Abstract: A charged particle beam system includes a charged particle source, an extraction electrode, a suppressor electrode, a first variable voltage supply for biasing the extraction electrode with an extraction voltage and a second variable voltage supply for biasing the suppressor electrode with a suppressor voltage.

Abstract: A method for operating a particle beam generator for a particle beam device, and a particle beam device for carrying out this method, are provided. An extractor voltage may be set to an extractor value using a first variable voltage supply unit. An emission current of the particle beam generator may be measured. When the emission current of the particle beam generator decreases, a suppressor voltage applied to a suppressor electrode may be adjusted using a second variable voltage supply unit such that a specific emission current of the particle beam generator is reached or maintained. When the emission current of the particle beam generator increases, the extractor voltage applied to the extractor electrode may be adjusted using the first variable voltage supply unit such that the specific emission current of the particle beam generator is reached or maintained.

Abstract: A method for operating a particle beam generator for a particle beam device, and a particle beam device for carrying out this method, are provided. An extractor voltage may be set to an extractor value using a first variable voltage supply unit. An emission current of the particle beam generator may be measured. When the emission current of the particle beam generator decreases, a suppressor voltage applied to a suppressor electrode may be adjusted using a second variable voltage supply unit such that a specific emission current of the particle beam generator is reached or maintained. When the emission current of the particle beam generator increases, the extractor voltage applied to the extractor electrode may be adjusted using the first variable voltage supply unit such that the specific emission current of the particle beam generator is reached or maintained.

Abstract: The disclosure provides a method of generating a zoom sequence visualizing a portion of a sample. The method includes changing a zoom parameter representing a magnification of an image of a portion of a sample, and directing a charged particle beam to first locations of the portion based on the zoom parameter using a charged particle beam system. The method also includes detecting intensities representing amounts of particles incident onto a detection area, visualizing a representation of the portion based on the intensities, and directing an electron beam to second locations of the portion based on the zoom parameter using a scanning electron microscope. The method further includes detecting diffraction patterns, and determining crystallographic properties of a crystal structure of the portion based on the diffraction patterns.

Abstract: A charged particle beam system includes a charged particle source, an extraction electrode, a suppressor electrode, a first variable voltage supply for biasing the extraction electrode with an extraction voltage and a second variable voltage supply for biasing the suppressor electrode with a suppressor voltage.

Abstract: A method of determining crystallographic properties of a sample includes: generating first and second electron beams of electrons having first and second mean kinetic energies, respectively; detecting, for each of first locations of a region of the sample, a two-dimensional spatial distribution of electrons incident onto a detection area while directing the first electron beam onto the first locations; generating, for each of the first locations, first data representing the two-dimensional spatial distribution; detecting, for each of second locations of the region of the sample, a two-dimensional spatial distribution of electrons incident onto the detection area while directing the second electron beam onto the second locations; generating, for each of the second locations, second data representing the two-dimensional spatial distribution; and determining the crystallographic properties for target locations of the region based on the first data of the first locations and the second data of the second location

Abstract: A method of determining crystallographic properties of a sample includes: generating first and second electron beams of electrons having first and second mean kinetic energies, respectively; detecting, for each of first locations of a region of the sample, a two-dimensional spatial distribution of electrons incident onto a detection area while directing the first electron beam onto the first locations; generating, for each of the first locations, first data representing the two-dimensional spatial distribution; detecting, for each of second locations of the region of the sample, a two-dimensional spatial distribution of electrons incident onto the detection area while directing the second electron beam onto the second locations; generating, for each of the second locations, second data representing the two-dimensional spatial distribution; and determining the crystallographic properties for target locations of the region based on the first data of the first locations and the second data of the second location

Abstract: The disclosure provides a method of generating a zoom sequence visualizing a portion of a sample. The method includes changing a zoom parameter representing a magnification of an image of a portion of a sample, and directing a charged particle beam to first locations of the portion based on the zoom parameter using a charged particle beam system. The method also includes detecting intensities representing amounts of particles incident onto a detection area, visualizing a representation of the portion based on the intensities, and directing an electron beam to second locations of the portion based on the zoom parameter using a scanning electron microscope. The method further includes detecting diffraction patterns, and determining crystallographic properties of a crystal structure of the portion based on the diffraction patterns.

Abstract: A system and method are provided for preparing and analyzing an object having a region of interest. Material is removed from a first surface of the object using a second particle beam. The first surface is monitored using a first particle beam and a second detector. A second surface of the object is generated when the material is removed from the first surface. Material is removed from the second surface using the second particle beam, and the removal of the material is monitored using the first particle beam and the second detector. Removing the material generates a first side and a second side, and the region of interest is arranged between the first side and the second side. The first particle beam is guided to the first side, and first charged particles of the first particle beam being transmitted through the region of interest are detected using a first detector.

Abstract: A method for adjusting an operating parameter of a particle beam device and a sample holder, which is suitable in particular for performing the method are provided. An adjustment of an operating parameter of a particle beam device is possible without transfer of the sample holder out of the particle beam device. A reference sample is placed in a first sample receptacle, so that in ongoing operation of the particle beam device, the sample holder need only be positioned in such a way that the reference sample is bombarded and measured with the aid of a particle beam generated in the particle beam device.

Abstract: A method for adjusting an operating parameter of a particle beam device and a sample holder, which is suitable in particular for performing the method are provided. An adjustment of an operating parameter of a particle beam device is possible without transfer of the sample holder out of the particle beam device. A reference sample is placed in a first sample receptacle, so that in ongoing operation of the particle beam device, the sample holder need only be positioned in such a way that the reference sample is bombarded and measured with the aid of a particle beam generated in the particle beam device.

Abstract: The depth of a denuded layer with respect to a relatively defective bulk region of a monocrystalline semiconductor wafer is estimated in a nondestructive way. The depth is determined by measuring the lifetime or diffusion length of injected excess minority charge carriers on a surface of the wafer having such a denuded layer and on a different portion of the surface of the wafer from where the denuded layer has been previously stripped-off by lapping and/or etching. The depth is calculated through a best-fit procedure or through numerical processing of the measurement results on the basis of the diffusion equations of excess minority carriers.