit at least two optical whispering gallery modes belonging to the near-infrared spectrum, the two whispering gallery modes being confined within the first layer and enabling the generation, within the first layer, of radiation within an electromagnetic whispering gallery mode having a frequency of 0.