Patents by Inventor Gl-GWAN PARK

Gl-GWAN PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20170365522
    Abstract: An integrated circuit device includes: a first fin-type active region in a first area of a substrate, the first fin-type active region having a first recess filled with a first source/drain region; a first device isolation layer covering both lower sidewalls of the first fin-type active region; a second fin-type active region in a second area of the substrate, the second fin-type active region having a second recess filled with a second source/drain region; a second device isolation layer covering both lower sidewalls of the second fin-type active region; and a fin insulating spacer on the first device isolation layer, the fin insulating spacer covering a sidewall of the first fin-type active region under the first source/drain region.
    Type: Application
    Filed: November 21, 2016
    Publication date: December 21, 2017
    Inventors: YONGKUK JEONG, Gl-GWAN PARK