Patents by Inventor Giuseppe Scardera

Giuseppe Scardera has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180301574
    Abstract: The present invention provides a thick-film paste composition comprising an electrically conductive metal and an oxide composition dispersed in an organic medium. The paste composition is printed on the front side of a solar cell device having one or more insulating layers and fired to form an electrode, and is suitable for devices having both highly and lightly doped emitter structures.
    Type: Application
    Filed: April 9, 2018
    Publication date: October 18, 2018
    Inventors: Carmine Torardi, Paul Douglas Vernooy, Qijie Guo, Brian J Laughlin, Giuseppe Scardera
  • Patent number: 9306087
    Abstract: A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: April 5, 2016
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Giuseppe Scardera, Maxim Kelman, Elena V Rogojina, Dmitry Poplavskyy, Elizabeth Tai, Gonghou Wang
  • Patent number: 9306088
    Abstract: A method for manufacturing back contact solar cells, comprising steps of: (a) providing a silicon substrate doped with phosphorus; (b) doping the front surface and the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a front side p+ region on the front surface and a rear side p+ region on the rear surface; (c) forming a silicon dioxide layer on the front surface and the rear surface; (d) depositing a phosphorus-containing doping paste on the silicon dioxide layer of the rear surface in a second pattern; (e) heating the silicon substrate in order to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming a rear side n+ region on the rear surface of the silicon substrate beneath the phosphorus-containing doping paste; and (f) removing the silicon dioxide layer from the silicon substrate.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: April 5, 2016
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Giuseppe Scardera, Shannon Dugan
  • Patent number: 9246029
    Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: January 26, 2016
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Giuseppe Scardera, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad, Shannon Dugan
  • Publication number: 20150187968
    Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.
    Type: Application
    Filed: February 20, 2015
    Publication date: July 2, 2015
    Inventors: GIUSEPPE SCARDERA, DMITRY POPLAVSKYY, DANIEL ANEURIN INNS, KARIM LOTFI BENDIMERAD, SHANNON DUGAN
  • Patent number: 9059341
    Abstract: A method for manufacturing an interdigitated back contact solar cell. comprising the steps of: (a) providing a silicon substrate doped with a first dopant; (b) doping the rear surface of the silicon substrate with a second dopant in a first pattern; (c) forming a silicon dioxide layer on the rear surface; (d) depositing a silicon-containing paste comprising silicon-containing particles on the silicon dioxide layer in a second pattern; (e) exposing the substrate to a diffusion ambient, wherein the diffusion ambient comprises a third dopant and wherein the third dopant is a counter dopant to the second dopant; (f) heating the substrate in a drive-in ambient; and (g) removing the silicon dioxide layer and the doped silicate glass layer from the silicon substrate, wherein a region doped with the second dopant and a region doped with the third dopant collectively form an interdigitated pattern on the rear surface of the silicon substrate.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: June 16, 2015
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Giuseppe Scardera, Maxim Kelman, Shannon Dugan, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad
  • Patent number: 9048374
    Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: June 2, 2015
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Giuseppe Scardera, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad, Shannon Dugan
  • Publication number: 20150140725
    Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.
    Type: Application
    Filed: November 20, 2013
    Publication date: May 21, 2015
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: GIUSEPPE SCARDERA, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad, Shannon Dugan
  • Publication number: 20150053256
    Abstract: A method of making a solar cell may include depositing in a first pattern a first ink comprising a first dopant on a back surface of a substrate that is doped with a second dopant being of the same type as the first dopant; then, depositing a second ink comprising a set of undoped semiconductor nanoparticles over the first ink on the back surface of the substrate in a second pattern matching the first pattern; then, heating the semiconductor substrate so that the first dopant diffuses into the substrate and thereby, forms a third pattern of localized doped regions; then, exposing the substrate to a doping ambient comprising a third dopant being of the opposite type to the second dopant, thereby forming a doped semiconductor layer on the front surface and a portion of the back surface not covered by the second ink, and then, removing the deposited ink.
    Type: Application
    Filed: August 26, 2013
    Publication date: February 26, 2015
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: DMITRY POPLAVSKYY, Giuseppe Scardera, Karim Lotfi Bendimerad, Daniel Aneurin Inns
  • Publication number: 20140370640
    Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
    Type: Application
    Filed: August 28, 2014
    Publication date: December 18, 2014
    Applicant: Innovalight, Inc.
    Inventors: Elena Rogojina, Maxim Kelman, Giuseppe Scardera
  • Patent number: 8858843
    Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: October 14, 2014
    Assignee: Innovalight, Inc.
    Inventors: Elena Rogojina, Maxim Kelman, Giuseppe Scardera
  • Publication number: 20140065764
    Abstract: A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.
    Type: Application
    Filed: September 4, 2012
    Publication date: March 6, 2014
    Applicant: INNOVALIGHT INC
    Inventors: Giuseppe Scardera, Maxim Kelman, Elena V. Rogojina, Dmitry Poplavskyy, Elizabeth Tai, Gonghou Wang
  • Patent number: 8513104
    Abstract: A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear surface. The method also includes depositing a set of masking particles on the rear surface in a set of patterns; and heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a particle masking layer. The method further includes exposing the substrate to a phosphorous deposition ambient at a second temperature and for a second time period, wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: August 20, 2013
    Assignee: Innovalight, Inc.
    Inventors: Malcolm Abbott, Maxim Kelman, Eric Rosenfeld, Elena Rogojina, Giuseppe Scardera
  • Patent number: 8420517
    Abstract: A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The method further includes depositing an ink on the front substrate surface in a ink pattern, the ink comprising a set of silicon-containing particles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified film ink pattern.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: April 16, 2013
    Assignee: Innovalight, Inc.
    Inventors: Giuseppe Scardera, Shihai Kan, Maxim Kelman, Dmitry Poplavskyy
  • Patent number: 8394658
    Abstract: Disclosed are methods of forming multi-doped junctions, which utilize a nanoparticle ink to form an ink pattern on a surface of a substrate. From the ink pattern, a densified film ink pattern can be formed. The disclosed methods may allow in situ controlling of dopant diffusion profiles.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: March 12, 2013
    Assignee: Innovalight, Inc.
    Inventors: Giuseppe Scardera, Dmitry Poplavskyy, Michael Burrows, Sunil Shah
  • Publication number: 20120145967
    Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
    Type: Application
    Filed: December 14, 2010
    Publication date: June 14, 2012
    Inventors: Elena Rogojina, Maxim Kelman, Giuseppe Scardera
  • Patent number: 8163587
    Abstract: A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface, and depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents. The method further includes heating the substrate in a baking ambient to a first temperature of between about 200° C. and about 800° C. and for a first time period of between about 3 minutes and about 20 minutes in order to create a densified film ink pattern. The method also includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas, wherein a ratio of the carrier N2 gas to the reactive O2 gas is between about 1:1 to about 1.5:1, at a second temperature of between about 700° C. and about 1000° C.
    Type: Grant
    Filed: July 21, 2009
    Date of Patent: April 24, 2012
    Assignee: Innovalight, Inc.
    Inventors: Giuseppe Scardera, Dmitry Poplavskyy, Michael Burrows, Sunil Shah
  • Publication number: 20120083104
    Abstract: A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear surface. The method also includes depositing a set of masking particles on the rear surface in a set of patterns; and heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a particle masking layer. The method further includes exposing the substrate to a phosphorous deposition ambient at a second temperature and for a second time period, wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns.
    Type: Application
    Filed: June 29, 2011
    Publication date: April 5, 2012
    Inventors: Malcolm Abbott, Maxim KELMAN, Eric ROSENFELD, Elena ROGOJINA, Giuseppe SCARDERA
  • Patent number: 8148176
    Abstract: A method of distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate is disclosed. The method includes providing the silicon substrate, the silicon substrate configured with the set of lightly doped regions and the set of highly doped regions. The method further includes illuminating the silicon substrate with an electromagnetic radiation source, the electromagnetic radiation source transmitting a wavelength of light above about 1100 nm. The method also includes measuring a wavelength absorption of the set of lightly doped regions and the set of heavily doped regions with a sensor, wherein for any wavelength above about 1100 nm, the percentage absorption of the wavelength in the lightly doped regions is substantially less than the percentage absorption of the wavelength in the heavily doped regions.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: April 3, 2012
    Assignee: Innovalight, Inc.
    Inventors: Maxim Kelman, Giuseppe Scardera
  • Patent number: 8138070
    Abstract: A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink containing a first set of nanoparticles and a first set of solvents, the first set of nanoparticles containing a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink containing a second set of nanoparticles and a second set of solvents, the second set of nanoparticles containing a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period.
    Type: Grant
    Filed: November 25, 2009
    Date of Patent: March 20, 2012
    Assignee: Innovalight, Inc.
    Inventors: Maxim Kelman, Michael Burrows, Dmitry Poplavskyy, Giuseppe Scardera, Daniel Kray, Elena Rogojina