Patents by Inventor Giuseppe TOSCANO

Giuseppe TOSCANO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240235514
    Abstract: A bulk acoustic wave resonator device comprises bottom and top electrodes (120, 360). A piezoelectric layer (355) sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. A method of manufacturing the device comprises a bonding of a piezoelectric wafer to a carrier wafer and splitting a portion of the piezoelectric wafer by an ion-cut technique. Different thicknesses of the piezoelectric layer in the active area and the surrounding area are achieved by implanting ions at different depths.
    Type: Application
    Filed: February 1, 2024
    Publication date: July 11, 2024
    Inventors: Ulrike Monika ROESLER, Willi AIGNER, Maximilian SCHIEK, Giuseppe TOSCANO
  • Patent number: 11942915
    Abstract: A bulk acoustic wave resonator device comprises bottom and top electrodes (120, 360). A piezoelectric layer (355) sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. A method of manufacturing the device comprises a bonding of a piezoelectric wafer to a carrier wafer and splitting a portion of the piezoelectric wafer by an ion-cut technique. Different thicknesses of the piezoelectric layer in the active area and the surrounding area are achieved by implanting ions at different depths.
    Type: Grant
    Filed: March 7, 2019
    Date of Patent: March 26, 2024
    Assignee: RF360 Singapore Pte. Ltd.
    Inventors: Ulrike Roesler, Willi Aigner, Maximilian Schiek, Giuseppe Toscano
  • Publication number: 20210058050
    Abstract: A bulk acoustic wave resonator device comprises bottom and top electrodes (120, 360). A piezoelectric layer (355) sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. A method of manufacturing the device comprises a bonding of a piezoelectric wafer to a carrier wafer and splitting a portion of the piezoelectric wafer by an ion-cut technique. Different thicknesses of the piezoelectric layer in the active area and the surrounding area are achieved by implanting ions at different depths.
    Type: Application
    Filed: March 7, 2019
    Publication date: February 25, 2021
    Inventors: Ulrike ROESLER, Willi AIGNER, Maximilian SCHIEK, Giuseppe TOSCANO