Abstract: A manufacturing device of a silicon carbide single crystal includes: a reaction chamber; a seed crystal arranged in the reaction chamber; and a heating chamber. The seed crystal is disposed on an upper side of the reaction chamber, and the gas is supplied from an under side of the reaction chamber. The heating chamber is disposed on an upstream side of a flowing passage of the gas from the reaction chamber. The heating chamber includes a hollow cylindrical member, a raw material gas inlet, a raw material gas supply nozzle and multiple baffle plates. The inlet introduces the gas into the hollow cylindrical member. The nozzle discharges the gas from the hollow cylindrical member to the reaction chamber. The baffle plates are arranged on the flowing passage of the gas between the inlet and the nozzle.

Abstract: The invention relates to a system for controlling the positioning of a susceptor (2) rotating in the reaction chamber (3) of an epitaxial reactor. The control is carried out on the basis of the different path of a laser beam transmitted by a source (15) when it is reflected by a pin (8) arranged on the susceptor (2).

Abstract: Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (36a-n) of material to be treated and having an insulating and chemically resistant plate (40) arranged above it, and a diffuser (54) consisting of a plurality of outlet pipes (106a-f) mounted on a cap (52) fixed to an upper opening (50) of the belljar (14).

Abstract: The invention relates to a method for cooling the walls of the reaction chamber (2) of a reactor for chemical vapour deposition. The method consists in selectively cooling with water at least one predetermined zone of the wall of the chamber (2), to remove a different heat flow compared with the adjacent zones so as to obtain substantially uniform temperature distribution of the reaction chamber (2). In a preferred embodiment, the selectively-cooled zone is the zone above the susceptor (5) and is delimited by two ribs (8, 9). The invention also includes a reactor and a reaction chamber (2) for carrying out the cooling method.